Characteristics of Al/Ge Schottky and ohmic contacts at low temperatures

Pitale, Shreyas S.; Ghosh, Manoranjan; Singh, Swarnima; Manasawala, Husain; Patra, G.D.; Şen, Sinan

doi:10.1016/j.mssp.2021.105820

Cited by 8 publications

(2 citation statements)

References 40 publications

(36 reference statements)

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“…Note that previously published works promote this model for determining the total effective activation energy. [ 52,53 ]

\begin{array}{*{20}{c}}{{J_{TE}}\left( T \right) = {A^*}{T^2}\exp \frac{{ - q{\phi _{eSBH}}}}{{{k_B}T}}}\end{array}

where J TE is the measured current density through the device, A * is the effective Richardson constant, T is the corresponding temperature and qϕ eSBH is the total effective activation energy. Thus, the total effective activation energy can be extracted by measuring the I/V ‐characteristic at different temperatures and applying the natural logarithm to extract the barrier height of the previous equation (see Figure S9a, Supporting Information).…”

Section: Resultsmentioning

confidence: 99%

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Reconfigurable Field‐Effect Transistor Technology via Heterogeneous Integration of SiGe with Crystalline Al Contacts

Fuchsberger

Wind

Sistani

et al. 2023

Adv Elect Materials

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Reconfigurable field‐effect transistors, capable of being dynamically programmed during run‐time, overcome the static nature of conventional complementary metal‐oxide semiconductors by reducing the transistor count and the circuit path delay. Thereby, SiGe and Ge are predicted to boost drive currents, switching speed and to reduce power consumption. Nevertheless, Ge‐based reconfigurable field‐effect transistor prototypes have so far fallen short in reaching both the promised performance due to interface instability to their contacts and gate oxides, as well as in reaching the current–voltage symmetry necessary for circuit applicability. Here, a top‐down fabricated SiGe‐based reconfigurable transistor technology is reported that is comprised of a vertical Si‐Si0.67Ge0.33 heterostructure enabling the envisioned high and symmetric on‐currents of both n‐ and p‐type operation. Monolithic integration with single‐elementary crystalline Al contacts alleviates process variability compared to conventional Ni‐silicide/Ni‐germanide contacts and introduces an ultra‐thin Si interlayer providing stability and equal injection efficiency of holes and electrons. The implementation of a three top‐gate transistor in combination with a hysteresis‐free Si/SiO2/HfO2 gate stack enhances polarity control and leakage current suppression to limit static power dissipation. Importantly, the obtained Al‐Si‐SiGe multi‐heterojunction and advanced reconfigurable transistor design is the first Ge‐based technology showing the envisioned stability and performance enhancements.

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“…Note that previously published works promote this model for determining the total effective activation energy. [ 52,53 ]