Characteristics of argon-ion-implanted amorphous-InGaZnO

Yasuta, Keisuke; Ui, T.; Ikeda, Takeshi; Matsuo, Daisuke; Sakai, Takeyasu; Dohi, Shojiro; Setoguchi, Yoshitaka; Takahashi, Eiji J.; Andoh, Yasunori; Tatemichi, Junichi

doi:10.23919/am-fpd52126.2021.9499156

Cited by 2 publications

(2 citation statements)

References 7 publications

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“…[22][23][24] Section III.C compares the change in DoS of a-IGZO TFTs after plasma and ion implantation methods are applied to the full active channel. Extensive prior research has been performed on plasma [25][26][27][28][29][30][31][32][33][34] and ion implantation [35] treatment of a-IGZO TFTs. Such plasma treatment have a variety of purposes ranging from defect creation [25,31] to defect passivation [26,36,37] to use as a dry etchant for the source-drain electrode metal.…”

Section: Introductionmentioning

confidence: 99%

Illuminating Trap Density Trends in Amorphous Oxide Semiconductors with Ultrabroadband Photoconduction

Mattson

Vogt

Wager

et al. 2023

Adv Funct Materials

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Under varying growth and device processing conditions, ultrabroadband photoconduction (UBPC) reveals strongly evolving trends in the defect density of states (DoS) for amorphous oxide semiconductor thin‐film transistors (TFTs). Spanning the wide bandgap of amorphous InGaZnOx (a‐IGZO), UBPC identifies seven oxygen deep donor vacancy peaks that are independently confirmed by energetically matching to photoluminescence emission peaks. The subgap DoS from 15 different types of a‐IGZO TFTs all yield similar DoS, except only back‐channel etch TFTs can have a deep acceptor peak seen at 2.2 eV below the conduction band mobility edge. This deep acceptor is likely a zinc vacancy, evidenced by trap density which becomes 5‐6× larger when TFT wet‐etch methods are employed. Certain DoS peaks are strongly enhanced for TFTs with active channel processing damage caused from plasma exposure. While Ar implantation and He plasma processing damage are similar, Ar plasma yields more disorder showing a ≈2 × larger valence‐band Urbach energy, and two orders of magnitude increase in the deep oxygen vacancy trap density. Changing the growth conditions of a‐IGZO also impacts the DoS, with zinc‐rich TFTs showing much poorer electrical performance compared to 1:1:1 molar ratio a‐IGZO TFTs owing to the former having a ∼10 × larger oxygen vacancy trap density. Finally, hydrogen is found to behave as a donor in amorphous indium tin gallium zinc oxide TFTs.

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Section: Introductionmentioning

confidence: 99%

Illuminating Trap Density Trends in Amorphous Oxide Semiconductors with Ultrabroadband Photoconduction

Mattson

Vogt

Wager

et al. 2023

Adv Funct Materials

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“…In a-IGZO TFT processing, plasma treatment method as the a-IGZO sheet resistance reduction in the source and drain (S/D) region is widely used (3,4). On the other hand, we propose ion implantation method for the sheet resistance reduction, which has penetration ability and microfabrication processability (5)(6)(7)(8). In our previous work, we elucidated that a-IGZO sheet resistance reduction can be attributed to oxygen vacancy (Vo) generated by noble gas argon ion (Ar + ) implantation.…”

Section: Introductionmentioning

confidence: 99%

(Invited, Digital Presentation) Ion Implantation for Amorphous-InGaZnO Sheet Resistance Control Technique

Ui¹,

Yasuta²,

Yamane³

et al. 2022

ECS Trans.

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As a next-generation electronics material, amorphous-InGaZnO (a-IGZO) film devices were investigated. In order to further utilize a-IGZO films, we carried out conventional ion of boron (B+) or neon (Ne+) implantations in a-IGZO thin films on glass and analyzed the implanted a-IGZO via Hall measurement with wet etching. In addition, a-IGZO thin film transistor processes with the implantation were carried out. As a result, we find that both ions drastically decrease a-IGZO sheet resistances. However, we observed oxygen vacancy area increase in the case of Ne+ implanted a-IGZO in 300 oC post annealing, which indicates Ne diffuses in a-IGZO film. On the other hand, B diffusion was not observed by depth profile comparison between the implanted samples with and without annealing. Furthermore, we extract key device parameters, such as effective channel length and ON/OFF current ratio, which can be applied to a-IGZO device processing.

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Characteristics of argon-ion-implanted amorphous-InGaZnO

Cited by 2 publications

References 7 publications

Illuminating Trap Density Trends in Amorphous Oxide Semiconductors with Ultrabroadband Photoconduction

Illuminating Trap Density Trends in Amorphous Oxide Semiconductors with Ultrabroadband Photoconduction

(Invited, Digital Presentation) Ion Implantation for Amorphous-InGaZnO Sheet Resistance Control Technique

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