Characteristics of flexographic printed indium–zinc-oxide thin films as an active semiconductor layer in thin film field-effect transistors

Dilfer, Stefan; Hoffmann, Rudolf C.; Dörsam, Edgar

doi:10.1016/j.apsusc.2014.09.106

Cited by 23 publications

(24 citation statements)

References 32 publications

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“…[ 4 ] In addition to inkjet-printing, [ 12,16,17,19,23 ] metaloxide TFTs have been fabricated with electrodynamic-jet, [ 24 ] spray pyrolysis, [ 9 ] gravure (glass substrate, 550 °C annealing), [ 25 ] and fl exographic printing (Si wafer, 450 °C annealing). [ 26 ] The inkjet, electrodynamic jet, and spray pyrolysis techniques are typically utilized in noncontact sheet-to-sheet batch processes while the contact gravure and fl exographic printing are readily available also as continuous high-throughput roll-to-roll processes. Also novel combinations of conventional vacuum processes and techniques well known from the fi eld of printing have been proposed to prepare metal-oxide TFTs on fl exible substrates such as inkjet-printed growth inhibitors for the patterning of atomic-layer-deposited (ALD) metal-oxide layers, [ 27 ] and transferring of vacuum-processed functional TFTs from rigid to fl exible substrates by a roll-transfer method.…”

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Flexography‐Printed In₂O₃ Semiconductor Layers for High‐Mobility Thin‐Film Transistors on Flexible Plastic Substrate

et al. 2015

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uniform, continuous and dense layers and is thus more suitable for printed TFTs with larger channel dimensions. Several precursor routes for solution-processed metal-oxide semiconductor layers based on metal alkoxides, [ 14,15 ] and on metal salts such as acetates, nitrates, and chlorides have been reported. [ 16,17 ] Precursors based on metal nitrates have been shown to convert into metal oxides generally at lower temperatures than acetateor chloride-based precursors. [ 17,18 ] In contrast to metal alkoxides, metal nitrates are less sensitive to air humidity and can be processed via an aqueous precursor route. [ 7 ] Based on these advantages, metal nitrates show promise as potential precursor materials for printed low-temperature-processed metal-oxide semiconductors. A large amount of work has concentrated on lowering the conversion temperature of the precursor solutions to semiconducting metal-oxide layers. Functional TFTs have been obtained at ≈200 °C or below (1) via the careful design of precursor chemistry utilizing metal alkoxides with controlled hydrolysis, [ 14,15 ] combustion process, [ 11,19 ] or the addition of oxidizing agents, [ 20 ] (2) via the use of additional energy in conversion such as various wavelengths of UV light, [ 8,15,21 ] or microwaves, [ 22 ] or (3) by employing conditions during annealing that promote effi cient precursor conversion such as ozone or vacuum. [ 6,7,20 ] After the fi rst report on inkjet-printed metal oxide layers from metal chloride precursors by Lee et al. in 2007, [ 16 ] the deposition of metal-oxide semiconductor layers for TFTs has been successfully performed via several printing techniques. [ 4 ] In addition to inkjet-printing, [ 12,16,17,19,23 ] metaloxide TFTs have been fabricated with electrodynamic-jet, [ 24 ] spray pyrolysis, [ 9 ] gravure (glass substrate, 550 °C annealing), [ 25 ] and fl exographic printing (Si wafer, 450 °C annealing). [ 26 ] The inkjet, electrodynamic jet, and spray pyrolysis techniques are typically utilized in noncontact sheet-to-sheet batch processes while the contact gravure and fl exographic printing are readily available also as continuous high-throughput roll-to-roll processes. Also novel combinations of conventional vacuum processes and techniques well known from the fi eld of printing have been proposed to prepare metal-oxide TFTs on fl exible substrates such as inkjet-printed growth inhibitors for the patterning of atomic-layer-deposited (ALD) metal-oxide layers, [ 27 ] and transferring of vacuum-processed functional TFTs from rigid to fl exible substrates by a roll-transfer method. [ 28 ] The previous results clearly indicate the challenges in the processability of materials that need to be overcome to enable large-area electronics fabrication using the industrial high-throughput additive printing processes on fl exible low-cost substrates.In this work, for the fi rst time, the metal-oxide TFT fabrication process was performed on fl exible substrate using process technologies that are roll-to-roll-compatible and industrially...

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Flexography‐Printed In₂O₃ Semiconductor Layers for High‐Mobility Thin‐Film Transistors on Flexible Plastic Substrate

et al. 2015

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“…10,11 The mesoporous TiO 2 matrix is fabricated thanks to sol-gel and EISA methods 12 before incorporating silver ions. Few research studies considering inkjet [16][17][18][19] or exography [20][21][22] to deposit sol gel recently began to appear in electronics, [17][18][19][20]22 photovoltaics 21 and photocatalysis 16 areas. This heterogeneity leads to an inhomogeneous broadening of the localized plasmon resonance (LSPR) of Ag NPs and gives the lms a grey brown color.…”

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confidence: 99%

“…2,14 Such materials were largely developed on rigid support. 20 The issue of the study was to fabricate a TiO 2 :Ag thin lm on polyethylene terephthalate (PET) sheets with processes adaptable to industry. Moreover, to permit the use of such materials in industry, adequate elaboration techniques have to be introduced.…”

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Flexible photochromic Ag:TiO₂ thin films fabricated by ink-jet and flexography printing processes

et al. 2015

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“…(Figure 7c and 7d). 50 It was revealed that printed IZO film thickness strongly depends on printing parameters, and the optimal printing parameters offered a good device performances, with a mobility of 2.4 cm 2 /Vs, on-off ratio of 5.2 × 10 7 , and threshold voltage of 4 V. Choi et al used a gravure printer to fabricate IGZO TFTs. 51 Printing processes were optimized, and the device performance were reported, with a mobility of 0.81 cm 2 /Vs and on-off ratio of 1.36 × 10 6 .…”

Section: Development Of Printed Metal Oxide Tftsmentioning

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Printed Oxide Thin Film Transistors: A Mini Review

Choi

Lin

Cheng

et al. 2015

ECS J. Solid State Sci. Technol.

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Compared to conventional amorphous silicon (a-Si) TFTs, amorphous metal oxide TFTs have superior device performance such as higher mobility, better sub-threshold swing, and lower off-state current. Amorphous metal oxide TFTs have an additional advantage on the device uniformity due to the lack of grain boundary issues in the poly-Si TFTs. Compared with sputtered oxide TFTs, metal oxide TFTs with solution processes have better flexibility and controllability to adjust the composition of chemical solution. Among various solution-based approaches, direct printing is a promising low-cost technique in fabricating TFTs. The printing technique offers several advantages in manufacturing electronics such as a direct writing of materials, reduction of chemical waste, and reproducibility with high-resolution scale, which are not affordable from other solution-based approaches. While many printed OTFTs have been reported, relatively fewer studies, associated with printed metal oxide TFTs, have been pursued. Interests to printed metal oxide TFTs have grown continuously since the first report of a general route toward printed oxide TFTs. A variety of metal oxide materials have been reported as the channel layer of printed metal oxide TFTs. In this mini review paper, the development of printed metal oxide TFTs was discussed including the ink formulations, the types and characteristics of the applied printers, and fabricated thin film transistor characteristics. Lastly the review is concluded with a concise summary and future outlook from an industry perspective. Thin film transistors (TFTs), first reported by Lilienfeld and Heil almost nine decades ago, have continuously being developed and improved for low cost electronic switches.1,2 Advanced fabrication techniques and materials expand its application to low cost, large size, high resolution, and high-speed flat panel displays.3 The greatest advancement was accompanied with the advent of a-Si:H as a semiconductor channel layer.4 Although a-Si:H semiconductor exhibited lower electronic properties (carrier mobility ≤ 1 cm 2 /Vs) than TFTs based on polycrystalline channel layers (e.g. CdS), the electronic transport properties of a-Si:H were sufficient as switching elements in Liquid Crystal Displays, along with other benefits such as lower cost, high uniformity and excellent reproducibility in large area fabrication. However, lower performances of a-Si:H TFTs limit its application in AMOLED display. Metal oxide semiconductors have been intensively researched over the past decade due to their superior electrical properties including high carrier mobility (∼1-100 cm 2 /Vs), high optical transparency, good thermal/environmental durability, and potentially low-manufacturing cost.5,6 Significant progress of metal oxide TFTs has demonstrated the advantages over a-Si:H TFTs as next candidate for high-performance display applications. 7,8 In terms of manufacturing metal oxide semiconductors as the active channel layers in TFTs, gas-phase deposition technique that requires high vacuum f...

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Characteristics of flexographic printed indium–zinc-oxide thin films as an active semiconductor layer in thin film field-effect transistors

Cited by 23 publications

References 32 publications

Flexography‐Printed In₂O₃ Semiconductor Layers for High‐Mobility Thin‐Film Transistors on Flexible Plastic Substrate

Flexography‐Printed In₂O₃ Semiconductor Layers for High‐Mobility Thin‐Film Transistors on Flexible Plastic Substrate

Flexible photochromic Ag:TiO₂ thin films fabricated by ink-jet and flexography printing processes

Printed Oxide Thin Film Transistors: A Mini Review

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Characteristics of flexographic printed indium–zinc-oxide thin films as an active semiconductor layer in thin film field-effect transistors

Cited by 23 publications

References 32 publications

Flexography‐Printed In2O3 Semiconductor Layers for High‐Mobility Thin‐Film Transistors on Flexible Plastic Substrate

Flexography‐Printed In2O3 Semiconductor Layers for High‐Mobility Thin‐Film Transistors on Flexible Plastic Substrate

Flexible photochromic Ag:TiO2 thin films fabricated by ink-jet and flexography printing processes

Printed Oxide Thin Film Transistors: A Mini Review

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Flexography‐Printed In₂O₃ Semiconductor Layers for High‐Mobility Thin‐Film Transistors on Flexible Plastic Substrate

Flexography‐Printed In₂O₃ Semiconductor Layers for High‐Mobility Thin‐Film Transistors on Flexible Plastic Substrate

Flexible photochromic Ag:TiO₂ thin films fabricated by ink-jet and flexography printing processes