Characteristics of Si and Mg doping in a-plane GaN grown on r-plane sapphire

Photoluminescence study of Si-doped a-plane GaN grown by MOVPE

“…Lee et al have reported the room-temperature (RT) PL spectra of Si-doped a-plane GaN and found that broad near-band-edge (NBE) emission ranged from 3.29 to 3.41 eV, which was assigned to stacking faults. However, detailed investigation of the origin of the emission was not carried out by the authors [4]. In this study, optical properties of 2-mmthick Si-doped a-plane GaN films grown on an 8-mm-thickundoped a-plane GaN/r-plane sapphire with different carrier concentrations were investigated in detail by temperature-and excitation-intensity-dependent PL measurements.…”

“…a-Plane (11 2 0)GaN as one of the promising nonpolar nitrides has been extensively studied [2]; however, there are few detailed reports on the optical properties of Si-doped a-plane GaN [3,4]. Yu et al have studied the emission properties of Si-doped a-plane GaN by temperature-dependent photoluminescence (PL) and they assigned the peak at 3.42 eV to donor-acceptor pair (DAP) emission based on the results of temperature dependence of its emission [3].…”

Crystalline dependence of optical and interfacial properties of InGaN/GaN quantum wells on nonpolar a-plane GaN/r-sapphire

“…Recently, one of most important issues is the enhancement of light output power to commercialize GaN-based light emitting diodes (LEDs) as a lighting source [1][2][3][4][5]. However, there are a few critical issues to increase the internal quantum efficiency of LEDs.…”

“…However, there are a few critical issues to increase the internal quantum efficiency of LEDs. Among some issues the luminous efficiency of c-plane GaN-based LEDs is significantly influenced by intrinsic spontaneous and piezoelectric polarization effects [2][3][4][5]. Specifically, the spatial separation of the electron and the hole wave functions caused by the quantum confined Stark effect reduces the oscillator strength of transition and the recombination efficiency in InGaN/GaN quantum wells (QWs) structure [1].…”

Room-temperature ferromagnetism and in-plane magnetic anisotropy characteristics of nonpolar GaN:Mn films

“…Nonpolar GaN:Mn films are expected to have a high Curie temperature due to their high Mn and Mg incorporation efficiency [5,6]. Moreover, the in-plane anisotropy in hole mobility [7], photoluminescence intensity [8] and absorption coefficient [9] of nonpolar GaN films has already been reported.…”