Characteristics of Fe3O4/ZnO nanocomposite as a possible gate dielectric of nanoscale transistors in the field of cyborg

Preparation and characterization of selenium‐decorated graphene quantum dots with high afterglow for application in photodynamic therapy

“…Crystallite size of GQDs was determined to be approximately 3 nm, using Scherer's formula and X‐powder software 27 . GQDs can generate singlet oxygen via a multistage sensitization process and accumulation selectively in tumour cells via the enhanced permeability and retention effect 18,28 …”

ZnO Nanostructures Synthesized by Chemical Solutions

“…Various morphologies of ZnO can be obtained from the sol-gel process including nanorods [3], inhomogeneous films [4,5], inhomogeneous nanoparticles [6] and nanocomposites [7].…”

The low threshold voltage n-type silicon transistors based on a polymer/silica nanocomposite gate dielectric: The effect of annealing temperatures on their operation

“…On the other hands, Si TFTs are fabricated by evaporative methods at high vacuum condition, which limit their usage on a large scale [1][2]. The limitations of silica gate dielectric have caused researchers to study another dielectric material [8][9][10][11][12]. The Van der Waals bonds of the organic materials make the synthesis at low temperatures and deposition via solution processing possible.…”

“…The composite of organic/inorganic dielectric material show synergic features, leading to performance improvement of the devices [10][11][12][13][14][15][16]. Hence, these materials have attracted much attention as they could be used as gate dielectric of FETs [1,[10][11][12][13][14][19][20][21].…”

“…Hence, these materials have attracted much attention as they could be used as gate dielectric of FETs [1,[10][11][12][13][14][19][20][21]. Two key parameters in FET devices are the charge carrier mobility and threshold voltage which strongly depend on nanostructure characteristics of FET channel [22][23].…”