Abstract. The temperature of electric initiating device under constant current has the vital significance to security and firing performance of electrical explosive initiator. Semiconductor bridge which is representative in electrical explosive devices has been widely used for excellent performances. In this study, the heavily doped polysilicon thin film was chosen as semiconductor bridge. Temperature changes of semiconductor bridge under different currents were measured using the infrared microscopic thermographer. The experimental results show that the maximum temperature of semiconductor bridge ascends while current rises from 0.70 A to 0.90 A. Based on the data analysis of infrared temperature measurement, steady-state mathematical model ( ) ( ) [3].The SCB of electro-explosive devices has a wide of applications in the areas such as automotive airbags, rocket ignition, and various ordnance system[4] to provide the igniting of energetic compounds for its improved firing performances in terms of high safety, low ignition energy and short ignition time [5,6]. Moreover, the fabrication process for SCB is fully compatible with standard microelectronics processing technology, opening the door to integrate the ignitors into the logic circuits or Micro Electronic Mechanical System (MEMS) and enhancing the functional ignitors for MEMS [7,8]. Therefore, the SCB has attracted attention from many researchers for its improved performance mentioned above.So far many researchers have done a lot of work mainly focusing on the investigation of firing performance of SCB. Benson et al.[2] found the phenomenon of vaporization process and plasma formation for SCB under the current plus applied to metal electrode. employed the microwave resonator probe to investigate the the behaviors of plasma generated by SCB such as the plasma density, the propagation speed for plasma and the plasma size with aid of the visualization of micro scale plasma and obtained the temperature of plasma through the optical emission