Abstract:For almost three decades, InGaN (indium gallium nitride) quantum well (QW) lasers have received a lot of interest from the scientific research community. Recently, this material system has become probably the most intensively studied among all the material systems used for quantum well lasers. We simulated the characteristics of an In 0.02 Ga 0.98 N QW laser at a wavelength of 462 nm, particularly the carrier concentration distribution, the potential distribution, the energy band diagram, the wave intensity pr… Show more
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