Characteristics of Sb
 6
 Te
 4
 /VO
 2
 Multilayer Thin Films for Good Stability and Ultrafast Speed Applied in Phase Change Memory

Hu, Yifeng; Guo, Xuan; Qiu, Q. Y.; Lai, Tianshu

doi:10.1088/0256-307x/35/9/096801

Cited by 6 publications

(2 citation statements)

References 24 publications

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“…Figure 1 shows R-T curves of SS and SSOX thin films at the heating rate of 10 °C min −1 . With the increase of temperature, a continuous reduction in amorphous resistance is observed for all thin films, which is explained by the thermally activated hopping transport mechanism [25]. Before crystallization, the amorphous resistances increase from 5.02 × 10 4 Ω of SS to 1.49 × 10 7 Ω of SSO2.5 thin film in table 2.…”

Section: Resultsmentioning

confidence: 85%

Regulating phase change behavior and surface characteristics of Sn₁₅Sb₈₅ thin film by oxygen doping

Hu¹,

You²,

Chou³

et al. 2019

J. Phys. D: Appl. Phys.

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In this paper, oxygen doped Sn 15 Sb 85 thin films were proposed to reduce the power consumption for phase change memory (PCM) application. Compared with Sn 15 Sb 85 , oxygen doped Sn 15 Sb 85 thin film had higher crystallization temperature (168 °C-255 °C) and broader energy band gap (1.23-1.55 eV). X-ray diffraction patterns and transmission electron microscope showed that the crystallization of thin film was suppressed and grains became smaller when oxygen was added. After oxygen doping, the surface roughness decreased from 13.6 to 2.5 nm. Antimony oxide formed to enhance the thermal stability. In comparison to Ge 2 Sb 2 Te 5 , oxygen doped Sn 15 Sb 85 had an ultra-fast phase transition speed (3.9 ns) confirmed by laser picosecond technology. The result of differential scanning calorimetry revealed that oxygen doped Sn 15 Sb 85 had a lower melting temperature (494 °C). PCM cells based on the oxygen doped Sn 15 Sb 85 thin film were fabricated to evaluate the electrical characteristics as well. The results indicated that the oxygen doped Sn 15 Sb 85 thin film had great potentiality in PCM application.

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Section: Resultsmentioning

confidence: 85%

Regulating phase change behavior and surface characteristics of Sn₁₅Sb₈₅ thin film by oxygen doping

Hu¹,

You²,

Chou³

et al. 2019

J. Phys. D: Appl. Phys.

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“…More grain boundaries have been reported to affect carrier transport, increasing the crystalline resistivity and lowing power consumption in RESET. 31 Electrical properties, including threshold switching, reset operation power, are also essential contents for choosing the storage media. 32 PCM devices based on the PCH [Sb 2 Te 3 (7 nm)/Ga 2 Sb 3 (3 nm)] 3 films were prepared using a CMOS process to prove the triplet state process.…”

Section: Resultsmentioning

confidence: 99%

Design of Multilevel Storage Medium through Sb₂Te₃/Ga₂Sb₃ Phase-Change Heterostructure

Gu¹,

Wu²,

Zhou³

et al. 2023

ECS J. Solid State Sci. Technol.

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Phase-change heterojunction Sb2Te3/Ga2Sb3 thin films with different thickness ratios and periods were designed and prepared by the magnetron sputtering technique. The multi-level resistance states of phase-change heterojunction Sb2Te3/Ga2Sb3 film were investigated from the perspective of material and device. As for the constant thickness ratio, both the phase transition temperature and electrical resistance increase with the decrease of periods. In particular, the heterojunction [Sb2Te3(7nm)/Ga2Sb3(3nm)]3 film experiences the twice resistance jumps at 208 and 290℃, respectively, exhibiting the obvious triple-resistance states. The phase structure and vibrational modes of [Sb2Te3(7nm)/Ga2Sb3(3nm)]3 film during the different crystallization stages were observed by the structural characterization.

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Essential Characteristics of Memristors for Neuromorphic Computing

Chen

Song

Wang

et al. 2022

Adv Elect Materials

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increasingly problematic. Unlike the Von Neumann computing platform, the human brain relies on neurons and synapses for storage and computation, which do not have clear boundaries between them. Therefore, nanodevices that mimic synapses, for high-efficiency computing, have been investigated; among these nanodevices, memristors have attracted most attention because of their low power consumption, high integration density, and the ability to simulate synaptic plasticity, which meet the standards of neuromorphic computing. [4] The first report on the resistive switching phenomenon dates back to the 1960s; [5] since early theories were insufficient to explain this phenomenon, research had been done on it. It was not until the memristor was theoretically proposed in 1971, that the mechanisms underpinning the resistive switching became abundant. [6] The first memristor was manufactured by Hewlett-Packard in 2008. [7] Since then, memristors made of diverse materials have been successfully studied, including conductive filament memristors, magnetic tunnel junctions, ferroelectric tunnel junctions, phase-change memristors, and so on (Figure 1). These devices have been used for storage and computing purposes. [8,9] In recent years, there have been many reviews investigating neuromorphic computing from the perspectives of device electrical properties, [9,10] resistive switching materials, [11,12] memristive synapses and neurons, [13] algorithm optimization, [14] and circuit design. [15] Different from the existing literature, we discuss the possibility of achieving brain-like computing from the perspective of memristor technology and review the establishment of spiking neural network neuromorphic computing systems. In this article, we first review the resistive switching mechanisms of different types of memristors and focus on factors, which affect device stability and the corresponding optimization measures that have been applied. Furthermore, we study the stochasticity, power consumption, switching speed, retention, endurance, and other properties of memristors, which are the basis for neuromorphic computing implementations. We then review various memristor-based neural networks and the building of spike neural network neuromorphic computing systems. Finally, we shed light upon the major challenges and offer our perspectives and opinions for memristor-based brainlike computing systems.The memristor is a resistive switch where its resistive state is programable based on the applied voltage or current. Memristive devices are thus capable of storing and computing information simultaneously, breaking the Von Neumann bottleneck. Since the first nanomemristor made by Hewlett-Packard in 2008, advances so far have enabled nanostructured, low-power, high-durability devices that exhibit superior performance over conventional CMOS devices. Herein, the development of memristors based on different physical mechanisms is reviewed. In particular, device stability, integration density, power consumption, switching speed, retention, and e...

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Characteristics of Sb ₆ Te ₄ /VO ₂ Multilayer Thin Films for Good Stability and Ultrafast Speed Applied in Phase Change Memory

Cited by 6 publications

References 24 publications

Regulating phase change behavior and surface characteristics of Sn₁₅Sb₈₅ thin film by oxygen doping

Regulating phase change behavior and surface characteristics of Sn₁₅Sb₈₅ thin film by oxygen doping

Design of Multilevel Storage Medium through Sb₂Te₃/Ga₂Sb₃ Phase-Change Heterostructure

Essential Characteristics of Memristors for Neuromorphic Computing

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Characteristics of Sb 6 Te 4 /VO 2 Multilayer Thin Films for Good Stability and Ultrafast Speed Applied in Phase Change Memory

Cited by 6 publications

References 24 publications

Regulating phase change behavior and surface characteristics of Sn15Sb85 thin film by oxygen doping

Regulating phase change behavior and surface characteristics of Sn15Sb85 thin film by oxygen doping

Design of Multilevel Storage Medium through Sb2Te3/Ga2Sb3 Phase-Change Heterostructure

Essential Characteristics of Memristors for Neuromorphic Computing

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Characteristics of Sb ₆ Te ₄ /VO ₂ Multilayer Thin Films for Good Stability and Ultrafast Speed Applied in Phase Change Memory

Regulating phase change behavior and surface characteristics of Sn₁₅Sb₈₅ thin film by oxygen doping

Regulating phase change behavior and surface characteristics of Sn₁₅Sb₈₅ thin film by oxygen doping

Design of Multilevel Storage Medium through Sb₂Te₃/Ga₂Sb₃ Phase-Change Heterostructure