Characteristics of low-k SiOC(–H) films deposited at various substrate temperature by PECVD using DMDMS/O2 precursor

Kim, Chang Young; Kim, Seung Hyun; Navamathavan, R.; Choi, Chi Kyu; Jeung, Won Young

doi:10.1016/j.tsf.2007.06.097

Cited by 61 publications

(40 citation statements)

References 20 publications

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“…Si 2p X-ray photoelectron spectroscopy (XPS) spectrum of the composite indicates the existence of Si O C bond (101.9 eV) (Fig. 2C) [28,29,31]. The C 1s spectra imply the epoxy (286.8 eV) groups of GO are significantly decreased after the sol-gel process, verifying the reduction of GO (Fig.…”

Section: Preparation and Characteriazation Of Catalystsmentioning

confidence: 76%

Silica nanocrystal/graphene composite with improved photoelectric and photocatalytic performance

Yang

Wang

Xing

et al. 2016

Applied Catalysis B: Environmental

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Section: Preparation and Characteriazation Of Catalystsmentioning

confidence: 76%

Silica nanocrystal/graphene composite with improved photoelectric and photocatalytic performance

Yang

Wang

Xing

et al. 2016

Applied Catalysis B: Environmental

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“…[42] Through the fitting of the oxygen 1s electron orbital spectrum (Figure 4b), the doubly-(at 531.6 eV) and singly-bonded (533.0 eV) oxygens, the O À H bond from water (534.5 eV), and the Si À O bond (532.5 eV) were observed. [42,57] Evidence for Si À O À C bond formation was obtained from the fitting of the silicon 2p electron orbital spectrum (Figure 4c), which indicated the presence of SiO 2 ÀC 2 and SiO 3 ÀC bonds at 101.3 and 102.8 eV, respectively. [57] Si À O À C bond formation could not be verified by the XPS results for the silica-coated MWCNTs; only SiO 2 was seen (at 104.2 eV) due to the thickness of the silica shells in these samples.…”

mentioning

confidence: 99%

“…[42,57] Evidence for Si À O À C bond formation was obtained from the fitting of the silicon 2p electron orbital spectrum (Figure 4c), which indicated the presence of SiO 2 ÀC 2 and SiO 3 ÀC bonds at 101.3 and 102.8 eV, respectively. [57] Si À O À C bond formation could not be verified by the XPS results for the silica-coated MWCNTs; only SiO 2 was seen (at 104.2 eV) due to the thickness of the silica shells in these samples. In summary, the infrared, Raman, and XPS results provided evidence for the formation of SiÀOÀC bonds on the SWCNT surface.…”

mentioning

confidence: 99%

Surface Chemistry in the Process of Coating Mesoporous SiO₂ onto Carbon Nanotubes Driven by the Formation of SiOC Bonds

Paula

Stéfani

Filho

et al. 2011

Chemistry A European J

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The deposition of mesoporous silica (SiO(2)) on carbon nanotubes (CNTs) has opened up a wide range of assembling possibilities by exploiting the sidewall of CNTs and organosilane chemistry. The resulting systems may be suitable for applications in catalysis, energy conversion, environmental chemistry, and nanomedicine. However, to promote the condensation of silicon monomers on the nanotube without producing segregated particles, (OR)(4-x)SiO(x)(x-) units must undergo nucleophilic substitution by groups localized on the CNT sidewall during the transesterification reaction. In order to achieve this preferential attachment, we have deposited silica on oxidized carbon nanotubes (single-walled and multiwalled) in a sol-gel process that also involved the use of a soft template (cetyltrimethylammonium bromide, CTAB). In contrast to the simple approach normally used to describe the attachment of inorganic compounds on CNTs, SiO(2) nucleation on the tube is a result of nucleophilic attack mainly by hydroxyl radicals, localized in a very complex surface chemical environment, where various oxygenated groups are covalently bonded to the sidewall and carboxylated carbonaceous fragments (CCFs) are adsorbed on the tubes. Si-O-C covalent bond formation in the SiO(2)-CNT hybrids was observed even after removal of the CCFs with sodium hydroxide. By adding CTAB, and increasing the temperature, time, and initial amount of the catalyst (NH(4)OH) in the synthesis, the SiO(2) coating morphology could be changed from one of nanoparticles to mesoporous shells. Concomitantly, pore ordering was achieved by increasing the amount of CTAB. Furthermore, preferential attachment on the sidewall results mostly in CNTs with uncapped ends, having sites (carboxylic acids) that can be used for further localized reactions.

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“…17 In contrast to MIR-IR, XPS analyses ( Figure 2) of O 2 plasma treated low-k film cannot clearly resolve these changes, showing only broad overlapping C (1s) peaks that require peak fitting to extract C (1s) component of Si-CH 3 at 283.4 eV. 18,19 Figure 1b shows the trend of O 2 plasma induced carbon loss as detected by XPS measurements. After 220 sec of etching, only C (1s) signal near background level can be detected indicating the carbon depletion zone has moved beyond the probing depth of XPS (<10 nm).…”

Section: Resultsmentioning

confidence: 99%

Evaluation of Plasma Damage to Low-k Dielectric Trench Structures by Multiple Internal Reflection Infrared Spectroscopy

Rimal

Mukherjee

Abdelghani

et al. 2013

ECS Solid State Letters

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Plasma induced damage on a ∼68 nm low-k dielectric trench structure was evaluated and correlated to each plasma processing step using multiple internal reflection infrared spectroscopy (MIR-IR) complemented by XPS and SEM. The plasma stripping process causes significantly more Si-OH and C=O chemical bonding formation and breakage of Si-CH 3 bonds in porous low-k trench structure. Formation and removal of fluorocarbon post-etch residues can be monitored using the IR absorption band at 1530-1850 cm −1 . The Si-OH content provided by MIR-IR metrology can function as a sensitive and reliable quantitative metric for the rapid assessment of plasma induced dielectric damage.Plasma etch damage is the main cause of dielectric degradation of porous low-k materials during fabrication of advanced Cu/low-k interconnects. Highly energetic ions, reactive radicals and vacuum ultraviolet radiation generated during plasma etching have been shown to break Si-CH 3 bonds and form Si-OH (silanol) bonds on the top layer of organosilicate (SiOCH) glass low-k materials. 1 These surfaceanchored silanol groups readily adsorb water (ε ∼80) degrading the effectiveness of the low-k materials. Although electrical characterization (e.g. reliability and leakage current measurements) of fully processed interconnects can reveal dielectric degradation, these methods are costly and cannot pinpoint any particular process causing the damage. 2 Other characterization techniques can also yield information about plasma induced damage to low-k materials. 3-6 These methods, however, are most effective for blanket wafers. Thus, there is a pressing need for a convenient metrology to identify and quantify the damage on the side walls of dielectric trench structures from plasma processing such as photoresist stripping.In this study, we utilized multiple internal reflection infrared spectroscopy (MIR-IR) to monitor water adsorption, carbon stripping and post-etch residues during the formation of trench structures in low-k dielectric materials via plasma etch and strip processes. Fourier transform infrared spectroscopy (FTIR), a fast and non-contact metrology, can provide direct observation of water adsorption and the chemical bonding structure of blanket porous low-k dielectric materials. Recently, applications of FTIR to characterize patterned dielectric wafer were reported. 7-9 MIR-IR spectroscopy can increase detection sensitivity up to 100-fold compared with conventional FTIR because the wafer itself serves as an IR waveguide allowing for multiple detections. 10,11 In this work, a test pattern of ∼68 nm trenches with 128 nm pitch was created through oxide hard mask plasma etching followed by organic residue stripping. Damage to the dielectric in terms of silanol formation was quantified and correlated to each plasma processing step using MIR-IR complemented by X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM).

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Characteristics of low-k SiOC(–H) films deposited at various substrate temperature by PECVD using DMDMS/O2 precursor

Cited by 61 publications

References 20 publications

Silica nanocrystal/graphene composite with improved photoelectric and photocatalytic performance

Silica nanocrystal/graphene composite with improved photoelectric and photocatalytic performance

Surface Chemistry in the Process of Coating Mesoporous SiO₂ onto Carbon Nanotubes Driven by the Formation of SiOC Bonds

Evaluation of Plasma Damage to Low-k Dielectric Trench Structures by Multiple Internal Reflection Infrared Spectroscopy

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Characteristics of low-k SiOC(–H) films deposited at various substrate temperature by PECVD using DMDMS/O2 precursor

Cited by 61 publications

References 20 publications

Silica nanocrystal/graphene composite with improved photoelectric and photocatalytic performance

Silica nanocrystal/graphene composite with improved photoelectric and photocatalytic performance

Surface Chemistry in the Process of Coating Mesoporous SiO2 onto Carbon Nanotubes Driven by the Formation of SiOC Bonds

Evaluation of Plasma Damage to Low-k Dielectric Trench Structures by Multiple Internal Reflection Infrared Spectroscopy

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Surface Chemistry in the Process of Coating Mesoporous SiO₂ onto Carbon Nanotubes Driven by the Formation of SiOC Bonds