Characteristics and radiation effects of MOS capacitors with Al2O3 layers in p-type silicon

Soliman, F. A.; Al-Kabbani, A.S.S.; Sharshar, K.A.A.; Rageh, M.S.I.

doi:10.1016/0969-8043(94)00141-l

Cited by 17 publications

(7 citation statements)

References 3 publications

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“…Fig. 3 shows the corresponding radiation induced charge as calculated from the equation: DV the flatband voltage shift due to irradiation [14]. The chargedose relationship is almost linear for the range displayed.…”

Section: Resultsmentioning

confidence: 96%

“…Al 2 O 3 , which is an alternative dielectric in the microelectronic technology, has been employed in MOS capacitors used for radiation sensing. Radiation effects on MOS capacitors with a Al 2 O 3 dielectric layer was previously studied to some extent [14,15]. In this paper, we present an evaluation of Al 2 O 3 based MOS devices as a radiation sensor and a direct comparison of the sensitivity with SiO 2 based devices.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Use of Al2O3 layer as a dielectric in MOS based radiation sensors fabricated on a Si substrate

Yılmaz

Doğan

Turan

2008

Nuclear Instruments and Methods in Physics Research Section B:

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Section: Resultsmentioning

confidence: 96%

Section: Introductionmentioning

confidence: 99%

Use of Al2O3 layer as a dielectric in MOS based radiation sensors fabricated on a Si substrate

Yılmaz

Doğan

Turan

2008

Nuclear Instruments and Methods in Physics Research Section B:

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“…Investigation of the changes in MOS-capacitor properties is considered the simplest, yet the most effective method of understanding the mechanisms of trap formation in the oxide/semiconductor interface under the influence of nuclear radiation [29]. All such mechanisms result in a build up of a charge density in the oxide layer and a creation of trapping states in the oxide/semiconductor interface.…”

Section: B Dosimeters Based On Mepc Filmsmentioning

confidence: 99%

Thin and thick films of metal oxides and metal phthalocyanines as gamma radiation dosimeters

Arshak¹,

Arshak²,

Zleetni³

et al. 2004

IEEE Trans. Nucl. Sci.

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Numerous efforts were devoted to investigating the influence of radiation on metal oxides and polymer materials for dosimetry applications. Metal oxides, such as NiO, LaFeO 3 , CeO 2 , TeO 2 , In 2 O 3 , SiO and MnO, and polymers, such as CuPc, NiPc, MnPc and CoPc, were used as the active constituents in the fabrication of -radiation sensors. Thin and thick film devices were made in various topologies to form resistors, capacitors, pn-junctions and transistors. It was found that the properties of the active films (and, hence, their sensitivity to radiation) could be controlled by doping their constituent materials with carbon and mixing them in different proportions.The 60 Co and 137 Cs sources were used to expose the samples to -radiation. Current-voltage characteristics, optical absorption spectra, Raman spectra, SEM and XRD measurements were recorded for the samples after each exposure procedure and values of radiation damage were estimated.Thin film devices were found to be more sensitive to radiation than their thick film counterparts. Annealing was used to restore the properties of thick film devices after they were damaged with radiation. Thick films could be therefore reused on a repeatable basis, but thin film devices could not, as the heat treatments necessary for annealing were found to cause diffusion of the electrode materials.In this work, the possibility of fabricating a device that would satisfy the requirement of a particular application, such as sensitivity to -radiation and working dose region, was experimentally demonstrated. Based on the findings, these devices were found to provide a cost-effective alternative for room temperature real time -radiation dosimeter applications.Index Terms-Gamma radiation, metal oxides, metal phthalocyanines, MOS, optical and electrical properties, personal dosimeter, pn-junction, thin and thick films.

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“…The influences of gamma irradiation on Al 2 O 3 MOS capacitors have been investigated in the literature [15][16][17][18] since last decades and briefly, the results demonstrate that the characteristics of devices can be affected by irradiation due to generated and trapped charge in the structure. However, the responses of barrier height, doping concentration, R s and D it to irradiation have not been holistically investigated.…”

Section: Introductionmentioning

confidence: 98%

Influences of Co-60 gamma-ray irradiation on electrical characteristics of Al2O3 MOS capacitors

Kaya

Yılmaz

2014

J Radioanal Nucl Chem

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Effects of gamma-ray irradiation on the electrical characteristics of Al 2 O 3 MOS capacitors such as barrier height, acceptor concentration, series resistance and interface state parameters have been studied by analyzing capacitance-voltage (C-V) and conductance-voltage (G/ x-V) measurements. The fabricated MOS capacitors were irradiated with gamma-rays at doses up to five grays. C-V and G/x-V measurements were recorded prior to and after irradiation at high frequency. The results show that the measured capacitance and conductance values decreased with increasing in irradiation dose and C-V and G/x curves has been shifted toward the negative voltages. Moreover, the series resistance (R s ) and density of interface states increased with increasing in irradiation dose and density of interface states (D it ) were calculated as order of 10 12 eV -1 cm -2 prior to and after irradiation. Due to presence and variations in the R s values, the corrected and the measured C-V and G/x-V exhibited different behaviors. Therefore other electrical characteristics were assessed from corrected C c characteristics. It was observed that acceptor concentration decreased with increasing in barrier height of device due to changes in interface states and diffusion potential.

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Characteristics and radiation effects of MOS capacitors with Al2O3 layers in p-type silicon

Cited by 17 publications

References 3 publications

Use of Al2O3 layer as a dielectric in MOS based radiation sensors fabricated on a Si substrate

Use of Al2O3 layer as a dielectric in MOS based radiation sensors fabricated on a Si substrate

Thin and thick films of metal oxides and metal phthalocyanines as gamma radiation dosimeters

Influences of Co-60 gamma-ray irradiation on electrical characteristics of Al2O3 MOS capacitors

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