Characteristics and Durability of Vertical-Type Organic Light-Emitting Transistors Using Poly(2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene) and Indenofluorenedione Derivatives

Abstract

PSS/MEH-PPV/IF-dione-F/AI (gate)/IF-dione-F/Al (source). The characteristics of the vertical organic light emitting transistors were investigated from the measurements of radiancevoltage characteristics and external quantum efficiency. Furthermore, air stability was studied from the measurements of characteristics, impedance spectroscopy and contact angle.