Characteristics of InGaN laser diodes in the pure blue region

Nagahama, Shin–ichi; Yanamoto, Tomoya; Sano, Masahiko; Mukai, Takashi

doi:10.1063/1.1399011

Cited by 52 publications

(39 citation statements)

References 19 publications

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“…They are commonly used in optoelectronic devices, such as high brightness light-emitting diodes 2 (LEDs) and low wavelength laser diodes 3 (LDs), as well as high power/high frequency electronic devices 4,5 . Recently InN thin films grown by MOCVD and MBE were found to have a bandgap energy in the range of 0.7-0.9 eV [6][7][8] , much lower than the value of ~1.9 eV found for InN films grown by sputtering 9 .…”

Section: MC Johnson Et Al Applied Physics Lettersmentioning

confidence: 99%

Growth and morphology of 0.80eV photoemitting indium nitride nanowires

Johnson

Lee

Bourret-Courchesne

et al. 2004

Applied Physics Letters

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InN nanowires with high efficiency photoluminescence emission at 0.80 eV are reported for the first time. InN nanowires were synthesized via a vapor solid growth mechanism from high purity indium metal and ammonia. The products consist of only hexagonal wurtzite phase InN. Scanning electron microscopy showed wires with diameters of 50-100nm and having fairly smooth morphologies. High-resolution transmission electron microscopy revealed high quality, single crystal InN nanowires which grew in the <0001> direction. 2 M.C. Johnson et. al. Applied Physics LettersThe group-III nitrides have become an extremely important technological material over the past decade 1 HRTEM study unravels more detailed structural and morphological information. More importantly, the emission was extremely intense relative to the amount of material produced and the low incident laser power used (9mW) although a quantum efficiency cannot be determined from these measurements at this time. The PL emission from these nanowires was compared to high quality material thin films grown using MetalorganicChemical Vapor Deposition (MOCVD) 12 as shown in Figure 4. It is clear that these single crystalline nanowires have a very similar emission spectrum but with a narrower full width at half maximum (FWHM) indicating a higher quality material. Additionally, the peak emission is red-shifted by 30 meV which indicates a lower bandgap energy than the thin film.These PL results show the possibility of determining fundamental properties of InN from nanosize material eliminating many of the dislocations and impurities inherent to thin film materials. More detailed studies of the optical and transport properties of these InN nanowires are being investigated.In conclusion, we have developed a simple and reproducible method by which we can

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Section: MC Johnson Et Al Applied Physics Lettersmentioning

confidence: 99%

Growth and morphology of 0.80eV photoemitting indium nitride nanowires

Johnson

Lee

Bourret-Courchesne

et al. 2004

Applied Physics Letters

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“…[1][2][3] More recently, the huge conduction band discontinuity of nearly 2 eV between these two semiconductors has resulted in some device proposals based on intersubband transitions. [4][5][6] Particularly interesting in this context are photodetectors, modulators, or lasers in the technologically interesting 1.55 m wavelength range.…”

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confidence: 99%

Tunneling effects and intersubband absorption in AlN/GaN superlattices

Baumann

Giorgetta

Hofstetter

et al. 2005

Applied Physics Letters

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We report on intersubband absorption and photovoltage measurements on regular GaN/AlN-based superlattice structures. For barrier thicknesses larger than about 25 Å, the optical intersubband absorption peaks at a considerably smaller energy than the photovoltage spectrum. A simple model taking into account the oscillator strength of the involved transitions and the corresponding tunneling probabilities agrees with the experimental findings. According to this model, the observed photovoltage is the macroscopic manifestation that the two-dimensional electron gas at the top of the superlattice changes its carrier density by a vertical transport of electrons.Thanks to their large band gap energies, the semiconductor materials GaN and AlN have attracted a lot of attention for the fabrication of long-lived visible lasers and lightemitting diodes. 1-3 More recently, the huge conduction band discontinuity of nearly 2 eV between these two semiconductors has resulted in some device proposals based on intersubband transitions. [4][5][6] Particularly interesting in this context are photodetectors, modulators, or lasers in the technologically interesting 1.55 m wavelength range. Such devices could profit from short intersubband lifetimes, which might eventually result in high operating frequencies. 7,8 Unfortunately, the heavy effective masses of 0.2 m e for GaN and 0.32 m e for AlN impose the epitaxial growth of layer thicknesses in the 15-30 Å range, which, despite substantial progress in molecular beam epitaxy, is still quite a challenging task. 9

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“…1 Introduction Gallium nitride (GaN) and III-nitrides are very promising materials for the fabrication of optoelectronic devices [1] and high power and high temperature electronic devices [2,3]. Commercial short wavelength light emitting diodes (LEDs) as well as laser diodes (LDs), field effect transistors (FETs), and ultraviolet (UV) detectors are being developed [4,5].…”

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confidence: 99%

Deep levels in high resistivity GaN epilayers grown by MOCVD

Fang

Wang

et al. 2006

Phys. Status Solidi (c)

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PACS 71.55.Eq, 81.15.Gh Undoped high resistivity (HR) GaN epilayers were grown on (0001) sapphire substrate by metalorganic chemical vapor deposition (MOCVD). Thermally stimulated current (TSC) and resistivity measurements have been carried out to investigate deep level traps. Deep levels with activation energies of 1.06eV and 0.85eV were measured in sample 1. Gaussian fitting of TSC spectra showed five deep levels in different samples.

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Characteristics of InGaN laser diodes in the pure blue region

Cited by 52 publications

References 19 publications

Growth and morphology of 0.80eV photoemitting indium nitride nanowires

Growth and morphology of 0.80eV photoemitting indium nitride nanowires

Tunneling effects and intersubband absorption in AlN/GaN superlattices

Deep levels in high resistivity GaN epilayers grown by MOCVD

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