Characteristics of current distribution by designed electrode patterns for high power ThinGaN LED

Tu, Sheng; Chen, J.C.; Hwu, Farn Shiun; Sheu, Gwo Jiun; Lin, Feng-Wei; Kuo, Shin-Hong; Chang, Jenq Yang; Lee, Chien Chieh

doi:10.1016/j.sse.2010.04.044

Cited by 24 publications

(13 citation statements)

References 16 publications

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“…4a). Herein, the forward voltage was measured for a single n -contact before packaging; therefore, it can be further reduced for double n -contacts after packaging because an additional n -contact can mitigate current accumulation underneath the single n -contact pad36. Besides, to verify the reliable operation of VLEDs with CF-based TCEs, we measured reverse leakage currents during a voltage sweep from 0 to −10 V, as shown in the inset of Fig.…”

Section: Discussionmentioning

confidence: 99%

Fabrication of wide-bandgap transparent electrodes by using conductive filaments: Performance breakthrough in vertical-type GaN LED

Kim

et al. 2014

Sci Rep

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For realizing next-generation solid-state lighting devices, performance breakthroughs must be accomplished for nitride-based light-emitting diodes (LEDs). Highly transparent conductive electrodes (TCEs) may be key to achieving this goal, as they provide uniform current injection and distribution across a large device area, eventually increasing the light output power. However, the trade-off between electrical conductivity and optical transmittance of LEDs must be addressed. Herein, we introduce a novel strategy based on TCEs fabricated using wide-bandgap (WB) materials such as SiNx, incorporated beneath the n-type electrode of vertical-type LEDs, and show the feasibility of this strategy. We employ a novel electrical breakdown (EBD) technique to form conductive filaments (or current paths) between a TCE and n-GaN (GaN: gallium nitride). By employing the EBD process, we obtain both ohmic behavior for SiNx TCE/n-GaN and a current spreading effect across n-GaN. These results demonstrate the tremendous potential of WB-TCEs for use in high-performance optoelectronic devices.

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Section: Discussionmentioning

confidence: 99%

Fabrication of wide-bandgap transparent electrodes by using conductive filaments: Performance breakthrough in vertical-type GaN LED

Kim

et al. 2014

Sci Rep

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“…Further enhancement of luminous flux, as well as the efficiency and reliability of power LEDs, are very crucial to promoting SSL. For the past decade, efforts to tackle the current crowding issues in high power LEDs by employing various methods such as a vertical-conducting structure [1][2][3][4][5], a current spreading layer (CSL) [6][7][8] and a micro-LED (l-LED) structure [9][10][11][12][13], have been demonstrated. Among these approaches, l-LEDs have been shown having better uniformity in respect to current distribution and enhancement related to light output power (LOP) as compared to that of conventional lateral LEDs.…”

Section: Introductionmentioning

confidence: 99%

Enhanced light emission in vertical-structured GaN-based light-emitting diodes with trench etching and arrayed p-electrodes

Lin

Wang

et al. 2015

Solid-State Electronics

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“…The many advantages of LEDs, such as their narrow spectrum, long lifetime, and good mechanical stability [1], have led to them gradually replacing some conventional light sources. High-brightness LEDs have demonstrated excellent ability to function in back and general lighting applications [2].…”

Section: Introductionmentioning

confidence: 99%

“…In addition, the superior heat dissipation and better current spreading of the LED make it able to operate under higher power conditions. There are some methods to increase the light output of a LED chip, e.g., to design a better electrode pattern for a single LED chip [1], [3]- [6] and to manufacture a monolithic LED chip array [7], [8]. When the input power of a LED chip is enlarged, it results in an increase in the current and heat crowding.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

A Numerical Model for Studying Multimicrochip and Single-Chip LEDs With an Interdigitated Mesa Geometry

Hwu¹,

Sung

Chen

et al. 2013

IEEE Photonics J.

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A 3-D numerical model has been developed to investigate the transient thermal, electrical, and optical output performance of a single-chip light-emitting diode (LED) with an interdigitated mesa geometry under dc operation and a multimicrochip LED under either dc or full-wave operation. These two LED chips are fabricated on the same sapphire wafer. The junction temperature, the light output power, and the electroluminescence intensity of both LEDs are measured under dc to prove the results of the numerical simulations. The numerical simulation results are in good agreement with the experimental ones. The numerical results indicate that the multimicrochip LED under dc operation will demonstrate the best thermal and light output performance. Utilizing the input power considered in the present computation, the light output power for the multimicrochip LED, under either dc or full-wave operation, is raised continuously. On the other hand, the saturation of the light output is observed for the single-chip LED with interdigitated mesa geometry.

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Characteristics of current distribution by designed electrode patterns for high power ThinGaN LED

Cited by 24 publications

References 16 publications

Fabrication of wide-bandgap transparent electrodes by using conductive filaments: Performance breakthrough in vertical-type GaN LED

Fabrication of wide-bandgap transparent electrodes by using conductive filaments: Performance breakthrough in vertical-type GaN LED

Enhanced light emission in vertical-structured GaN-based light-emitting diodes with trench etching and arrayed p-electrodes

A Numerical Model for Studying Multimicrochip and Single-Chip LEDs With an Interdigitated Mesa Geometry

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