Characteristic of Chemical Use in the Semiconductor Manufacturing Industry

Kim, Sun-Ju; Yoon, Chungsik; Ham, Seunghon; Park, Jihoon; Kwon, Ohun; Park, Donguk; Choi, Sangjun; Kim, Seungwon; Ha, Kwonchul; Kim, Won

doi:10.1289/isee.2017.2017-682

Cited by 1 publication

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“…The effect of the high Q F causes the higher electric field to be concentrated at the main junction of the edge termination. This leads to a deterioration of the breakdown characteristics and a decrease in the breakdown voltage [33][34][35]. When compared to the results of gamma-ray irradiation in a floating state, the over deterioration of static characteristics can be verified to have a fatal effect on gammairradiation.…”

Section: Resultsmentioning

confidence: 99%

The Effects of a Gate Bias Condition on 1.2 kV SiC MOSFETs during Irradiating Gamma-Radiation

Kim,

Yoon,

Park

et al. 2024

Micromachines

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We investigated the effects of gate bias regarding the degradation of electrical characteristics during gamma irradiation. Moreover, we observed the punch through failure of 1.2 kV rated commercial Silicon Carbide (SiC) Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) due to the influence of gate bias. In addition, the threshold voltage (VT) and on-resistance (Ron) of the SiC MOSFETs decreased significantly by the influence of gate bias during gamma irradiation. We extracted the concentration of carriers and fixed charge (QF) in oxide using N-type SiC MOS capacitors and Transmission Line Measurement (TLM) patterns to analyze the effects of gamma irradiation. The Total Ionizing Dose (TID) effect caused by high-energy gamma-ray irradiation resulted in an increase in the concentration of holes and QF in both SiC and oxide. To analyze the phenomenon for increment of hole concentration in the device under gate bias, we extracted the subthreshold swing of SiC MOSFETs and verified the origin of TID effects accelerated by the gate bias. The QF and doping concentration of p-well values extracted from the experiments were used in TCAD simulations (version 2022.03) of the planar SiC MOSFET. As a result of analyzing the energy band diagram at the channel region of 1.2 kV SiC MOSFETs, it was verified that punch-through can occur in 1.2 kV SiC MOSFETs when the gate bias is applied, as the TID effect is accelerated by the gate bias.

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Section: Resultsmentioning

confidence: 99%