Characteristics of Charge Persistence in InGaAs/InP Single-Photon Avalanche Diode

Lee, Yi-Shan; Chen, Kuan‐Yu; Chien, Sheng-Yu; Chang, Shih-Cheng

doi:10.1109/lpt.2018.2874041

Cited by 8 publications

(3 citation statements)

References 11 publications

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“…With respect to our previous-generation SPADs, we increased the charge in the charge layer, achieving a lower electric field in the InGaAs absorption region; this reduces the contribution to DCR of field-enhanced generation from this region, leading to an overall improvement of the device dark count rate [16]. However, the electric field cannot be too small inside the SPAD active volume, otherwise the temporal response of the detector and the charge persistence effect [17] [18] would be degraded. To address such potential issues, we ensured that the hole velocity in the InGaAs layer is still saturated with such low electric field [19], not to worsen the SPAD timing jitter.…”

Section: A Design Of a Low-noise Detectormentioning

confidence: 99%

Low-Noise InGaAs/InP Single-Photon Avalanche Diodes for Fiber-Based and Free-Space Applications

Signorelli

Telesca

Conca

et al. 2022

IEEE J. Select. Topics Quantum Electron.

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We present the design and the experimental characterization of a new InGaAs/InP single-photon avalanche diode (SPAD), with two different diameters: i) a 10 µm device, suitable for optical fiber-based quantum applications; ii) a 25 µm one, more appropriate for freespace applications. Compared to a previous generation, we improved the design of the double zinc diffusion and optimized the layer structure. We achieved low dark count rate, around 1 kcps and 4 kcps at 225 K and 5 V excess bias for 10 µm and 25 µm devices, respectively, and down to few tens of counts per seconds at 175 K for the 10 µm detector. At 5 V excess bias and 225 K temperature, both devices also show a high photon detection efficiency (33% at 1064 nm, 31% at 1310 nm and 25% at 1550 nm for the 10 µm SPAD). Afterpulsing has been measured with a custom readout integrated circuit, achieving very low probability values. Timing jitter is comparable to previous-generation devices.

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Section: A Design Of a Low-noise Detectormentioning

confidence: 99%

Low-Noise InGaAs/InP Single-Photon Avalanche Diodes for Fiber-Based and Free-Space Applications

Signorelli

Telesca

Conca

et al. 2022

IEEE J. Select. Topics Quantum Electron.

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“…There is no thermal-assisted generation because we perform measurements with fixed temperatures. We think that this effect is due to a charge-persistence effect, described at works [35]- [37].…”

Section: B Dcr Dependenciesmentioning

confidence: 83%

Dependence of Functional Parameters of Sine-Gated InGaAs/InP Single-Photon Avalanche Diodes on the Gating Parameters

et al. 2022

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In this paper, we investigated a self-developed sine wave gated single-photon detector (SPD) for 1550 nm wavelength primary for quantum key distribution (QKD) usage. We studied the influence of DC bias voltage and AC gate amplitude on the SPD's functional parameters and presented a simple and effective algorithm for its optimization. Such optimization showed practical benefits while SPD was set up on the QKD device. We admitted that the dark count rate decreases with an increase in gating voltage with fixed photon detection efficiency. We observed the charge persistence effect in sine-gated SPDs, which previously had been observed only at square-pulses gated SPDs, and showed that this effect is limiting for infinity increasing gate amplitude.

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“…When PDP is measured by illuminating the entire chip area, inaccuracies in estimating the active device area could impact the result significantly [13]. Moreover, charge persistence could cause uncertainty in the active area especially at low temperatures [12], [28], [29]. PDP is calculated by the equation…”

Section: Photon Detection Probabilitymentioning

confidence: 99%

Guard-Ring-Free InGaAs/InP Single-Photon Avalanche Diode Based on a Novel One-Step Zn-Diffusion Technique

Kizilkan

Karaca

Pešic

et al. 2022

IEEE J. Select. Topics Quantum Electron.

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This work presents a novel InGaAs/InP SPAD structure fabricated using a selective area growth (SAG) method. The surface topography of the selectively grown film deposited within the 70 µm diffusion apertures is used to engineer the Zn diffusion profile to suppress premature edge breakdown. The device achieves a highly uniform active area without the need for shallow diffused guard ring (GR) regions that are inherent in standard InGaAs/InP SPADs. We have obtained 33% and 43% photon detection probability (PDP) at 1550 nm, with 5 V and 7 V excess bias, respectively. These measurements were performed at 300K and 225K. The dark count rate (DCR) per unit area at room temperature and at 5 V excess bias is 430 cps/µm 2 and it decreases to 5 cps/µm 2 at 225K. Timing jitter is measured with passive quenching at 1550 nm as 149 ps at full-width-at-half-maximum (FWHM), (300K, 5 V excess bias). The proposed technology is suitable for a number of applications, including optical time-domain reflectometry (OTDR), quantum information, and light detection and ranging (LiDAR).

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Characteristics of Charge Persistence in InGaAs/InP Single-Photon Avalanche Diode

Cited by 8 publications

References 11 publications

Low-Noise InGaAs/InP Single-Photon Avalanche Diodes for Fiber-Based and Free-Space Applications

Low-Noise InGaAs/InP Single-Photon Avalanche Diodes for Fiber-Based and Free-Space Applications

Dependence of Functional Parameters of Sine-Gated InGaAs/InP Single-Photon Avalanche Diodes on the Gating Parameters

Guard-Ring-Free InGaAs/InP Single-Photon Avalanche Diode Based on a Novel One-Step Zn-Diffusion Technique

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