Characteristics of Interlayer Tunneling Field-Effect Transistors Computed by a “DFT-Bardeen” Method

Li, Jun; Nie, Yifan; Cho, Kyeongjae; Feenstra, R. M.

doi:10.1007/s11664-016-5120-2

Cited by 5 publications

(24 citation statements)

References 40 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…11,12,13,17,21,22,23 The thin barriers yield large tunnel currents, as desirable for useful electronic devices. However, associated with the large currents, the effects of contact resistance can become quite significant.…”

Section: Discussionmentioning

confidence: 99%

“…Details of our computational method have been presented previously. 17 As an introduction to the Bardeen method, 30,31,32 we show in Fig. 2 a schematic illustration for comparing tunneling between sheets of 2D materials, as might be computed in an exact (or a non-equilibrium Green's function, NEGF) theory as compared with 33 a Bardeen method.…”

Section: Methodsmentioning

confidence: 99%

“…We have argued previously that a useful model for evaluating the surface integral is to restrict it to a phase coherent area for the wave functions in the respective electrodes, with extent given by a phase coherence length L. 6,17,26 Our method actually employs a distribution of such lengths, centered on the value L, following the methodology of Britnell et al 3 For the treatment of the electrostatics of the tunneling device we employ a method that is more approximate than that of Ref. [17] but nonetheless adequate for the present purposes. That is, we neglect any role of gate electrodes on either side of the source and drain and we furthermore neglect the role of the capacitance between the graphene source and drain electrodes.…”

Section: Methodsmentioning

confidence: 99%

“…with only a van der Waals gap separating source and drain). 11,12,13,17,21,22,23 Relatively high current levels for the on state of the devices are obtained. However, as mentioned above, experimental confirmation of these tunnel current magnitudes is lacking.…”

Section: Introductionmentioning

confidence: 98%

“…14,15,16 Nevertheless, it is important to consider the TMD-based devices, since they offer a wider range of operating modes with potential application in electronic circuits and systems. 17 Specifically, the TMD-based interlayer tunneling devices can be utilized for 2D-2D tunneling, just as for G/h-BN/G, and sharp resonant peaks exhibiting NDR are expected (though not yet experimentally observed). 18 In this mode, the tunneling occurs between like bands, that is, from conduction band (CB) of one electrode to CB of the other and/or from valence band (VB) of one electrode to VB of the other.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Magnitude of the current in 2D interlayer tunneling devices

Feenstra

Barrera

et al. 2018

J. Phys.: Condens. Matter

Self Cite

View full text Add to dashboard Cite

Abstract:Using the Bardeen tunneling method with first-principles wave functions, computations are made of the tunneling current in graphene / hexagonal-boron-nitride / graphene (G/h-BN/G) vertical structures. Detailed comparison with prior experimental results is made, focusing on the magnitude of the achievable tunnel current. With inclusion of the effects of translational and rotational misalignment of the graphene and the h-BN, predicted currents are found to be about 15 larger than experimental values. A reduction in this discrepancy, to a factor of 2.5, is achieved by utilizing a realistic size for the band gap of the h-BN, hence affecting the exponential decay constant for the tunneling.

show abstract

Section: Discussionmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Magnitude of the current in 2D interlayer tunneling devices

Feenstra

Barrera

et al. 2018

J. Phys.: Condens. Matter

Self Cite

View full text Add to dashboard Cite

show abstract

Quantum-Confined Electronic States Arising from the Moiré Pattern of MoS₂–WSe₂ Heterobilayers

et al. 2018

Self Cite

View full text Add to dashboard Cite

A two-dimensional (2D) heterobilayer system consisting of MoS on WSe, deposited on epitaxial graphene, is studied by scanning tunneling microscopy and spectroscopy at temperatures of 5 and 80 K. A moiré pattern is observed, arising from lattice mismatch of 3.7% between the MoS and WSe. Significant energy shifts are observed in tunneling spectra observed at the maxima of the moiré corrugation, as compared with spectra obtained at corrugation minima, consistent with prior work. Furthermore, at the minima of the moiré corrugation, sharp peaks in the spectra at energies near the band edges are observed for spectra acquired at 5 K. The peaks correspond to discrete states that are confined within the moiré unit cells. Conductance mapping is employed to reveal the detailed structure of the wave functions of the states. For measurements at 80 K, the sharp peaks in the spectra are absent, and conductance maps of the band edges reveal little structure.

show abstract

Influence of Proximity to Supporting Substrate on van der Waals Epitaxy of Atomically Thin Graphene/Hexagonal Boron Nitride Heterostructures

Heilmann

Prikhodko

Hanke

et al. 2020

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

Combining graphene and the insulating hexagonal boron nitride (h-BN) into two-dimensional heterostructures is promising for novel, atomically thin electronic nanodevices. A heteroepitaxial growth, in which these materials are grown on top of each other, will be crucial for their scalable device integration. However, during this so-called van der Waals epitaxy, not only the atomically thin substrate itself must be considered but also the influences from the supporting substrate below it. Here, we report not only a substantial difference between the formation of h-BN on single- (SLG) and on bi-layer epitaxial graphene (BLG) on SiC, but also vice versa, that the van der Waals epitaxy of h-BN at growth temperatures well below 1000 °C affects the varying number of graphene layers differently. Our results clearly demonstrate that the additional graphene layer in BLG enhances the distance to the corrugated, carbon-rich interface of the supporting SiC substrate and thereby diminishes its influence on the van der Waals epitaxy, leading to a homogeneous formation of a smooth, atomically thin heterostructure, which will be required for a scalable device integration of 2D heterostructures.

show abstract

Characteristics of Interlayer Tunneling Field-Effect Transistors Computed by a “DFT-Bardeen” Method

Cited by 5 publications

References 40 publications

Magnitude of the current in 2D interlayer tunneling devices

Magnitude of the current in 2D interlayer tunneling devices

Quantum-Confined Electronic States Arising from the Moiré Pattern of MoS₂–WSe₂ Heterobilayers

Influence of Proximity to Supporting Substrate on van der Waals Epitaxy of Atomically Thin Graphene/Hexagonal Boron Nitride Heterostructures

Contact Info

Product

Resources

About

Characteristics of Interlayer Tunneling Field-Effect Transistors Computed by a “DFT-Bardeen” Method

Cited by 5 publications

References 40 publications

Magnitude of the current in 2D interlayer tunneling devices

Magnitude of the current in 2D interlayer tunneling devices

Quantum-Confined Electronic States Arising from the Moiré Pattern of MoS2–WSe2 Heterobilayers

Influence of Proximity to Supporting Substrate on van der Waals Epitaxy of Atomically Thin Graphene/Hexagonal Boron Nitride Heterostructures

Contact Info

Product

Resources

About

Quantum-Confined Electronic States Arising from the Moiré Pattern of MoS₂–WSe₂ Heterobilayers