Characteristics in SiC-CMP using MnO<sub>2</sub> slurry with Strong Oxidant under Different Atmospheric Conditions

Kurokawa, Syuhei; Doi, Toshiro; Ohnishi, Osamu; Yamazaki, Tsutomu; Tan, Zhe; Yin, Tao

doi:10.1557/opl.2013.903

Cited by 17 publications

(6 citation statements)

References 6 publications

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“…The polishing of 4H-SiC was reported to be enhanced in slurries containing MnO 2 as an abrasive. 35,42 MnO 2 is a strong oxidizer that can oxidize several organic compounds having unsaturated bonds by its reduction to Mn +2 . XPS analysis of the SiC surfaces exposed to MnO 2 slurry showed the presence of an oxide layer whose thickness increases as a function of exposure time.…”

Section: Resultsmentioning

confidence: 99%

Effect of Transition Metal Compounds on Amorphous SiC Removal Rates

Lagudu

Babu

2014

ECS J. Solid State Sci. Technol.

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We show here that transition metal compounds when used as additives to silica dispersions enhance a-SiC removal rates (RRs). Silica slurries containing KMnO 4 gave RRs as high as 2000 nm h −1 at pH 4. Addition of CuSO 4 to this slurry further enhanced the RRs to ∼3500 nm h −1 at pH 6. Furthermore, addition of a low concentration of 250 ppm Brij-35 to this slurry suppressed the RRs of SiO 2 to zero, while retaining the RRs of a-SiC at ∼2700 nm h −1 , a combination of RRs that is appropriate for hard mask polishing. The underlying mechanisms causing the enhancement in the RRs of a-SiC in the presence of transition metal compounds is discussed based on the RR data and XPS analysis of post-polished wafer surfaces. It is shown that a mixed redox system consisting of the oxidation of a-SiC by KMnO 4 enhanced by the catalytic activity of the Cu(II) salt is responsible for the rapid oxidation of a-SiC and the observed enhancement in polish rate with silica based slurries. The adsorption characteristics of Brij-35 on the oxide and carbide surfaces are described based on thermogravimetry data and in achieving the desired polish rate selectivity. Amorphous SiC (a-SiC) thin films, deposited at a low temperature of ∼400• C using a plasma enhanced chemical vapor deposition (PECVD) process, have excellent chemical and temperature resistance and a wide bandgap. These characteristics make them suitable as etch masking layers during advanced semiconductor, solar cell and micro-electro mechanical system (MEMS) fabrication.1-16 Examples of these applications include deep etching of glass or silicon, protection of low-K dielectric films, as a stop layer in STI CMP, etc. 10,12,14 The planar surface necessary to use a-SiC as a hard mask in these applications can be potentially achieved using chemical mechanical planarization (CMP).14 Since, the a-SiC hard mask layers typically protect an underlying dielectric material, generally SiO 2 , the CMP polish process must be selective to it. To the best of our knowledge slurries that can selectively polish SiC over SiO 2 have not been reported.Early work on developing slurries for 6H-SiC CMP showed that Cr 2 O 3 -based slurries increased the removal rates (RRs) compared to the traditional abrasives and oxidizers. 24 reported that slurries containing "soft functionalized particles" coated with several layers of "transition metal catalysts" yielded RRs ranging from 100 nm h −1 to 2500 nm h −1 depending on the concentration of the additives, the abrasives used and the operating conditions. The final surface quality was reported to be very good. In all these cases where high RRs were reported, 22,24 the effect of pressure and other operating conditions, the role of pH, the mechanism of the polish process and the role of various additives that are typically required for evaluating CMP processes were not discussed. More importantly, no slurries that lead to a selective removal of any type of SiC over * Electrochemical Society Active Member.z E-mail: babu@clarkson.edu SiO 2 that is needed for mask ...

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Section: Resultsmentioning

confidence: 99%

Effect of Transition Metal Compounds on Amorphous SiC Removal Rates

Lagudu

Babu

2014

ECS J. Solid State Sci. Technol.

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“…Kurokawa et al [106] proposed a CMP method using a bell-jar-type CMP machine and KMnO 4 as an oxidizer. Belljar CMP is a method that increases the processing efficiency of the CMP by conducting it in a chamber to control the ambient pressure, thereby enabling the application of CMP in various gas environments.…”

Section: Hybridization Of Cmp Systemmentioning

confidence: 99%

Approaches to Sustainability in Chemical Mechanical Polishing (CMP): A Review

Lee

Kim

Jeong

2021

Int. J. of Precis. Eng. and Manuf.-Green Tech.

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Chemical mechanical polishing (CMP) is an essential planarization process for semiconductor manufacturing. The application of CMP has been increasing in semiconductor fabrication for highly integrated devices. Recently, environmental burden caused by the CMP process was assessed because of interest in the global environment. In this study, the previously reported impacts of CMP on the environment and studies conducted on developing various methods to reduce environmental burden are reviewed. In addition to analyzing the impacts of CMP, this paper introduces a method for treating CMP wastewater and improving the material removal efficiency through the improvement of CMP consumables. Finally, the authors review research on hybridization of the CMP process and discuss the direction in which CMP technology will progress to improve sustainability in the future.

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“…5,9 Chemical mechanical polishing (CMP) [10][11][12] is the effective method to provide global planarization through combing chemical reactions with mechanical abrading. Kurokawa et al 13 polished the 4H-SiC using MnO 2 abrasive slurry and KMnO 4 additive in a closed bell jar-type chamber polisher, and obtained higher removal rate of 70 nm h −1 . Yang et al 14 proposed a three-step silicon carbide (SiC) wafer manufacturing process using slurryless electrochemical mechanical polishing.…”

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confidence: 99%

Photocatalysis-Assisted Chemical Mechanical Polishing of SiC Wafer using a Novel SiO₂@TiO₂ Core-Shell Composite Nanoparticles Slurry

Zhou,

Luo,

Chen

et al. 2023

ECS J. Solid State Sci. Technol.

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Silicon carbide (SiC) is considered a promising third-generation semiconductor material, but the surface fabrication of an SiC wafer is very challenging. Photocatalysis-assisted chemical mechanical polishing of an Si-face SiC wafer using a novel SiO2@TiO2 core-shell composite nanoparticles slurry is developed for attaining high removal efficiency and high surface quality of an SiC wafer. The preparation of the SiO2@TiO2 core-shell nanoparticles is introduced, and the characteristics of the new composite particle abrasive are studied through scanning electron microscopy, transmission electron microscopy, size distribution, X-ray diffraction, and Fourier infrared spectroscopy analysis. Polishing performances of SiC wafer using the slurry with the prepared SiO2@TiO2 composite nanoparticles under UV light are evaluated. The removal rate by the slurry with the SiO2@TiO2 composite nanoparticles presents much higher than that by the slurry without the SiO2@TiO2 nanoparticles. Meanwhile, the ultra-smooth surface with the low roughness and atomic step structure could be acquired. The relative removal schematic of the slurry with the photo-active composite nanoparticles abrasive towards the polishing of the SiC surface is proposed.

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Characteristics in SiC-CMP using MnO₂ slurry with Strong Oxidant under Different Atmospheric Conditions

Cited by 17 publications

References 6 publications

Effect of Transition Metal Compounds on Amorphous SiC Removal Rates

Effect of Transition Metal Compounds on Amorphous SiC Removal Rates

Approaches to Sustainability in Chemical Mechanical Polishing (CMP): A Review

Photocatalysis-Assisted Chemical Mechanical Polishing of SiC Wafer using a Novel SiO₂@TiO₂ Core-Shell Composite Nanoparticles Slurry

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Characteristics in SiC-CMP using MnO2 slurry with Strong Oxidant under Different Atmospheric Conditions

Cited by 17 publications

References 6 publications

Effect of Transition Metal Compounds on Amorphous SiC Removal Rates

Effect of Transition Metal Compounds on Amorphous SiC Removal Rates

Approaches to Sustainability in Chemical Mechanical Polishing (CMP): A Review

Photocatalysis-Assisted Chemical Mechanical Polishing of SiC Wafer using a Novel SiO2@TiO2 Core-Shell Composite Nanoparticles Slurry

Contact Info

Product

Resources

About

Characteristics in SiC-CMP using MnO₂ slurry with Strong Oxidant under Different Atmospheric Conditions

Photocatalysis-Assisted Chemical Mechanical Polishing of SiC Wafer using a Novel SiO₂@TiO₂ Core-Shell Composite Nanoparticles Slurry