Characteristics of InP/InGaAs pnp heterostructure-emitter bipolar transistor (HEBT)

Tsai, Jung‐Hui; Guo, Der-Feng; Kang, Yu-Chi; Weng, Tzu-Yen

doi:10.1088/0031-8949/2007/t129/065

Cited by 1 publication

(1 citation statement)

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“…It is a direct band gap semiconductor of the III–V family with a sphalerite structure, making it a suitable choice for creating short-wavelength infrared detectors [ 1 , 2 , 3 , 4 ]. Because of its excellent characteristics and mature preparation technology, In x Ga 1−x As materials have attracted much research attention and have been widely used in the fields of civil, military, space remote sensing, spectroscopy, and so on [ 5 , 6 , 7 , 8 ]. The future is bright for structures and devices based on InP material systems because of their higher integration, higher frequency, higher power, higher power efficiency, lower noise, and lower cost.…”

Section: Introductionmentioning

confidence: 99%

The Effect of Buffer Types on the In0.82Ga0.18As Epitaxial Layer Grown on an InP (100) Substrate

et al. 2018

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In0.82Ga0.18As epitaxial layers were grown on InP (100) substrates at 530 °C by a low-pressure metalorganic chemical vapor deposition (LP-MOCVD) technique. The effects of different buffer structures, such as a single buffer layer, compositionally graded buffer layers, and superlattice buffer layers, on the crystalline quality and property were investigated. Double-crystal X-ray diffraction (DC-XRD) measurement, Raman scattering spectrum, and Hall measurements were used to evaluate the crystalline quality and electrical property. Scanning electron microscope (SEM), atomic force microscope (AFM), and transmission electron microscope (TEM) were used to characterize the surface morphology and microstructure, respectively. Compared with the In0.82Ga0.18As epitaxial layer directly grown on an InP substrate, the quality of the sample is not obviously improved by using a single In0.82Ga0.18As buffer layer. By introducing the graded InxGa1−xAs buffer layers, it was found that the dislocation density in the epitaxial layer significantly decreased and the surface quality improved remarkably. In addition, the number of dislocations in the epitaxial layer greatly decreased under the combined action of multi-potential wells and potential barriers by the introduction of a In0.82Ga0.18As/In0.82Al0.18As superlattice buffer. However, the surface subsequently roughened, which may be explained by surface undulation.

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