Characteristic intra- and interunit interactions of Kr atoms adsorbed on theSi(111)−7×7surface

Abstract

Adsorption of Kr atoms on the Si(111)-7ϫ7 surface at 8 K was studied by scanning tunneling microscopy. Despite similar electronic structures of noble gas atoms, the observed site-dependent adsorbed Kr structures and their formation processes were different from those of Xe atoms. In comparison with the results of simulation, the existence of the characteristic intraunit and interunit interactions between Kr atoms was confirmed.

The Influences of Tip Scan and Tunneling Current by Adsorbing Kr on a Si (111)-7×7 Surface at Low Temperature

“…We used the influences of tip scan and tunneling current to investigate the stability of Kr and Xe adsorption structures. We have already reported Xe and Kr adsorption structures in the elsewhere [8,9]. Figure 3 shows the results of the stability of adsorption structures of Xe and Kr atoms on the Si(111)-7x7 surface at low temperature 8 K. In the case of Xe atoms as shown in figure 3(a), first, the Xe adsorption structure on the unfaulted-half (UH) is stable than on the faulted-half (FH).…”

“…On the other hand, the phenomena suggest the promising potential of the rare gases as a sensitive surface probe of the nanoscale. In order to further emboss the point described above, we have already reported the adsorption processes of Kr on the Si(111)-7x7 surface by STM at low temperature 8 K [9]. As a result, characteristic adsorption processes were observed.…”