Abstract:We investigated the ellipsometer-based characterization method being used to quickly evaluate the depth of the damage layer in ion-implanted 4H-SiC. This method had the advantages of low cost, convenience, and non-destructiveness. Optical absorption of n-type 4H-SiC substrate, P+ ion-implanted, laser-annealed, and conventional high-temperature annealed wafers were investigated at room temperature. Three peaks were observed in the absorption spectra collected for various samples. The degree of electrical activa… Show more
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