Characteristics of Plasma-Treated Amorphous Ta-Si-C Film as a Diffusion Barrier for Copper Metallization

Fang, Jau–Shiung; Su, W.C.; Huang, Meng-Shuo; Chiu, Chin-Fu; Chin, Tsung‐Shune

doi:10.1007/s11664-013-2741-6

Cited by 6 publications

(1 citation statement)

References 16 publications

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“…Most are based on forming an interface between Cu and the barrier material and using techniques such as secondary ion mass spectroscopy (SIMS) or Rutherford backscattering to monitor for Cu in-diffusion into the barrier and ILD material, 265,266 or X-ray diffraction to detect Cu diffusion into the underlying Si substrate and formation of CuSi x . 267,268 Various electrical [269][270][271][272][273] and electrochemical 274,275 tests have also been reported in the literature for evaluating the Cu diffusion resistance of barrier materials. Based on these various methods, PECVD a-SiN:H has been shown to be an excellent Cu diffusion barrier.…”

Section: N3031mentioning

confidence: 99%

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

King

2014

ECS J. Solid State Sci. Technol.

133

115

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Over the past decade, the primary focus for improving the performance of nano-electronic metal interconnect structures has been to reduce the impact of resistance-capacitance (RC) delays via utilizing insulating dielectrics with ever lower values of dielectric permittivity. The integration and implementation of such low dielectric constant (i.e. low-k) materials has been fraught with numerous challenges. For intermetal and interlayer (ILD) low-k dielectrics, these challenges have been largely associated to integration with metal interconnect fabrication processes and well documented and reviewed in the literature. Although equally important, less attention has been given to other low-k dielectrics utilized in metal interconnect structures that are commonly referred to as low-k dielectric barriers (DB), etch stops (ES), and/or Cu capping layers (CCL). These materials present numerous challenges as well for integration into metal interconnect fabrication processes. However, they also have more stringent integrated functionality requirements relative to low-k ILD materials that serve only a basic purpose of electrically isolating adjacent metal lines. In this article, we review the integration challenges and associated integrated functionality requirements for low-k DB/ES/CCL materials with a focus on the current status and future direction needed for these materials to facilitate both Moore's law (i.e. More Moore) and More than Moore scaling.

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Section: N3031mentioning

confidence: 99%

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

King

2014

ECS J. Solid State Sci. Technol.

133

115

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Effect of Different Ni Contents on Thermal Stability of Cu(Ni) Alloy Film

Cheng

Asempah

et al. 2020

Journal of Elec Materi

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The effect of doping different contents of Ni on the thermal stability of Cu(Ni) alloy films has been investigated. Cu(Ni) films with different Ni contents were deposited on SiO 2 /Si substrates by magnetron sputtering, then annealed in vacuum at 350°C to 650°C for 0.5 h. X-ray diffraction analysis and resistance measurements revealed that high-resistance copper silicide was formed after annealing at 450°C for the Cu(Ni, 1.66 at.%) and Cu(Ni, 9.16 at.%) samples. However, no copper silicide was observed for Cu(Ni, 3.59 at.%) even after annealing at 650°C. Transmission electron microscopy provided evidence for a $ 25-nm self-formed barrier layer at the Cu/SiO 2 interface with Cu(Ni, 3.59 at.%). The failure to form a diffusion barrier for the Cu(Ni, 1.66 at.%) sample resulted from its low Ni doping concentration, which was insufficient to produce such a self-formed layer during annealing. The barrier failure was caused by grain refinement due to the increased Ni content, providing diffusion channels for atom diffusion. The results clearly suggest that addition of an appropriate amount of Ni can improve the thermal stability of Cu(Ni)/SiO 2 / Si interconnect structure materials.

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Self-propagating high-temperature synthesis of nanocomposite ceramics TaSi2-SiC with hierarchical structure and superior properties

Vorotilo

Левашов

Курбаткина

et al. 2018

Journal of the European Ceramic Society

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Characteristics of Plasma-Treated Amorphous Ta-Si-C Film as a Diffusion Barrier for Copper Metallization

Cited by 6 publications

References 16 publications

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects

Effect of Different Ni Contents on Thermal Stability of Cu(Ni) Alloy Film

Self-propagating high-temperature synthesis of nanocomposite ceramics TaSi2-SiC with hierarchical structure and superior properties

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