Characteristics of Si-PIN nuclear radiation detectors stacked in series and parallel

Gao, Xu; Li, Fenghua; Lu, Min; Jiang, Yong; Li, Cheng

doi:10.1007/s11431-015-5802-7

Cited by 6 publications

(2 citation statements)

References 8 publications

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“…Typically, the thermal neutron intrinsic detection efficiency for thin-film-coated detectors is lower than 5% [6], [10], [16]. To improve the detection efficiency, researchers have proposed a stacked silicon neutron detector structure [17], [18]. In addition, McGregor's group developed a silicon microstructured semiconductor neutron detector (MSND) that significantly improves the neutron detection efficiency [13], [14], [15], [19], [20].…”

Section: Introductionmentioning

confidence: 99%

Improving Detection Efficiency of Silicon Carbide Neutron Detector Using Double Trench

et al. 2023

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In this article, we propose a double-trenchtype silicon carbide (SiC) neutron detector and model it using the concept of a unit cell on the GEANT4 platform. When the low-level discriminator (LLD) value was fixed at 300 keV, the structural parameters of this double-trench-type SiC neutron detector were optimized to maximize the intrinsic detection efficiency. Compared with the single trench type, the doubletrench-type SiC neutron detector can significantly improve the neutron intrinsic detection efficiency within a limited trench depth, which was especially suitable for the current technological status that SiC materials can only be used for shallow trench etching. Apart from optimizing the structural parameters, the energy deposition spectra in the SiC detector region by the generated secondary charged particles upon thermal neutron interaction in neutron conversion materials ( 10 B and 6 LiF) have also been estimated. It can be found that the double-trench-type SiC neutron detector counts significantly increased in the low-energy range, while the counts in the high-energy range are only slightly decreased. This is also the essential reason why the intrinsic detection efficiency of the double-trench-type SiC neutron detector was significantly improved compared to the single-trench-type SiC neutron detector.

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Section: Introductionmentioning

confidence: 99%

Improving Detection Efficiency of Silicon Carbide Neutron Detector Using Double Trench

et al. 2023

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“…The neutron detector composing of two kinds of conversion layers, such as 1.1 μm 10 B+60 μm 6 LiF, was found to have a neutron detection efficiency of 11.6% [7]. The stacked detectors in series where each detector unit was an independent 6 LiF-coated neutron detector could improve its efficiency a lot [17]. Another type of stacked detectors were proposed where the basic detector unit was made of a 6 Li foil coupled to two silicon diodes, and the theoretical intrinsic efficiency was 23.8% for one detector-unit and 60% for five stacked detector units [18].…”

Section: Introductionmentioning

confidence: 99%

The response of an Al-¹⁰B₄C coupled neutron detector based on PIPS technology to Cf-252

Zhang,

Wu,

et al. 2023

J. Inst.

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After decades of discussions, it has been firmly established that detectors made of silicon-based semiconductor materials can be effectively used for neutron detection by simply coating them with suitable substances. The incident thermal neutrons interact with the coating neutron-sensitive materials such as 10B and 6LiF, resulting in the production of secondary charged particles which can be effectively detected in the sequencial silicon substrate. In this article, the detector system was designed with a coupled neutron detector structure which combined a silicon detector with a 10B4C film in various forms. The 10B4C layer was deposited on the substract with electron beam evaporation method. Two kinds of structrue were discussed: (1) one was the direct contact neutron detector by depositing 10B4C directly onto the front surface of silicon-based detectors; (2) the other was the coupled neutron detectors by depositing 10B4C onto substrates made from different materials such as Al and glass which then coupled with silicon-based detectors. The responses of these neutron detectors to neutrons (Cf-252) were measured individually. It's showen that the detection capability of direct contact neutron detectors was lower than the coupled neutron detectors. For the coupled detectors, the detector by depositing 10B4C on the aluminum substrate was found to be superior than that by depositing 10B4C on the glass substrate.

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Improving thermal-neutron detection efficiency of silicon neutron detectors using the combined layers of 10B4C on 6LiF

Jiang

Yin

et al. 2019

Nuclear Instruments and Methods in Physics Research Section A:

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Characteristics of Si-PIN nuclear radiation detectors stacked in series and parallel

Cited by 6 publications

References 8 publications

Improving Detection Efficiency of Silicon Carbide Neutron Detector Using Double Trench

Improving Detection Efficiency of Silicon Carbide Neutron Detector Using Double Trench

The response of an Al-¹⁰B₄C coupled neutron detector based on PIPS technology to Cf-252

Improving thermal-neutron detection efficiency of silicon neutron detectors using the combined layers of 10B4C on 6LiF

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Characteristics of Si-PIN nuclear radiation detectors stacked in series and parallel

Cited by 6 publications

References 8 publications

Improving Detection Efficiency of Silicon Carbide Neutron Detector Using Double Trench

Improving Detection Efficiency of Silicon Carbide Neutron Detector Using Double Trench

The response of an Al-10B4C coupled neutron detector based on PIPS technology to Cf-252

Improving thermal-neutron detection efficiency of silicon neutron detectors using the combined layers of 10B4C on 6LiF

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The response of an Al-¹⁰B₄C coupled neutron detector based on PIPS technology to Cf-252