Characteristics of a-plane GaN films grown on optimized silicon-dioxide-patterned r-plane sapphire substrates

Emission Characteristics of InGaN/GaN Core-Shell Nanorods Embedded in a 3D Light-Emitting Diode

“…However, the use of an m -plane bulk substrate increases the cost of devices. Moreover, a nonpolar-plane-based heteroepilayer grown on a -plane GaN or r -plane sapphire substrates is still needed to prevent the formation of structural defects such as prismatic and basal stacking faults as well as partial dislocations to ensure sufficient crystal quality [ 5 , 6 ]. In fact, the results of research on GaN nanorods (NRs) and nanowires (NWs) have produced advances and interesting outcomes in a number of application fields [ 7 – 9 ].…”

Reduction in crystalline quality anisotropy for non-polar a-plane GaN directly grown on titanium patterned sapphire substrate

“…To simplify the manufacturing process, direct ELOG, which means that the a-plane GaN films directly grown on silicon-dioxide-patterned r-plane sapphire substrates, have been proposed. 17,18) Low defect density and decreased anisotropy have been achieved by this technique, but these GaN films still need to be thicker than 10 μm to get fully coalesced.…”

“…In this letter, we report on nonpolar a-plane (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) GaN films with high crystalline quality and decreased anisotropy directly grown on Ti-PSS. This technique is highly advantageous for thinner coalescence thickness, lower cost, and easier realization.…”

“…To further confirm the increase of the mosaic size in the a-plane GaN films grown on Ti-PSS, room temperature Raman measurements under x(y, y)x and x(z, z)x backscattering configurations were performed on these two samples. The x, y, z axis are along the [11][12][13][14][15][16][17][18][19][20], [1-100] and [0001] directions of GaN, respectively. Figure 6(a) shows Raman spectroscopy of the GaN films grown on FSS and Ti-PSS under the x(z, z)x reflection geometry.…”