Characteristic of flexible β-Ga2O3 Schottky barrier diode based on mechanical stripping process

Simulation modelling of III‐Nitride / β ‐Ga 2 O 3 Nano‐HEMT for microwave and millimetre wave applications

“…The β‐ Ga 2 O 3 emerged as a promising potential candidate for the current needs due to its advantageous development from cost‐effective melt process, greater viability as a homo‐epitaxy as well as hetero‐epitaxial substrate for III‐Nitride devices, 22 high‐crystalline quality, greater carrier control, low cost, high breakdown capabilities, and significantly larger Johnson & Baliga's figure of merits. But unfortunately, it is suffering from poor thermal management qualities 60,61 …”

“…But unfortunately, it is suffering from poor thermal management qualities. 60,61 Following are the list of techniques developed to improve the thermal management capabilities of β-Ga 2 O 3 devices: wafer thinning, backside heat sinks, utilisation of thermal shunting on the active device surface incorporating integrated cooling, the expulsion of the dissipated power with convective and evaporative microfluidics, and various heat sink structures. The adoption of flipchip hetero coupling at the device level, and current package/module level active cooling will also be a feasible and useful way to address the thermal issues related to high power β-Ga 2 O 3 device technologies.…”

Flexible gallium oxide electronics

“…Thus, it is challenging to grow them directly on conventional flexible polymer substrates. A straightforward strategy to fabricate flexible β-Ga 2 O 3 electronics is to use the transfer technique in which bulk single-crystalline β-Ga 2 O 3 is first obtained using conventional high-temperature growth routes and β-Ga 2 O 3 thin films are then exfoliated from bulk materials and pasted on flexible polymer substrates [90][91][92][93][94][95][96][97]. Single-crystalline β-Ga 2 O 3 has been commonly obtained using the Czochralski method, in which Ga 2 O 3 powders are melted in an iridium crucible at a temperature of >1820 • C in an oxygen-deficient atmosphere [98].…”

Investigation of DC and RF characteristics of spacer layer thickness engineered recessed gate and field‐plated III‐nitride nano‐HEMT on β‐Ga2O3 substrate

“…Due to its beneficial growth from a cost‐effective melt technique, stronger suitability as a homo and hetero‐epitaxial substrate candidate for III‐Nitride based devices, 27 excellent quality, increased carrier handle, cheap, high breakdown competence, and considerably higher Johnson & Baliga's figure of merits are made of β‐Ga 2 O 3 as a viable contender for the current needs. But regrettably, it has inadequate temperature control capabilities 34–36 . The approaches invented to boost β‐Ga 2 O 3 devices' ability for temperature management are outlined here; semiconductor epitaxial wafer thinning, backend passive heat sinks, utilization of heat funneling on active device interface with embedded heating evaporation, the ejection of dissipated power with convective and absorbent microfluidics, and multiple passive heat sink technologies.…”

“…But regrettably, it has inadequate temperature control capabilities. [34][35][36] The approaches invented to boost β-Ga 2 O 3 devices' ability for temperature management are outlined here; semiconductor epitaxial wafer thinning, backend passive heat sinks, utilization of heat funneling on active device interface with embedded heating evaporation, the ejection of dissipated power with convective and absorbent microfluidics, and multiple passive heat sink technologies. To overcome the heating challenges associated with high-power β-Ga 2 O 3 device technologies, flip-chip hetero pairing at device stage and current package/module level cooling coils will both be viable and helpful remedies.…”