Characteristics of Metal–Semiconductor–Metal Ultraviolet Photodetectors Based on Pure ZnO/Amorphous IGZO Thin-Film Structures

Lam, Kin-Tak; Young, Sheng-Joue; Chu, Yen-Lin; Tsai, Chen‐Chu; Chu, Tung-Te; Lu, Ting-Sung; Ji, Liang‐Wen

doi:10.1155/2021/6649200

Cited by 9 publications

(6 citation statements)

References 25 publications

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“…As a result, the optic property of normal ZnO peak can be divided into two regions, such as the UV emission and green emission. [15][16][17] The UV emission is located in wavelength of 380 nm, which considers as from near band-edge emission or free-exciton. On the other hand, the green emission is centered in ∼580 nm, which indicated ZnO intrinsic defects or oxygen vacancies.…”

Section: Methodsmentioning

confidence: 99%

Improved pH-Sensing Characteristics by Pt Nanoparticle-Decorated ZnO Nanostructures

Chu

Young

Dai

et al. 2021

ECS J. Solid State Sci. Technol.

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In this article, the znic oxide (ZnO) nanorods (NRs) and Pt-nanoparticles (NPs) decorated on ZnO (Pt@ZnO) NRs based on extended-gate field-effect-transistor (EG-FET) sensor were prepared and expolred through a simple hydrothermal method (HTM) and a direct current (DC) magnetron sputtering system (0 and 30 s). The results showed that all crystals preferentially grew in the c-axis direction. The ZnO and Pt@ZnO pH sensors are also called ps-0 and ps-30. The Pt sheet as reference electrode was used to test the sensitivity and linearity of buffer solutions with various pH values. It was found that both of them revealed good linearity and sensitivity, and ps-30 sample showed notably enhanced sensing characteristic. As a result, the average current and voltage sensitivities of the ps-0 samples were 15.50 μA pH−1 and 28.95 mV pH−1, and linearity curves were 0.990 and 0.978, whereas that of the ps-30 samples were 47.82 μA pH−1 and 49.83 mV pH−1 with a linearity of 0.985 and 0.994, respectively. Furthermore, the ps-30 samples have superior output response voltage, which demonstrated that the devices will be extremely useful in pH-sensing applications.

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Section: Methodsmentioning

confidence: 99%

Improved pH-Sensing Characteristics by Pt Nanoparticle-Decorated ZnO Nanostructures

Chu

Young

Dai

et al. 2021

ECS J. Solid State Sci. Technol.

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“…In fact, pure ZnO-based UV-PDs were reported as early as the 1980s [122]. Lam et al [123], Hsiao et al [124] and Yang et al [125] have successfully fabricated pure ZnO UV-PDs, but with relatively poor photo/dark current ratios, which do not exceed 1000. The drawback of ZnO lies in its difficulty to achieve p-type doping as previously mentioned.…”

Section: Nitride-zno Heterojunction Uv-pdmentioning

confidence: 99%

Recent advances and prospects for a GaN-based hybrid type ultraviolet photodetector

Zhang,

Deng,

Xia

et al. 2024

Semicond. Sci. Technol.

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Solid-state UV photodetectors (PD) have received numerous attention because of the advantages of small size, absence of external cooling, high selectivity, and the ability to utilize the energy band structure semiconductor materials to achieve detection across various wavelengths. III-nitride thin films, as typical wide bandgap semiconductors with mature n-type and p-type doping capabilities, are ideal candidates for solid-state UV-PDs. However, a combination between III-nitride and other wide bandgap materials can either enrich the functionality of such devices such as spectrum-selective and broadband UV detection, or offers opportunities to enhance device performance, including high photoresponsivity, high external quantum efficiency, low dark current and fast response time. This topical review focuses on giving a thorough review of the III-nitride based hybrid-type UV photodetectors, their recent progress and future prospects. This review highlights different optical and electrical properties of various materials including GaN, Ga2O3, ZnO, perovskite etc. By carefully choosing the materials on two sides of the heterojunction and modulating the thickness and fermi levels and corresponding layers, p-i-n, Schottky, or MSM type photodetectors were successfully fabricated with outstanding device performances and novel spectral-selective properties. The advantages for future development of such hybrid-type PDs will be discussed, such as inherently formed p-n junction with large depletion region at the interface of two different materials, capability of bandgap engineering to tune the band offset of conduction band and valence band, thus enabling large barrier height for one type of carrier without influencing the other. The drawbacks in hybrid-type UV-PD due to poor interface quality and challenges in forming electrical contact in nanostructure hybrid UV-PD will also be discussed.

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“…Recently, many wide-band gap metal oxide semiconductor (MOS) materials, including zinc oxide (ZnO), nickel oxide (NiO), copper oxide (CuO), tin oxide (SnO 2 ), titanium dioxide (TiO 2 ), lead dioxide (PbO 2 ), ruthenium oxide (RuO 2 ), iridium dioxide (IrO 2 ), tungsten trioxide (WO 3 ), tantalum pentoxide (Ta 2 O 5 ), antimony trioxide (Sb 2 O 3 ), and indium oxide (In 2 O 3 ), have attracted considerable interest because of their special material performance in pH nanodevices. − Among them, the ZnO structure belongs to the II–VI groups of n-type MOS materials and has a large band gap of approximately 3.37 eV at room temperature and a high-exciton binding energy of about 60 meV. − ZnO MOS with crystal lattice constants of a = 0.3249 nm and c = 0.5207 nm is a hexagonal wurtzite system. It has many outstanding properties, such as low price, nontoxicity, remarkable thermochemical stability, excellent carrier mobility, good biocompatibility, and high mechanical strength. , One-dimensional (1-D) ZnO nanomaterials have been used in various electric components, such as pH sensors, gas sensors, ultraviolet photodetectors (UV PDs), nanogenerators (NGs), field-emission (FE) emitters, photocatalysts, light-emitting diodes (LEDs), glucose sensors, thin-film transistors (TFTs), and solar cells. − Up to now, many researchers have studied the preparation methods of ZnO nanorods (NRs), including thermal evaporation, hydrothermal methods, vapor–solid (VS), pulsed laser deposition (PLD), electrochemical deposition, and chemical vapor deposition (CVD). Among them, the hydrothermal method is also called the chemical bath deposition (CBD) method and has gradually become a mainstream method for preparing ZnO nanostructures.…”

Section: Introductionmentioning

confidence: 99%

High Sensitivity of Extended-Gate Field-Effect Transistors Based on 1-D ZnO:Ag Nanomaterials through a Cheap Photochemical Synthesis as pH Sensors at Room Temperature

Chu,

Young,

Tsai

et al. 2024

ACS Appl. Electron. Mater.

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We investigated an extended-gate field-effect transistor (EG-FET) as a pH sensor in this work. It was based on low-temperature hydrothermally grown one-dimensional (1-D) zinc oxide (ZnO) nanorod (NR) arrays. Additionally, silver nanoparticles (Ag NPs) were successfully synthesized on the surfaces of nanostructures through a simple photochemical synthesis process under ultraviolet (UV) light illumination at room temperature. The surface morphology, crystalline nature, elemental content, optical property, and electrical performance of both samples were explored and studied by field-emission scanning electron microscopy (FE-SEM), high-resolution transmission electron microscopy (HR-TEM), X-ray diffraction (XRD) system, energy-dispersive X-ray (EDX), X-ray photoelectron spectroscopy (XPS), photoluminescence (PL) spectrometer, UV−visible spectroscopy, and a Keithley 2410 semiconductor parameter analyzer with a personal computer. FE-SEM pictures, HR-TEM patterns, and XRD results indicated that the growth of all nanostructures preferentially oriented along the c-axis resulted in hexagonal wurtzite crystals, and the 1-D NRs grew vertically on the ZnO seed layer-coated substrate. The Z@Ag-1 samples were composed of Ag (2.64 atom %), Zn (58.17 atom %), and O (39.19 atom %) in the EDX result. HR-TEM elemental mappings, EDX images, and XPS spectra demonstrated that Ag NPs existed on the surface of the 1-D ZnO NR arrays. The optical characteristics of PL analysis and UV−visible spectroscopy showed two emissions, including UV and the visible region. In the electrical section, all pH sensors showed good pH stability properties and remarkable repeatability. After Ag NP decoration, the 1-D Z@Ag-1 samples exhibited superior pH-sensing response characteristics (59.06 mV/pH, 45.65 μA/pH) with good linearity (0.996, 0.998). Meanwhile, the hysteresis effect was only 1.49 mV as the pH of the solution changed in the following order: pH 7 → pH 4 → pH 7 → pH 10 → pH 7. The designed 1-D Z@Ag-1 pH sensors will be remarkably useful in pH-sensing fields and can be combined with Internet-of-Things applications, particularly in industrial, agricultural, medical, and military fields.

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Characteristics of Metal–Semiconductor–Metal Ultraviolet Photodetectors Based on Pure ZnO/Amorphous IGZO Thin-Film Structures

Cited by 9 publications

References 25 publications

Improved pH-Sensing Characteristics by Pt Nanoparticle-Decorated ZnO Nanostructures

Improved pH-Sensing Characteristics by Pt Nanoparticle-Decorated ZnO Nanostructures

Recent advances and prospects for a GaN-based hybrid type ultraviolet photodetector

High Sensitivity of Extended-Gate Field-Effect Transistors Based on 1-D ZnO:Ag Nanomaterials through a Cheap Photochemical Synthesis as pH Sensors at Room Temperature

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