Characteristics of Hf-silicate Interfacial Layers Formed by WetEtching

Park, Jae Kyoung; Lee, Eul Taek; Kim, Byoung Kyun; Jeong, Seonghun; Roh, Yonghan

doi:10.3938/jkps.55.1022

Cited by 4 publications

(2 citation statements)

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“…31 The Si 2p peak at BE 102.4 eV in the control sample is from the HfSiO x interface layer. 11,32 The nc-CdSe embedded sample has an additional Si peak at BE 103.1 eV, which is from the SiO 2 -like HfSiO x group. 11 It was reported that the Hf dangling bond can be formed during the high temperature PDA process.…”

Section: Methodsmentioning

confidence: 99%

Memory functions of nanocrystalline cadmium selenide embedded ZrHfO high-k dielectric stack

Lin

Kuo

2014

Journal of Applied Physics

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Metal-oxide-semiconductor capacitors made of the nanocrystalline cadmium selenide nc-CdSe embedded Zr-doped HfO2 high-k stack on the p-type silicon wafer have been fabricated and studied for their charge trapping, detrapping, and retention characteristics. Both holes and electrons can be trapped to the nanocrystal-embedded dielectric stack depending on the polarity of the applied gate voltage. With the same magnitude of applied gate voltage, the sample can trap more holes than electrons. A small amount of holes are loosely trapped at the nc-CdSe/high-k interface and the remaining holes are strongly trapped to the bulk nanocrystalline CdSe site. Charges trapped to the nanocrystals caused the Coulomb blockade effect in the leakage current vs. voltage curve, which is not observed in the control sample. The addition of the nanocrystals to the dielectric film changed the defect density and the physical thickness, which are reflected on the leakage current and the breakdown voltage. More than half of the originally trapped holes can be retained in the embedded nanocrystals for more than 10 yr. The nanocrystalline CdSe embedded high-k stack is a useful gate dielectric for this nonvolatile memory device.

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Section: Methodsmentioning

confidence: 99%

Memory functions of nanocrystalline cadmium selenide embedded ZrHfO high-k dielectric stack

Lin

Kuo

2014

Journal of Applied Physics

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“…Early work on alternative gate dielectrics was focused on TiO 2 , Ta 2 O 5 , and BaSrTiO 3 , which were inherited from dynamic random access memory (DRAM) capacitor dielectric research [57][58][59][60]. Recently, Hf(Zr)-based oxides, including HfO 2 , ZrO 2 , and their silicates have emerged as promising candidates for high-k dielectrics because of their excellent thermal stability with Si [7,11,[61][62][63][64][65][66]. Furthermore, the mobility of CMOS devices using Hfbased high-k gate dielectrics has been improved significantly [67], almost matching that of nitride oxide at an EOT of $1 nm.…”

Section: Advance and Challenge In Current High-k Dielectric Developmentmentioning

confidence: 99%

Integrations and challenges of novel high-k gate stacks in advanced CMOS technology

Zhu

Sun

et al. 2011

Progress in Materials Science

136

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Investigating the Chemical Reactivity of Lithium Silicate Model SEI Layers

et al. 2020

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Silicon anodes suffer from an unstable solid electrolyte interphase (SEI) layer that contributes to undesirable capacity fade with cycling. A key part to addressing this unstable SEI formation is to examine how certain components of the SEI react with the electrolyte over time. One SEI component that has not been thoroughly studied in the context of the chemical reactivity against the electrolyte is lithiated silicate. Four model silicate thin films with increasing lithium content were deposited by radio frequency (RF) magnetron sputtering to study how the lithiation of the native oxide on a silicon anode affects the chemical stability of the anode surface.

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Characteristics of Hf-silicate Interfacial Layers Formed by WetEtching

Cited by 4 publications

References 0 publications

Memory functions of nanocrystalline cadmium selenide embedded ZrHfO high-k dielectric stack

Memory functions of nanocrystalline cadmium selenide embedded ZrHfO high-k dielectric stack

Integrations and challenges of novel high-k gate stacks in advanced CMOS technology

Investigating the Chemical Reactivity of Lithium Silicate Model SEI Layers

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