Characteristics of aluminum films prepared by metalorganic chemical vapor deposition using dimethylethylamine alane on the plasma-pretreated TiN surfaces

Atomic Layer Deposition of Aluminum Metal Films Using a Thermally Stable Aluminum Hydride Reducing Agent

“…The rms surface roughness was determined by atomic force microscopy to be 17.1 and 19.0 nm for films deposited at 140 °C after 200 (73 nm thick) and 300 (102 nm thick) cycles, respectively (see SI). CVD Al metal films often have similar high surface roughnesses. ,,, Importantly, the Al films have a smooth, mirror-like appearance immediately upon removal from the reactor, but the films rapidly turn less reflective due to oxidation. Accordingly, some of the surface roughness may arise from surface oxidation.…”

“…Oxide-free TiN or a different substrate material that forms a strong interface with Al metal might enable smoother films at reduced thicknesses. H 2 plasma-treated TiN has also been shown to improve nucleation of Al CVD …”

“…CVD Al metal films often have similar high surface roughnesses. 23,29,47,48 Importantly, the Al films have a smooth, mirror-like appearance immediately upon removal from the reactor, but the films rapidly turn less reflective due to oxidation. Accordingly, some of the surface roughness may arise from surface oxidation.…”

“…H 2 plasma-treated TiN has also been shown to improve nucleation of Al CVD. 47 Figure 4 shows grazing incidence X-ray diffraction (GI-XRD) patterns for films deposited after 200 cycles at 100, 120, and 140 °C. The observed reflections exactly match the reference pattern for Al metal.…”