Characteristics of InN thin films grown using a PAMBE technique

Kinsey, Robert J.; Anderson, P. A.; Kendrick, Chito; Reeves, Roger J.; Durbin, Steven M.

doi:10.1016/j.jcrysgro.2004.05.046

Cited by 13 publications

(8 citation statements)

References 15 publications

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“…This hypothesis is supported by XRD measurements which show that a significant amount of the Cr is incorporating interstitially. 25 InN luminesces brightly near 0.7 eV, which is now generally believed to reflect a band-gap energy of comparable value. Consistent with the degradation of the RHEED patterns, the Hall mobility decreased with increasing Cr content, from 250 cm 2 / V s for x=0, to 35 cm 2 / V s for x=0.04.…”

Section: Resultsmentioning

confidence: 94%

Magnetic and optical properties of the InCrN system

Anderson

Kinsey

Durbin

et al. 2005

Journal of Applied Physics

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Room-temperature ferromagnetic In 1−x Cr x N films with x ranging from 0.0005 to 0.04 and antiferromagnetic CrN films have been grown by plasma-assisted molecular-beam epitaxy. Electron and x-ray-diffraction techniques could find no evidence for precipitates or phase segregation within the films. Ferromagnetism was observed in the In 1−x Cr x N layers over a wide range of Cr concentrations, with the magnitude of the ferromagnetism found to correlate with the background carrier concentration. Higher n-type carrier concentrations were found to lead enhanced ferromagnetism, with maximum saturation and remnant moments of 7 and 0.7 emu/ cm 3 , respectively. The addition of Cr to the InN matrix led to reduced photoluminescence intensity and a shift of the peak to higher energy. These observations along with a band-gap-like optical transmission feature at 0.7 eV suggest that CrN has an indirect gap of approximately 0.7 eV and a direct ⌫-valley gap greater than 1.2 eV.

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Section: Resultsmentioning

confidence: 94%

Magnetic and optical properties of the InCrN system

Anderson

Kinsey

Durbin

et al. 2005

Journal of Applied Physics

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“…Those polycrystalline or nanocrystalline films often had high electron densities and low mobilities, although low-density high-mobility samples were also reported. Those results were confirmed by absorption and luminescence measurements on many samples grown by different groups [159,[191][192][193][194][195][196][197][198][199][200][201][202][203][204][205][206][207]. In 2001, however, optical characterizations of MBEgrown single-crystal InN indicated E g ≈ 0.7 eV [185][186][187][188][189][190], which represented a dramatic re-evaluation.…”

Section: Innmentioning

confidence: 84%

Electron Bandstructure Parameters

Vurgaftman

Meyer

2007

Nitride Semiconductor Devices: Principles and Simulation

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Fig. 2.1Recommended energy gaps of wurtzite nitride semiconductor alloys (lines) and binaries (points) vs. lattice constant. Band Structure Models 15The spin-degenerate conduction band is described by the anisotropic, parabolic form with wavefunctions comprised of the s-orbital (angular momentum l = 0) states:where k * , k * z are the wavevectors and m * , m * ⊥ are the effective masses along the in-plane and c-axis ([0001]) directions, respectively, a c1 and a c2 are the conduction-band deformation potentials, and ε ij are the strain tensor components. In the following, we cite the interband deformation potentials a 1 and a 2 , from which a c1 and a c2 may be obtained by subtracting the hydrostatic shift in the valence band, as determined by the D parameters in Eq. (2.5). The anisotropy is a distinguishing feature of the hexagonal crystal structure. Since the crystal-field and spin-orbit splittings in wurtzite nitride materials are rather small, the momentum matrix element E P and the F parameter are related to the effective mass and energy gap via:

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“…The growth rate is almost a constant being 1.5 mm/h, which is about 2-3 times faster than the conventional molecular beam epitaxy (MBE) technique at around 470 1C with a growth rate $0.6 mm/h and plasma-assistant molecular beam epitaxy (PAMBE). [15,16] However, the growth rate is still lower than that of InN grown by MOCVD. [17] It is usually thought that the growth rate increases with increasing precursors supply in the III-V material.…”

Section: Resultsmentioning

confidence: 99%