Characteristics of HfO2 thin films grown by plasma atomic layer deposition

Kim, Jin-Woo; Kim, Seokhoon; Jeon, Hyeongtag; Cho, M.-H.; Chung, Kwang-Hwa; Bae, Chong Woo

doi:10.1063/1.2005370

Cited by 60 publications

(51 citation statements)

References 10 publications

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“…The influence of ion bombardment was illustrated by a study in which the material properties of HfO 2 films deposited in a remote plasma and a direct plasma reactor were compared. 124,125 The films deposited in the remote plasma reactor were amorphous, but showed better interface properties than the polycrystalline HfO 2 films deposited in the direct plasma reactor (also see Sec. VIb).…”

Section: Challenges Of Plasma-assisted Aldmentioning

confidence: 99%

“…17). 123,125 In addition to better dielectric properties, MOSFET devices that were prepared using remote-plasma ALD HfO 2 showed better interface properties and a lower fixed oxide charge density. The difference in material properties was attributed to the increased physical reactivity of the direct plasma, in terms of ion bombardment (see Sec.…”

Section: High-k Dielectric Layersmentioning

confidence: 99%

“…Cross-sectional high-resolution transmission electron microscopy (HRTEM) images of as-grown HfO 2 films deposited by (a) remote-plasma ALD and (b) direct-plasma ALD (Refs. 124,125). The films were deposited on Si at a deposition temperature of 250 C using Hf(NEt 2 ) 4 as the precursor and an O 2 plasma as the reactant.…”

Section: Spacer-defined Double Patterningmentioning

confidence: 99%

See 2 more Smart Citations

Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges

Profijt

Potts

Sanden

et al. 2011

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

741

537

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Plasma-assisted atomic layer deposition (ALD) is an energy-enhanced method for the synthesis of ultra-thin films with Å-level resolution in which a plasma is employed during one step of the cyclic deposition process. The use of plasma species as reactants allows for more freedom in processing conditions and for a wider range of material properties compared with the conventional thermally-driven ALD method. Due to the continuous miniaturization in the microelectronics industry and the increasing relevance of ultra-thin films in many other applications, the deposition method has rapidly gained popularity in recent years, as is apparent from the increased number of articles published on the topic and plasma-assisted ALD reactors installed. To address the main differences between plasma-assisted ALD and thermal ALD, some basic aspects related to processing plasmas are presented in this review article. The plasma species and their role in the surface chemistry are addressed and different equipment configurations, including radical-enhanced ALD, direct plasma ALD, and remote plasma ALD, are described. The benefits and challenges provided by the use of a plasma step are presented and it is shown that the use of a plasma leads to a wider choice in material properties, substrate temperature, choice of precursors, and processing conditions, but that the processing can also be compromised by reduced film conformality and plasma damage. Finally, several reported emerging applications of plasma-assisted ALD are reviewed. It is expected that the merits offered by plasma-assisted ALD will further increase the interest of equipment manufacturers for developing industrial-scale deposition configurations such that the method will find its use in several manufacturing applications.

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Section: Challenges Of Plasma-assisted Aldmentioning

confidence: 99%

Section: High-k Dielectric Layersmentioning

confidence: 99%

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Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges

Profijt

Potts

Sanden

et al. 2011

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

741

537

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“…The FlexAL TM reactor employs a remote plasma source that generates plasma species remotely from the substrate, preventing severe ion bombardment and therefore the plasma damage that has been reported for direct plasma ALD (2,3).…”

Section: Introductionmentioning

confidence: 99%

Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor

Hodson

Singh²,

Heil

et al. 2007

ECS Trans.

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Hafnium oxide films deposited on silicon wafers from TEMAH and O 2 plasma showed saturation at growth rate per cycle of 1.1Å, which was independent of the plasma conditions. The same film deposited thermally using H 2 O as the oxidant saturated at 0.8Å/cycle. By varying the plasma exposure time the compositional ratio of [O]/[Hf], as calculated from RBS measurements, changed from 2.0 to 2.13. The carbon content in plasma HfO 2 films was < 2% compared to 8% in thermal HfO 2 films.Titanium nitride films deposited on silicon wafers from TiCl 4 and N 2 / H 2 plasma showed saturation at 0.33Å/cycle, which was independent of plasma conditions and a resistivity of <170µΩ cm at 350°C deposition temperature. The stoichiometry of the films can be changed from being slightly nitrogen rich to titanium rich by varying the N:H ratios in the plasma and limiting the amount of nitrogen available for the reaction. The chlorine impurity in TiN varied according to plasma exposure time (2.6% to 1.2%) and N 2 :H 2 gas ratio in the plasma, with a corresponding change in resistivity (200µΩ -150µΩ).

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“…Copyright (2007) American Institute of Physics highest performance MOS transistors. While ALD films are commonly grown at moderate substrate temperature (>300 C), introduction of new precursor chemistry [59] and plasmaassist [60] have reduced the need for high substrate temperature, making ALD relevant to plastic substrates. Figure 11.19 illustrates the sequential process for growing Al 2 O 3 by ALD.…”

Section: Gate Dielectrics Grown By Atomic Layer Depositionmentioning

confidence: 99%

Application of Transparent Oxide Semiconductors for Flexible Electronics

Carcia

2010

Transparent Electronics

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Electronics on flexible plastic substrates [1,2] are attractive for portable applications, because plastic is lighter weight, thinner, bendable, and more rugged than glass. Flexible plastic substrates can also be processed reel-to-reel, which should reduce manufacturing cost. Some applications envisioned for flexible electronics include (rollable) displays [3], low cost radio frequency identification (RFID) tags [4], and large area or macroelectronics [5], in general.Plastic substrates, however, are temperature sensitive. Common, inexpensive, plastic substrates, such as poly(ethylene terephthalate) (e.g. PET-Mylar Ò ), can withstand processing only up to $100 C, while poly(ethylene naphthalate) (PEN), in the same polyester family, can be used up to $200 C. (More detail about plastic substrates will be given later in this chapter). However, low mobility ($1 cm 2 V À1 s À1 ), amorphous silicon (a-Si) device technology [6,7], used in liquid crystal displays (LCDs) [8] for laptop computers and large screen flat-panel TVs, requires processing up to 350 C. Moreover, higher performance electronics, based on high mobility ($100 cm 2 V À1 s À1 ) polycrystalline Si technology [6,9], which drives newer organic light emitting displays (OLEDs) [10], require still higher process temperatures, $600 C. (A high mobility translates into a higher output current, and lower voltage and higher frequency operation). However, post-annealing processes used in Transparent Electronics: From Synthesis to Applications Edited by Antonio Facchetti and Tobin J. Marks

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Characteristics of HfO2 thin films grown by plasma atomic layer deposition

Cited by 60 publications

References 10 publications

Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges

Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges

Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor

Application of Transparent Oxide Semiconductors for Flexible Electronics

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