Characteristics of gravure printed InGaZnO thin films as an active channel layer in thin film transistors

Choi, Youngjoon; Kim, Chan Yun; Jeong, Woong Hee; Kim, Hyun Jae; Chin, Byung Doo; Yu, Jong‐Won

doi:10.1016/j.tsf.2010.04.006

Cited by 51 publications

(40 citation statements)

References 20 publications

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“…[ 6,7,20 ] After the fi rst report on inkjet-printed metal oxide layers from metal chloride precursors by Lee et al in 2007, [ 16 ] the deposition of metal-oxide semiconductor layers for TFTs has been successfully performed via several printing techniques. [ 4 ] In addition to inkjet-printing, [ 12,16,17,19,23 ] metaloxide TFTs have been fabricated with electrodynamic-jet, [ 24 ] spray pyrolysis, [ 9 ] gravure (glass substrate, 550 °C annealing), [ 25 ] and fl exographic printing (Si wafer, 450 °C annealing). [ 26 ] The inkjet, electrodynamic jet, and spray pyrolysis techniques are typically utilized in noncontact sheet-to-sheet batch processes while the contact gravure and fl exographic printing are readily available also as continuous high-throughput roll-to-roll processes.…”

Section: Doi: 101002/adma201502569mentioning

confidence: 99%

Flexography‐Printed In₂O₃ Semiconductor Layers for High‐Mobility Thin‐Film Transistors on Flexible Plastic Substrate

et al. 2015

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uniform, continuous and dense layers and is thus more suitable for printed TFTs with larger channel dimensions. Several precursor routes for solution-processed metal-oxide semiconductor layers based on metal alkoxides, [ 14,15 ] and on metal salts such as acetates, nitrates, and chlorides have been reported. [ 16,17 ] Precursors based on metal nitrates have been shown to convert into metal oxides generally at lower temperatures than acetateor chloride-based precursors. [ 17,18 ] In contrast to metal alkoxides, metal nitrates are less sensitive to air humidity and can be processed via an aqueous precursor route. [ 7 ] Based on these advantages, metal nitrates show promise as potential precursor materials for printed low-temperature-processed metal-oxide semiconductors. A large amount of work has concentrated on lowering the conversion temperature of the precursor solutions to semiconducting metal-oxide layers. Functional TFTs have been obtained at ≈200 °C or below (1) via the careful design of precursor chemistry utilizing metal alkoxides with controlled hydrolysis, [ 14,15 ] combustion process, [ 11,19 ] or the addition of oxidizing agents, [ 20 ] (2) via the use of additional energy in conversion such as various wavelengths of UV light, [ 8,15,21 ] or microwaves, [ 22 ] or (3) by employing conditions during annealing that promote effi cient precursor conversion such as ozone or vacuum. [ 6,7,20 ] After the fi rst report on inkjet-printed metal oxide layers from metal chloride precursors by Lee et al. in 2007, [ 16 ] the deposition of metal-oxide semiconductor layers for TFTs has been successfully performed via several printing techniques. [ 4 ] In addition to inkjet-printing, [ 12,16,17,19,23 ] metaloxide TFTs have been fabricated with electrodynamic-jet, [ 24 ] spray pyrolysis, [ 9 ] gravure (glass substrate, 550 °C annealing), [ 25 ] and fl exographic printing (Si wafer, 450 °C annealing). [ 26 ] The inkjet, electrodynamic jet, and spray pyrolysis techniques are typically utilized in noncontact sheet-to-sheet batch processes while the contact gravure and fl exographic printing are readily available also as continuous high-throughput roll-to-roll processes. Also novel combinations of conventional vacuum processes and techniques well known from the fi eld of printing have been proposed to prepare metal-oxide TFTs on fl exible substrates such as inkjet-printed growth inhibitors for the patterning of atomic-layer-deposited (ALD) metal-oxide layers, [ 27 ] and transferring of vacuum-processed functional TFTs from rigid to fl exible substrates by a roll-transfer method. [ 28 ] The previous results clearly indicate the challenges in the processability of materials that need to be overcome to enable large-area electronics fabrication using the industrial high-throughput additive printing processes on fl exible low-cost substrates.In this work, for the fi rst time, the metal-oxide TFT fabrication process was performed on fl exible substrate using process technologies that are roll-to-roll-compatible and industrially...

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Section: Doi: 101002/adma201502569mentioning

confidence: 99%

Flexography‐Printed In₂O₃ Semiconductor Layers for High‐Mobility Thin‐Film Transistors on Flexible Plastic Substrate

et al. 2015

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“…However, these organic‐based RRAMs are difficult to be apply for skin‐attachable wearable devices due to their sensitivity to external environmental factors. Specifically, moisture, which is both a component of bodily fluids and exists environmentally, can cause degradation of organic materials and fatally affect the memory operation of organic‐based RRAMs. Therefore, resolving issues such as degradation of the electrical performance of organic‐based RRAMs due to external moisture is important prior to implementation in skin‐attachable wearable devices.…”

Section: Introductionmentioning

confidence: 99%

Flexible and Waterproof Resistive Random‐Access Memory Based on Nitrocellulose for Skin‐Attachable Wearable Devices

Lee

Park

et al. 2019

Adv Funct Materials

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Memory for skin-attachable wearable devices for healthcare monitoring must meet a number of requirements, including flexibility and stability in external environments. Among various memory technologies, organic-based resistive random-access memory (RRAM) devices are an attractive candidate for skin-attachable wearable devices due to the high flexibility of organic materials. However, organic-based RRAMs are particularly vulnerable to external moisture, making them difficult to apply as skin-attachable wearable devices. In this research, RRAMs are fabricated that meet the requirements for skinattachable wearable devices using a novel organic material, nitrocellulose (NC), which is biocompatible with high water-resistance and high flexibility. The fabricated NC-based RRAMs show a stable bipolar resistive switching characteristic. In addition, the formation of a native Al oxide between Al and NC is verified, which is the source of the bipolar switching characteristic of NC-based RRAMs. Furthermore, electrical and chemical analysis is conducted after dipping and submersion into various solutions as well as deionized water to confirm the water-resistance of the NC-based RRAMs. Finally, it is also confirmed that NC-based RRAMs are suitable for use in skin-attachable wearable devices through a flexibility test. In conclusion, this study suggests that NC-based RRAMs can be applied in skin-attachable wearable devices, simplifying healthcare in the future.

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“…Sol-gel techniques are used extensively for MO film growth, including films for high-performance TFTs (10)(11)(12)(13). However, the required sol-gel condensation, densification, and impurity removal steps typically require >400-500°C processing temperatures, which are incompatible with inexpensive glasses and typical flexible plastic substrates (14).…”

mentioning

confidence: 99%

Spray-combustion synthesis: Efficient solution route to high-performance oxide transistors

Smith²,

Zhou

et al. 2015

Proc. Natl. Acad. Sci. U.S.A.

181

186

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Metal-oxide (MO) semiconductors have emerged as enabling materials for next generation thin-film electronics owing to their high carrier mobilities, even in the amorphous state, large-area uniformity, low cost, and optical transparency, which are applicable to flat-panel displays, flexible circuitry, and photovoltaic cells. Impressive progress in solution-processed MO electronics has been achieved using methodologies such as sol gel, deep-UV irradiation, preformed nanostructures, and combustion synthesis. Nevertheless, because of incomplete lattice condensation and film densification, high-quality solution-processed MO films having technologically relevant thicknesses achievable in a single step have yet to be shown. Here, we report a low-temperature, thickness-controlled coating process to create high-performance, solution-processed MO electronics: spray-combustion synthesis (SCS). We also report for the first time, to our knowledge, indium-gallium-zinc-oxide (IGZO) transistors having densification, nanoporosity, electron mobility, trap densities, bias stability, and film transport approaching those of sputtered films and compatible with conventional fabrication (FAB) operations. etal-oxide (MO) semiconductors, especially in amorphous phases, represent an appealing materials family for next generation electronics owing to their high carrier mobilities, good environmental/thermal stability, mechanical flexibility, and excellent optical transparency (1-3). MO films complement organic semiconductors (4, 5), carbon/oxide nanomaterials (6), and flexible silicon (7, 8) for enabling new technologies, such as flexible displays and printed sensors. For fabricating high-performance electronics with acceptable fidelity, conventional processes require capital-intensive physical/chemical vapor deposition techniques. Capitalizing on the solubility of MO precursors in common solvents, solution methods have been used to fabricate semiconducting MO layers for thin-film transistors (TFTs). However, the fabrication process and field-effect mobilities of these TFTs are not competitive with the corresponding vapor-deposited (e.g., sputtered) devices (9), and developing routes to solution-derived MO TFTs with technologically relevant thicknesses and performance comparable to state of the art vapor-deposited devices is a critical milestone for MO electronics evolution.Sol-gel techniques are used extensively for MO film growth, including films for high-performance TFTs (10-13). However, the required sol-gel condensation, densification, and impurity removal steps typically require >400-500°C processing temperatures, which are incompatible with inexpensive glasses and typical flexible plastic substrates (14). Progress toward significantly reducing the processing temperatures of sol gel-derived MO films has afforded excellent TFT mobilities; however, achieving both reproducible high-performance and stable device operation remains an unsolved issue for Ga-containing materials (15). Sol-gel on-a-chip for indium-zinc-oxide (3) and deep-UV ...

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Characteristics of gravure printed InGaZnO thin films as an active channel layer in thin film transistors

Cited by 51 publications

References 20 publications

Flexography‐Printed In₂O₃ Semiconductor Layers for High‐Mobility Thin‐Film Transistors on Flexible Plastic Substrate

Flexography‐Printed In₂O₃ Semiconductor Layers for High‐Mobility Thin‐Film Transistors on Flexible Plastic Substrate

Flexible and Waterproof Resistive Random‐Access Memory Based on Nitrocellulose for Skin‐Attachable Wearable Devices

Spray-combustion synthesis: Efficient solution route to high-performance oxide transistors

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Characteristics of gravure printed InGaZnO thin films as an active channel layer in thin film transistors

Cited by 51 publications

References 20 publications

Flexography‐Printed In2O3 Semiconductor Layers for High‐Mobility Thin‐Film Transistors on Flexible Plastic Substrate

Flexography‐Printed In2O3 Semiconductor Layers for High‐Mobility Thin‐Film Transistors on Flexible Plastic Substrate

Flexible and Waterproof Resistive Random‐Access Memory Based on Nitrocellulose for Skin‐Attachable Wearable Devices

Spray-combustion synthesis: Efficient solution route to high-performance oxide transistors

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Product

Resources

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Flexography‐Printed In₂O₃ Semiconductor Layers for High‐Mobility Thin‐Film Transistors on Flexible Plastic Substrate

Flexography‐Printed In₂O₃ Semiconductor Layers for High‐Mobility Thin‐Film Transistors on Flexible Plastic Substrate