Characteristics of field effect a-Si:H solar cells

Fujioka, Hiroshi; Oshima, Masaharu; Hu, Chenming; Sumiya, Masatomo; Matsuki, Nobuyuki; Miyazaki, Kaori; Koinuma, Hideomi

doi:10.1016/s0022-3093(98)00353-6

Cited by 8 publications

(10 citation statements)

References 6 publications

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“…Unfortunately, MIS cells, though sporting impressive efficiencies, − typically have short operating lifetimes due to surface state instability at the MIS interface . Methods aimed at direct field-effect “doping” of semiconductors, in which the voltage is externally applied to a gate to invert a region of semiconductor, ,,, have been ultimately limited by screening of the gate near the top contact. To be effective, such gating methods must rely on other cumbersome strategies in addition to the gate, such as doping under the top contacts , or having a large Schottky barrier at the top contacts. − Recent encouraging efforts to overcome this limitation have targeted low density-of-states Schottky contacts. − …”

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confidence: 99%

Screening-Engineered Field-Effect Solar Cells

et al. 2012

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Photovoltaics (PV) are a promising source of clean renewable energy, but current technologies face a cost-to-efficiency trade-off that has slowed widespread implementation. We have developed a PV architecture-screening-engineered field-effect photovoltaics (SFPV)-that in principle enables fabrication of low-cost, high efficiency PV from virtually any semiconductor, including the promising but hard-to-dope metal oxides, sulfides, and phosphides. Prototype SFPV devices have been constructed and are found to operate successfully in accord with model predictions.

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confidence: 99%

Screening-Engineered Field-Effect Solar Cells

et al. 2012

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“…A two-dimensional device simulation supported our concept; the collection efficiency for short wavelength light was calculated to increase remarkably in the FESC. Improvements in the open circuit voltage (Voc) and the fill factor (FF) were also predicted by the use of comb electrodes with large work functions (Fujioka et al 1998).…”

Section: Introductionmentioning

confidence: 98%

Device simulation and fabrication of field effect solar cells

et al. 1999

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The performance of a novel hydrogenated amorphous silicon (a-Si:H) solar cell which utilizes the field effect solar cell (FESC) has been investigated both theoretically and experimentally. The theoretical analysis has been done for both p-and n-channel FESCs by employing a two-dimensional device simulator which is based on current continuity and Poisson equations. The calculated performance is compared with that of conventional (p-in) a-Si:H solar cells. The calculation demonstrated that both n-channel and p-channel FESCs could improve the conversion effidency by as much as 50%. In order to check the reliability of simulation, the transport properties of intrinsic a-Si : H film and thin film transistor (TFT) have also been calculated and compared with the experimentally obtained characteristics. Experimental verification of TFT and FESC has been attempted by using MgO and a-SiN : H as dielectric layer materials. Preliminary results are presented.

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“…As an alternative solution to eliminate the problem of doped window layers, as well as to improve solar cell efficiency, we proposed a field-effect a-Si:H solar cell (FESC) based on the concept of forming an n-or p-type layer by using the field-effect instead of impurity doping [11][12][13][14][15]. Two-dimensional device simulations predicted that the conversion efficiency of an a-Si:H solar cell could be improved by approximately 50% using an FESC with an optimized structure and material [13].…”

Section: Introductionmentioning

confidence: 99%

“…Two-dimensional device simulations predicted that the conversion efficiency of an a-Si:H solar cell could be improved by approximately 50% using an FESC with an optimized structure and material [13]. There are two possible ways of forming an FESC: applying a bias voltage to the gate of a metal/insulator/a-Si:H (MIS) structure or polarizing a ferroelectric layer deposited on a-Si:H. We investigated the former in order to study the fundamental characteristics of FESCs under various gate biases.…”

Section: Introductionmentioning

confidence: 99%