Characteristics of semi-insulating, Fe-doped GaN substrates

Vaudo, R. P.; Xu, Xueping; Salant, A.D.; Malcarne, Joseph; Brandes, George R.

doi:10.1002/pssa.200303273

Cited by 105 publications

(74 citation statements)

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“…The use of H 2 carrier gas and its effect on the efficacy of p-type doping with Mg is a point of controversy in the reports due to the formation of Mg-H complexes and the need for thermal annealing that is usually performed in situ directly after the growth. The semi-insulating type of HVPE-GaN was reported by using Fe compensating doping [12], [13], achieving free carrier concentration as low as 5 Â 10 13 cm À3 [13]. The optimization of the HVPE-GaN growth is impeded by the typical complications of crystal growth technology like the multidisciplinary nature and complex multiparameter character of the process.…”

Section: A Hydride Vapor Phase Epitaxymentioning

confidence: 99%

“…The development of substrates with both nonpolar and semipolar surfaces was initiated by utilizing foreign substrates, such as (1-102) sapphire or (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) SiC for a-plane GaN, (100) LiAlO 2 or (1-100) SiC for m-plane GaN, and (100) MgAl 2 O 4 for (10-11)-plane GaN, or (110) MgAl 2 O 4 for (10-13)-plane GaN [59]. The HVPE growth of thick layers GaN has also benefited from the ability for self-separation from some of the above substrates [60].…”

Section: Nonpolar and Semipolar Substrate Developmentmentioning

confidence: 99%

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GaN Substrates for III-Nitride Devices

2010

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| Despite the rapid commercialization of III-nitride semiconductor devices for applications in visible and ultraviolet optoelectronics and in high-power and high-frequency electronics, their full potential is limited by two primary obstacles: i) a high defect density and biaxial strain due to the heteroepitaxial growth on foreign substrates, which result in lower performance and shortened device lifetime, and ii) a strong built-in electric field due to spontaneous and piezoelectric polarization in the wurtzite structures along the well-established [0001] growth direction for nitrides. Recent advances in the research, development, and commercial production of native GaN substrates with low defect density and high structural and optical quality have opened opportunities to overcome both of these obstacles and have led to significant progress in the development of several optoelectronic and high-power devices. In this paper, the recent achievements in bulk GaN growth development using different approaches are reviewed; comparison of the bulk materials grown in different directions is made; and the current achievements in device performance utilizing native GaN substrate material are summarized.

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Section: A Hydride Vapor Phase Epitaxymentioning

confidence: 99%

Section: Nonpolar and Semipolar Substrate Developmentmentioning

confidence: 99%

GaN Substrates for III-Nitride Devices

2010

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“…Doping with transition metal ions also appears to be an interesting way of producing high-resistivity buffer layers in emerging III-nitride-based high electron mobility (HEMTs) transistors [27][28][29]. Transition metals can be introduced into group III-nitride films during growth by metal organic chemical vapour deposition (MOCVD) [30,31].…”

Section: Introductionmentioning

confidence: 99%

Metal Ions Implantation‐Induced Effects in GaN Thin Films

Husnain¹,

Madhuku²

2017

Ion Implantation - Research and Application

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“…Various approaches have been employed to compensate these residual donors by intentional doping with Mg, C, Fe, etc. Among them, carbon doping and iron doping methods are demonstrated as effective doping schemes to obtain semi-insulating GaN with all major growth techniques such as hydride vapor phase epitaxy ͑HVPE͒, 1,2 metal-organic chemical vapor deposition ͑MOCVD͒͑ Refs. 3-5͒ and molecular-beam epitaxy ͑MBE͒.…”

Section: Introductionmentioning

confidence: 99%

Growth kinetics and electronic properties of unintentionally doped semi-insulating GaN on SiC and high-resistivity GaN on sapphire grown by ammonia molecular-beam epitaxy

Tang

Fang

Rolfe

et al. 2010

Journal of Applied Physics

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Growth kinetics and electronic properties of unintentionally doped semi-insulating GaN on SiC and high-resistivityGrowth of unintentionally doped ͑UID͒ semi-insulating GaN on SiC and highly resistive GaN on sapphire using the ammonia molecular-beam epitaxy technique is reported. The semi-insulating UID GaN on SiC shows room temperature ͑RT͒ resistivity of 10 11 ⍀ cm and well defined activation energy of 1.0 eV. The balance of compensation of unintentional donors and acceptors is such that the Fermi level is lowered to midgap, and controlled by a 1.0 eV deep level defect, which is thought to be related to the nitrogen antisite N Ga , similar to the "EL2" center ͑arsenic antisite͒ in unintentionally doped semi-insulating GaAs. The highly resistive GaN on sapphire shows RT resistivity in range of 10 6 -10 9 ⍀ cm and activation energy varying from 0.25 to 0.9 eV. In this case, the compensation of shallow donors is incomplete, and the Fermi level is controlled by levels shallower than the 1.0 eV deep centers. The growth mechanisms for the resistive UID GaN materials were investigated by experimental studies of the surface kinetics during growth. The required growth regime involves a moderate growth temperature range of 740-780°C, and a high ammonia flux ͑beam equivalent pressure of 1 ϫ 10 −4 Torr͒, which ensures supersaturated coverage of surface adsorption sites with NH x radicals. Such highly nitrogen rich growth conditions lead to two-dimensional layer by layer growth and reduced oxygen incorporation.

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Characteristics of semi-insulating, Fe-doped GaN substrates

Cited by 105 publications

References 0 publications

GaN Substrates for III-Nitride Devices

GaN Substrates for III-Nitride Devices

Metal Ions Implantation‐Induced Effects in GaN Thin Films

Growth kinetics and electronic properties of unintentionally doped semi-insulating GaN on SiC and high-resistivity GaN on sapphire grown by ammonia molecular-beam epitaxy

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