2013
DOI: 10.1016/j.nima.2012.11.004
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Characteristics of signals originating near the lithium-diffused N+ contact of high purity germanium p-type point contact detectors

Abstract: A study of signals originating near the lithium-diffused n+ contact of p-type point contact (PPC) high purity germanium detectors (HPGe) is presented. The transition region between the active germanium and the fully dead layer of the n+ contact is examined. Energy depositions in this transition region are shown to result in partial charge collection. This provides a mechanism for events with a well defined energy to contribute to the continuum of the energy spectrum at lower energies. A novel technique to quan… Show more

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Cited by 56 publications
(26 citation statements)
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“…[47], the difference from the reference the T 2ν 1/2 result is less than 0.1 %. -A possible effect of a transition layer, where it is assumed that the n + dead layer on the detector surfaces is partially active, has been investigated [48,49]. The dead layer thickness for individual detectors assumed in MC simulations was given according to the listed values in Ref.…”
Section: Systematic Uncertaintiesmentioning
confidence: 99%
See 1 more Smart Citation
“…[47], the difference from the reference the T 2ν 1/2 result is less than 0.1 %. -A possible effect of a transition layer, where it is assumed that the n + dead layer on the detector surfaces is partially active, has been investigated [48,49]. The dead layer thickness for individual detectors assumed in MC simulations was given according to the listed values in Ref.…”
Section: Systematic Uncertaintiesmentioning
confidence: 99%
“…The medium distant position is represented by decays in the radon-shroud or in the LAr, having a probability 1/2 in contrast. -Extensive studies of the characteristics of the BEGe diodes suggest the presence of a transition layer between the region where the detector is fully effi-cient and the external dead region [48,49]. An uncertainty as high as ±0.5 % on the lower limits of T 0νχ 1/2 is estimated for this effect in the case of the BEGe detectors.…”
Section: (I) Detector Parameters and Fit Modelmentioning
confidence: 99%
“…Ref. [18]) up to the point near the outer surface where the Li concentration becomes high enough to result in a significant recombination probability. Due to the slow nature of the diffusion compared to the charge carrier drift in the active volume, the rise time of signals from interactions in this region is increased.…”
Section: Bege Detectorsmentioning
confidence: 99%
“…The contribution from 42 K decays on the n + surface, on the other hand, is enhanced with respect to the coaxial detectors due to the thinner dead layer and has to be taken into account for the model. The n + surface dead layer is partially active [32], which in particular affects the detection efficiency for surface β interactions. Thus, the MC simulation used for 42 K on n + surface included an approximation of this effect.…”
Section: Background Model For Bege Detectorsmentioning
confidence: 99%