Characteristics of GaAsSb single-quantum-well-lasers emitting near 1.3 μm

Blum, O.; Klem, J.F.

doi:10.1109/68.853495

Cited by 48 publications

(23 citation statements)

References 9 publications

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“…Two groups have demonstrated 1.3 m edge-emitting lasers using this active material combination. 3,4 An obvious drawback of this system is the lack of electron confinement for this active material when it is imbedded in GaAs. Other than the small amount of band bending that occurs at the GaAs/GaAsSb and GaAsSb/GaAs interfaces ͑due to the Coulomb attraction from holes confined to the GaAsSb layer͒, there is no electron confinement.…”

Section: Resultsmentioning

confidence: 99%

GaAs-substrate-based long-wave active materials with type-II band alignments

Johnson

Chaparro

Wang

et al. 2001

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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The optimized growth conditions and evidence for type-II alignment in GaAsSb/InGaAs heterostructures are reported. The asymmetric GaAsSb/InGaAs bilayer quantum well grown on GaAs shows promising results for device applications around the wavelength of 1.3 m. Uncompensated type-II GaAs/GaAsSb/GaAs quantum-well systems and strain-compensated GaAsP/GaAs/GaAsSb/GaAs/GaAsP quantum-well systems are compared for 1.3 m applications. Inhomogeneous photoluminescence-linewidth broadening due to lateral composition and thickness variation is reduced from 74 to 40 meV when GaAsP strain-compensation layers are added to GaAsSb-based trilayer quantum-well systems.

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Section: Resultsmentioning

confidence: 99%

GaAs-substrate-based long-wave active materials with type-II band alignments

Johnson

Chaparro

Wang

et al. 2001

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…We note that RT lasing near 1.3 m has been successfully demonstrated for GaAsSb/ GaAs quantum-well structures despite their probable type-II nature. 16,17 In the present 26% Sb structure the long wavelength emission continues to dominate even at very high excitation powers suggesting that a Ͼ1.5 m laser may be possible with this GaAs-based system. Finally we note that a 1.6 m emission at RT has also recently been observed by Ripalda et al 18 from GaAsSb capped InAs QDs.…”

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confidence: 99%

Room-temperature 1.6μm light emission from InAs∕GaAs quantum dots with a thin GaAsSb cap layer

Liu

Steer

Badcock

et al. 2006

Journal of Applied Physics

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It is demonstrated that the emission of InAs quantum dots ͑QDs͒ capped with GaAsSb can be extended from 1.28 to 1.6 m by increasing the Sb composition of the capping layer from 14% to 26%. Photoluminescence excitation spectroscopy is applied to investigate the nature of this large redshift. The dominant mechanism is shown to be the formation of a type-II transition between an electron state in the InAs QDs and a hole state in the GaAsSb capping layer. The prospects for using these structures to fabricate 1.55 m injection lasers are discussed. © 2006 American Institute of Physics. ͓DOI: 10.1063/1.2173188͔ Self-assembled InAs/ GaAs quantum dots ͑QDs͒ are of considerable interest due to their physical properties and potential applications, for example, long wavelength GaAsbased QD lasers operating in the 1.3-1.6 m telecommunications wavelength range. 1 High-performance InAs/ GaAs QD lasers, with emission close to 1.3 m, have been demonstrated using InGaAs, InAl͑Ga͒As, and GaAsSb capping layers ͑CLs͒ to directly cover the InAs QDs. [2][3][4][5][6] In addition, there have been a number of attempts to extend the emission wavelength beyond 1.5 m, with room-temperature ͑RT͒ photoluminescence ͑PL͒ above 1.5 m having been demonstrated for large InAs/ GaAs QDs, 7 GaInNAs/ GaAs QDs, 8 InAs QDs with an In 0.45 Ga 0.55 As CL, 9 InAs QDs with InGaNAs CL, 10 and InAs QDs grown on InGaAs or GaAsSb metamorphic buffer layers. 11,12 In a previous letter, we reported ϳ1.3 m emission from InAs QDs with a GaAsSb CL. 6 Evidence for a type-II system for Sb compositions Ͼ14% was obtained, and a 1.3 m laser was fabricated. In the present letter we show that RT emission at 1.6 m may be obtained by increasing the Sb composition to 26%. The compositional dependence of the electronic band structure is probed using a combination of PL and PL excitation ͑PLE͒.The samples were grown in a V80H molecular beam epitaxy system equipped with conventional solid sources for group-III elements and EPI cracker sources for As and Sb. The QDs were formed by depositing 2.8 monolayers ͑MLs͒ of InAs at a rate of ϳ0

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“…GaAsSb/ GaAs quantum wells ͑QWs͒ have been shown to be one of the most suitable candidates for 1.3 m active regions on the GaAs substrate. [1][2][3][4][5][6][7][8][9][10][11] To further improve VCSEL performance, it is necessary to understand the limitations of this material system and the interaction of the various parameters that impact overall device performance. For example, the gain of this material system is restricted by a less than ideal electron-hole wave function overlap caused by a combination of strongly confined holes and weakly confined electrons, which is a result of a nearly flat conduction band alignment between GaAs and GaAsSb.…”

Section: Introductionmentioning

confidence: 99%

Gain saturation and carrier distribution effects in molecular beam epitaxy grown GaAsSb∕GaAs quantum well lasers

Johnson

et al. 2006

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inGaAs-based room-temperature continuous-wave 1.59 μ m GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy Appl. Phys. Lett. 87, 231121 (2005) GaAsSb/ GaAs quantum well ͑QW͒ lasers grown by solid source molecular beam epitaxy are fabricated into ridge lasers and tested. These devices have a lasing wavelength around 1.2 m that is substantially blueshifted relative to the electroluminescence peak. The magnitude of the blueshift increases as the cavity length is shortened, indicating that the blueshift increases with injection level. This blueshift is attributed to material gain saturation and band filling effects. The internal quantum efficiency is ϳ75%, the transparency current density is ϳ120 A / cm 2 , and the threshold characteristic temperature is ϳ60 K, all typical for GaAsSb/ GaAs based edge emitting lasers. The extracted gain constant is ϳ800 cm −1 for single QW active regions and approximately half that amount for double QWs. This discrepancy is attributed to nonuniform carrier distribution in double QW structures.

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Characteristics of GaAsSb single-quantum-well-lasers emitting near 1.3 μm

Cited by 48 publications

References 9 publications

GaAs-substrate-based long-wave active materials with type-II band alignments

GaAs-substrate-based long-wave active materials with type-II band alignments

Room-temperature 1.6μm light emission from InAs∕GaAs quantum dots with a thin GaAsSb cap layer

Gain saturation and carrier distribution effects in molecular beam epitaxy grown GaAsSb∕GaAs quantum well lasers

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