Characteristics of germanium dry etching using inductively coupled SF6 plasma

Wafer-scale nanostructured black silicon with morphology engineering via advanced Sn-assisted dry etching for sensing and solar cell applications

“…For series C1 samples, the decrease of the pressure increases the mean free path length and the average energy of ions. 37 This makes the SnO x F y passivation layer easier to be etched at a low pressure (15 mTorr), and the GeSn layer with more Sn-content could also work as the mask layer for the formation of b-Si (C1–5%). Due to the increased consumption in the SnO x F y layer, b-Si is nanocone structured (Fig.…”

Fabrication of high quality GaAs-on-insulator via ion-cut of epitaxial GaAs/Ge heterostructure

“…The thermal treatment at 350-400 • C in nitrogen atmosphere induced the splitting in Ge substrate and the formation of Ge-GaAs-on-insulator structure. In order to remove residual Ge layer, inductively coupled SF 6 plasma [16] was performed in a load-locked high-density plasma etch system consisting of an ICP chamber. Raman scattering spectroscopy using 514.5 nm light from an Ar + laser is used to monitor GaAs growth, GaAs/Ge heterostructure transfer and selective etching processes of the fabrication of GaAs-on-insulation.…”

Dry Etching of Germanium with Laser Induced Reactive Micro Plasma

“…Germanium (Ge) is a material which is widely used in micro-electronics, photovoltaic, and micro-optics. Plasma etching of Ge was investigated extensively and many studied have been published related to Ge etching in various configurations [9][10][11][12][13][14][15] using fluorine and chlorine-based processes. In general, both dry etching behavior and characteristics of the etched surface are similar for silicon and germanium due to their similar chemical structure [14][15][16].…”