Characteristics of RF reactive sputter-deposited Pt/SiO2/n-InGaN MOS Schottky diodes

Tuan, Thi Tran Anh; Kuo, Dong‐Hau

doi:10.1016/j.mssp.2014.10.021

Cited by 31 publications

(19 citation statements)

References 26 publications

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“…From the I-V data, tested with a voltage range of (−6 V; +6 V) and a leakage current of −1 V, the turn-on voltage of the diode was determined to be ~4.49 × 10 −6 A/cm 2 and 2.3 V. Figure 3b shows the lnI-V semilogarithmic view of the diode. From the I-V data, tested with a voltage range of (−6 V; +6 V) and a leakage current of −1 V, the turn-on voltage of the diode was determined to be~4.49 × 10 −6 A/cm 2 and 2.3 V. According to the thermionic emission (TE) mode (for qV > 3 kT), the electrical properties of the Schottky diode can be described as [6,11,22]:…”

Section: Structural and Surface Morphological Characteristicsmentioning

confidence: 99%

“…Previous studies created the thin, high-quality insulator layer between the metal and semiconductor that is used to create a metal-oxide-semiconductor (MOS) structure, which was an important factor for the high-performance of MOS devices [6][7][8][9][10]. Researchers investigated the contact of MOS layers via various approaches, e.g., Al/HfO 2 /p-Si [7], Pt/oxide/n-InGaP [10], Pt/SiO 2 /n-InGaN [11], Pd/NiO/GaN [12], Au/SiO 2 /n-GaN [13], Au/SnO x /n-LTPS/glass [14], Pt/SiO 2 /n-GaN [6,15], Pt/Oxide/Al 0.3 Ga 0.7 As [16], Pd/HfO 2 /GaN [17], and Al/SnO 2 /p-Si (111) [18].…”

Section: Introductionmentioning

confidence: 99%

“…In this study, the radio-frequency (RF) reactive sputtering technique was used to design the Al/SiO 2 /p-GaN MOS Schottky diode because of advantages such as low deposition temperature, low cost, and safety [3,6,11]. With the support of the parameters and using the RF technique, our diode was fabricated below 400 • C. The characteristics of the MOS Schottky diode were tested using I-V and C-V measurements.…”

Section: Introductionmentioning

confidence: 99%

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Electrical and Structural Properties of All-Sputtered Al/SiO2/p-GaN MOS Schottky Diode

et al. 2019

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The all-sputtered Al/SiO2/p-GaN metal-oxide-semiconductor (MOS) Schottky diode was fabricated by the cost-effective radio-frequency sputtering technique with a cermet target at 400 °C. Using scanning electron microscope (SEM), the thicknesses of the electrodes, insulator SiO2 layer, and p-GaN were found to be ~250 nm, 70 nm, and 1 µm, respectively. By Hall measurement of a p-Mg-GaN film on an SiO2/Si (100) substrate at room temperature, the hole’s concentration (Np) and carrier mobility (μ) were found to be Np = 4.32 × 1016 cm−3 and μ = 7.52 cm2·V−1·s−1, respectively. The atomic force microscope (AFM) results showed that the surface topography of the p-GaN film had smoother, smaller grains with a root-mean-square (rms) roughness of 3.27 nm. By I–V measurements at room temperature (RT), the electrical properties of the diode had a leakage current of ~4.49 × 10−8 A at −1 V, a breakdown voltage of −6 V, a turn-on voltage of ~2.1 V, and a Schottky barrier height (SBH) of 0.67 eV. By C–V measurement at RT, with a frequency range of 100–1000 KHz, the concentration of the diode’s hole increased from 3.92 × 1016 cm−3 at 100 kHz to 5.36 × 1016 cm−3 at 1 MHz, while the Fermi level decreased slightly from 0.109 to 0.099 eV. The SBH of the diode at RT in the C–V test was higher than in the I–V test because of the induced charges by dielectric layer. In addition, the ideality factor (n) and series resistance (Rs) determined by Cheung’s and Norde’s methods, other parameters for MOS diodes were also calculated by C–V measurement at different frequencies.

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Section: Structural and Surface Morphological Characteristicsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Electrical and Structural Properties of All-Sputtered Al/SiO2/p-GaN MOS Schottky Diode

et al. 2019

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“…The slopes will give the values of series resistance R s and the intercepts will give the values of ideality factor n [5] [15] [18] [20]. Table 1 also provides the results from a detailed calculation of the series resistances R s and ideality factor n by the Cheungs' method.…”

Section: Calculations the Series Resistance Rs And Ideality Factor Nmentioning

confidence: 99%

“…The advantages of using the sputtering technique include lower deposition temperature, low equipment cost, and secure working atmosphere without using the toxic metalorganic precursors and ammonia [12]- [15]. In this study, the electrical I-V characteristics of p-n GaN diodes were determined by the thermionic emission (TE) modeat a wide testing temperature range of 25˚C -200˚C.…”

Section: Introductionmentioning

confidence: 99%

Effect of Temperature Dependence on Electrical Characterization of <i>p-n</i> GaN Diode Fabricated by RF Magnetron Sputtering

Tuan¹,

Kuo²,

Li³

et al. 2015

MSA

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The p-n junction GaN diodes were all fabricated by sputtering technique with cermet targets for pand n-type GaN and metal targets for electrodes. The interface of these p-n junction GaN diodes examined by high-resolution transition electron microscopy was clear and distinguishable. Lattice images identified the complete dissolution of Mg into the Ga site. At the room temperature, the diode had the turn-on voltage of 2.2 V, the leakage current of 2.2 × 10 −7 A, the breakdown voltage of −6 V, the barrier height of 0.56 eV, ideality factor of 5.0 by I (current)-V (voltage) test and 5.2 derived from the Cheungs' method, and series resistance of 560 Ω. These electrical properties were investigated at different testing temperatures from room temperature to 200˚C. The temperature dependence in the I-V characteristics of the p-n diodes can be successfully explained on the basis of thermionic-emission mode.

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Schottky type photodiodes with organic Co‐complex and Cd‐complex interlayers

Koçyiğit

Hussaini

Yıldırım

et al. 2022

Applied Organom Chemis

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Cd and Co metal centered nicotinamide/nicotinic acid complexes were synthesized by chemical reactions. The complexes were characterized by thermogravimetric analysis (TGA), Fourier transform infrared spectroscopy (FT‐IR), powder X‐ray diffractometer (P‐XRD), ultraviolet–visible (UV–Vis) spectrometer, and scanning electron microscopy (SEM) with energy dispersive X‐ray (EDX) detector. The complexes were used as interfacial layers in between Al and p‐Si to fabricate Al/Cd‐complex/p‐Si and Al/Co‐complex/p‐Si metal semiconductor devices. The devices were characterized by current–voltage (I‐V) and current‐time (I‐t) measurements under dark and various light power intensities. The ideality factor, barrier height, and series resistance values were extracted from I‐V measurements and discussed in detail by various techniques. The I‐t measurements were used to derive various detector parameters such as responsivity, photosensitivity, and specific detectivity for various power values and wavelength regions. The devices exhibited good photodiode and photodetector performance according to results, and they can be improved for optoelectronic applications.

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Characteristics of RF reactive sputter-deposited Pt/SiO2/n-InGaN MOS Schottky diodes

Cited by 31 publications

References 26 publications

Electrical and Structural Properties of All-Sputtered Al/SiO2/p-GaN MOS Schottky Diode

Electrical and Structural Properties of All-Sputtered Al/SiO2/p-GaN MOS Schottky Diode

Effect of Temperature Dependence on Electrical Characterization of <i>p-n</i> GaN Diode Fabricated by RF Magnetron Sputtering

Schottky type photodiodes with organic Co‐complex and Cd‐complex interlayers

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Characteristics of RF reactive sputter-deposited Pt/SiO2/n-InGaN MOS Schottky diodes

Cited by 31 publications

References 26 publications

Electrical and Structural Properties of All-Sputtered Al/SiO2/p-GaN MOS Schottky Diode

Electrical and Structural Properties of All-Sputtered Al/SiO2/p-GaN MOS Schottky Diode

Effect of Temperature Dependence on Electrical Characterization of &lt;i&gt;p-n&lt;/i&gt; GaN Diode Fabricated by RF Magnetron Sputtering

Schottky type photodiodes with organic Co‐complex and Cd‐complex interlayers

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Product

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Effect of Temperature Dependence on Electrical Characterization of <i>p-n</i> GaN Diode Fabricated by RF Magnetron Sputtering