Characteristic of (11-22) GaN on (10-10) m-plane sapphire substrate with a CrN interlayer by molecular beam epitaxy

Liu, Kuang-Wei; Hsueh, Ting-Jen; Shoou-Jinn, Chang; Young, Sheng-Joue; Hung, Hung; Mai, Yu-Chun; Chen, Shixiang; Chen, Yue-Zhang.

doi:10.1109/isdrs.2009.5378228

2009 International Semiconductor Device Research Symposium 2009

DOI: 10.1109/isdrs.2009.5378228

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Characteristic of (11-22) GaN on (10-10) m-plane sapphire substrate with a CrN interlayer by molecular beam epitaxy

Kuang-Wei Liu

Ting-Jen Hsueh²,

Chang Shoou-Jinn³

et al.

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Characteristic of (11-22) GaN on (10-10) m-plane sapphire substrate with a CrN interlayer by molecular beam epitaxy

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