Characteristics of silicon oxide thin films prepared by sol electrophoretic deposition method using tetraethylorthosilicate as the precursor

Rha, Sa‐Kyun; Chou, Tammy P.; Lee, Youn‐Seoung; Lee, Wonjun

doi:10.1016/j.cap.2008.03.023

Cited by 21 publications

(9 citation statements)

References 12 publications

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“…8(b) reveals the breakdown voltage of the SiO 2 film is 43 V corresponding to the breakdown electric field of 0.9 MV/cm. This value is higher than 0.5-0.8 MV/cm of the sol-gel SiO 2 obtained by Rha et al [37]. The dielectric constant of sample D is 2.24 extracted by the measured capacitance-voltage (C-V) curve shown in the inset of Fig.…”

Section: Resultsmentioning

confidence: 89%

Low Temperature Fabrication of an Amorphous InGaZnO Thin-Film Transistor With a sol-gel SiO₂Gate Dielectric

Hsu

Chu

Sun

et al. 2016

J. Display Technol.

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Abstract-In this work, low temperature fabrication of an amorphous InGaZnO thin film transistor (a-IGZO TFT) was demonstrated. The maximum process temperature was 200 °C. The gate dielectric was a sol-gel SiO 2 film while the channel layer was a sputtered a-IGZO semiconductor. The optimal sol-gel film for gate dielectric application was obtained by considering effects of surfactant, solvent, plasma treatment and curing process on the film characteristics. The reasons for leakage current variations of the sol-gel films prepared with different conditions were examined by a scanning electron microscope and Fourier-transform infrared analysis. The leakage current mechanism of the optimal sol-gel SiO 2 film was found to be dominated by Ohmic conduction. The characteristics of a-IGZO layers deposited with oxygen flow rates of 0-3 sccm were investigated. By integrating the optimal sol-gel SiO 2 dielectric and the sputtered a-IGZO layer, we successfully fabricated the TFT with a field effect mobility of 6.4 cm 2 /Vs. The interface trap density between the sol-gel SiO 2 and the a-IGZO layer was found to be 9.2 × 10 11 cm -2 eV -1 .

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Section: Resultsmentioning

confidence: 89%

Low Temperature Fabrication of an Amorphous InGaZnO Thin-Film Transistor With a sol-gel SiO₂Gate Dielectric

Hsu

Chu

Sun

et al. 2016

J. Display Technol.

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“…Most of the time, the geometric surface of the working electrode or substrate is considered, neglecting the surface of conduction or the cumulative charge effect in edges and peaks. So, the characteristics of the substrate surface, such as its nature [16], roughness, surface charge [17] or its electrical response [18,19], determine not only the morphology of the films and even the success of the assembly process, but also the process kinetics.…”

Section: Introductionmentioning

confidence: 99%

Improvement of TiN nanoparticles EPD inducing steric stabilization in non-aqueous suspensions

Mendoza

González

Castro

et al. 2016

Journal of the European Ceramic Society

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Abstract:In this work, the process parameters involved in the electrophoretic deposition (EPD) to obtain thin TiN films was studied and optimised. The stability of commercial TiN nanopowder in isopropyl alcohol adding a cationic polymer (polyethylenimine) as dispersant, with different molecular weights, was investigated to determine the kinetics of the deposition and to reach the most efficient EPD process. Cathodic EPD was performed over electro-polished stainless steel substrates. It was found that the provided dispersion when the PEI with the highest molecular weight was added to the suspension, leads to the best deposition behaviour for short times. New flocculation phenomena were described which affect to the sticking factor, and thus to the evolution of the EPD kinetics. As a result of the designed stabilization system, a reliable and versatile EPD method to produce well consolidated nano-TiN coatings at 1200• C in vacuum atmosphere was described.

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“…Ordered monolayers of PS spheres were prepared using the Langmuir–Blodgett (LB) self‐assembly technique as described in literatures . SiO 2 sol–gel was synthesized as described in the literature . Ag layer was evaporated onto the SiO 2 nanobowl arrays (BAL‐TEC SCD 050 Sputter Coater at 60 mA for 900 s (2.5 × 10 −2 mbar)).…”

Section: Methodsmentioning

confidence: 99%

Preparation of Silver Nanocap Arrays and Their Surface‐enhanced Raman Scattering Activity

Wang

et al. 2017

Bulletin Korean Chem Soc

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In this article, a surface‐enhanced Raman scattering (SERS) substrate of silver nanocap arrays was reported. With increasing the size of nanocaps, the localized surface plasmon resonance (LSPR) of the arrays exhibited tunable ability in the visible spectral region. The optical response of the nanocap arrays stimulated their use in SERS experiments. The assessment of SERS activity of the nanocap arrays was performed by using the 514.5 nm excitation line, and different average enhancement factor (EF) values were obtained. The good tunability of LSPR, relatively high average EF values and long‐range order of these substrates suggest that the silver nanocap arrays have promising applications as functional components in spectroscopy, immunoassay, biosensors, and biochips.

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Characteristics of silicon oxide thin films prepared by sol electrophoretic deposition method using tetraethylorthosilicate as the precursor

Cited by 21 publications

References 12 publications

Low Temperature Fabrication of an Amorphous InGaZnO Thin-Film Transistor With a sol-gel SiO₂Gate Dielectric

Low Temperature Fabrication of an Amorphous InGaZnO Thin-Film Transistor With a sol-gel SiO₂Gate Dielectric

Improvement of TiN nanoparticles EPD inducing steric stabilization in non-aqueous suspensions

Preparation of Silver Nanocap Arrays and Their Surface‐enhanced Raman Scattering Activity

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Characteristics of silicon oxide thin films prepared by sol electrophoretic deposition method using tetraethylorthosilicate as the precursor

Cited by 21 publications

References 12 publications

Low Temperature Fabrication of an Amorphous InGaZnO Thin-Film Transistor With a sol-gel SiO2Gate Dielectric

Low Temperature Fabrication of an Amorphous InGaZnO Thin-Film Transistor With a sol-gel SiO2Gate Dielectric

Improvement of TiN nanoparticles EPD inducing steric stabilization in non-aqueous suspensions

Preparation of Silver Nanocap Arrays and Their Surface‐enhanced Raman Scattering Activity

Contact Info

Product

Resources

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Low Temperature Fabrication of an Amorphous InGaZnO Thin-Film Transistor With a sol-gel SiO₂Gate Dielectric

Low Temperature Fabrication of an Amorphous InGaZnO Thin-Film Transistor With a sol-gel SiO₂Gate Dielectric