Characteristic material parameters of CIGS solar cell related with device performance

Enkhbat, Temujin; Mina, Salahuddin; Sharif, Hamim; Enkhbayar, Enkhjargal; Jung, Ki Young; Shin, Dong Won; Cho, Sung Wook; Jeon, Chan‐Wook; Kim, Junho

doi:10.1016/j.cap.2020.08.003

Cited by 3 publications

(2 citation statements)

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“… 40 It has to be highlighted that the PL intensity of the Ge50% and Ge40% is less than the 25% of the intensity of the Ge70%, suggesting an increase of nonradiative transitions due to a high defect density. 41 A PL study varying excitation power and temperature can identify the radiative recombination mechanisms operating in semiconductors. 42 The PL spectra varying temperatures are shown in Figure 7 b–d.…”

Section: Results and Discussionmentioning

confidence: 99%

“…The mismatch in energy between the optical band gap and the PL peak position is typical for sulfur-based kesterite, and it has been ascribed to optoelectronically active defects in the band gap close to band edges. , Cu 2 ZnSn 0.5 Ge 0.5 S 4 and Cu 2 ZnSn 0.3 Ge 0.7 S 4 have a reduced mismatch of about 0.06 eV, and meanwhile, the 40% Ge substituted shows an increase of the band gap of 0.1 eV, indicating a high density of thermalized defects . It has to be highlighted that the PL intensity of the Ge50% and Ge40% is less than the 25% of the intensity of the Ge70%, suggesting an increase of nonradiative transitions due to a high defect density . A PL study varying excitation power and temperature can identify the radiative recombination mechanisms operating in semiconductors .…”

Section: Results and Discussionmentioning

confidence: 99%

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Band-Gap Tuning Induced by Germanium Introduction in Solution-Processed Kesterite Thin Films

et al. 2022

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In the last few decades, the attention of scientific community has been driven toward the research on renewable energies. In particular, the photovoltaic (PV) thin-film technology has been widely explored to provide suitable candidates as top cells for tandem architectures, with the purpose of enhancing current PV efficiencies. One of the most studied absorbers, made of earth-abundant elements, is kesterite Cu 2 ZnSnS 4 (CZTS), showing a high absorption coefficient and a band gap around 1.4–1.5 eV. In particular, thanks to the ease of band-gap tuning by partial/total substitution of one or more of its elements, the high-band-gap kesterite derivatives have drawn a lot of attention aiming to find the perfect partner as a top absorber to couple with silicon in tandem solar cells (especially in a four-terminal architecture). In this work, we report the effects of the substitution of tin with different amounts of germanium in CZTS-based solar cells produced with an extremely simple sol–gel process, demonstrating how it is possible to fine-tune the band gap of the absorber and change its chemical–physical properties in this way. The precursor solution was directly drop-cast onto the substrate and spread with the aid of a film applicator, followed by a few minutes of gelation and annealing in an inert atmosphere. The desired crystalline phase was obtained without the aid of external sulfur sources as the precursor solution contained thiourea as well as metal acetates responsible for the in situ coordination and thus the correct networking of the metal centers. The addition of KCl in dopant amounts to the precursor solution allowed the formation of well-grown compact grains and enhanced the material quality. The materials obtained with the optimized procedure were characterized in depth through different techniques, and they showed very good properties in terms of purity, compactness, and grain size. Moreover, solar-cell prototypes were produced and measured, exhibiting poor charge extraction due to heavy back-contact sulfurization as studied in depth and experimentally demonstrated through Kelvin probe force microscopy.

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Section: Results and Discussionmentioning

confidence: 99%

Section: Results and Discussionmentioning

confidence: 99%

Band-Gap Tuning Induced by Germanium Introduction in Solution-Processed Kesterite Thin Films

et al. 2022

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A 1 cm² Organic Solar Cell with 15.2% Certified Efficiency: Detailed Characterization and Identification of Optimization Potential

et al. 2021

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In organic photovoltaics, high power conversion efficiencies (PCE) are mostly achieved on device areas well below 0.1 cm2. Herein, organic solar cells based on a D18:Y6 absorber layer on an active area of ≥ 1 cm2 with a certified PCE of 15.24% are reported. The impacts of the sheet resistance of the transparent electrode and the cell design are quantified by means of full optical device simulations and an analytical electrical model. Three imaging methods (light beam‐induced current, dark lock‐in thermography, and electroluminescence [EL]) are applied and reveal a strong homogeneity of the record cell. Nevertheless, it is found that there is substantial room for improvement mostly in current but also in fill factor and that a PCE of 18.6% on ≥1 cm2 is feasible with this absorber material. Further, photoluminescence (PL) and EL spectroscopy reveal that both emissions occur at the same wavelength(s) and are very similar to the PL spectrum of a pure Y6 acceptor film. The latter points strongly toward electronic coupling between the S1 states of the acceptor and the charge transfer states at the donor/acceptor interface.

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Fabrication of in situ alkali doped flexible CIGSSe solar cells by using aqueous spray deposition

Jung

Jeong

Lee

et al. 2022

Current Applied Physics

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Characteristic material parameters of CIGS solar cell related with device performance

Cited by 3 publications

References 28 publications

Band-Gap Tuning Induced by Germanium Introduction in Solution-Processed Kesterite Thin Films

Band-Gap Tuning Induced by Germanium Introduction in Solution-Processed Kesterite Thin Films

A 1 cm² Organic Solar Cell with 15.2% Certified Efficiency: Detailed Characterization and Identification of Optimization Potential

Fabrication of in situ alkali doped flexible CIGSSe solar cells by using aqueous spray deposition

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Characteristic material parameters of CIGS solar cell related with device performance

Cited by 3 publications

References 28 publications

Band-Gap Tuning Induced by Germanium Introduction in Solution-Processed Kesterite Thin Films

Band-Gap Tuning Induced by Germanium Introduction in Solution-Processed Kesterite Thin Films

A 1 cm2 Organic Solar Cell with 15.2% Certified Efficiency: Detailed Characterization and Identification of Optimization Potential

Fabrication of in situ alkali doped flexible CIGSSe solar cells by using aqueous spray deposition

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A 1 cm² Organic Solar Cell with 15.2% Certified Efficiency: Detailed Characterization and Identification of Optimization Potential