Characteristics of spin-valve films with non-magnetic oxide layers for specular-scattering

Mizuguchi, T.; Kano, Hiroshi

doi:10.1109/20.950955

Cited by 11 publications

(3 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As was found previously, a 1-nm-thick Ta layer can completely protect the samples. [28] Hence, further increasing the Ta thickness (t Ta > 2 nm) has little effect on the interface and is not expected to change the PMA.…”

Section: Perpendicular Magnetic Anisotropy In Cofeb Sandwiched By Mgo...mentioning

confidence: 99%

“…Although it is hard to accurately determine how thick Ta is oxidized, 1-nm-thick Ta is enough to completely protect the samples. [28] In order to study the thickness of Ta oxide on AHE, two series of samples, Ta (0.55-5)/CoFeB (1.04)/MgO (1.1) and MgO (11)/CoFeB (1.22)/Ta (0.55-5) (T ann = 300 • C), were prepared. All the samples show squared loops, indicating 100% out-of-plane remanence.…”

Section: Anomalous Hall Effect Of Perpendicularmentioning

confidence: 99%

See 1 more Smart Citation

Anomalous Hall effect in perpendicular CoFeB thin films

Zhu¹

2014

Chinese Phys. B

View full text Add to dashboard Cite

Our recent research achievements in the perpendicular magnetic anisotropy (PMA) properties of the CoFeB sandwiched by MgO and tantalum layers are summarized. We found that the PMA behaviors of Ta/CoFeB/MgO and MgO/CoFeB/Ta thin films are different. The larger PMA in the latter film is related to the lower magnetization of CoFeB deposited on MgO. Furthermore, we have demonstrated a large anomalous Hall effect in perpendicular CoFeB thin film. Our results show large anomalous Hall resistivity, large longitudinal resistivity, and low switching field can be achieved, all at the same time, in the perpendicular CoFeB thin film. Anomalous Hall effect with high and linear sensitivity is also found in an MgO/CoFeB/Ta thin film with a thick MgO layer, which opens a door for future device applications of perpendicular ferromagnetic thin films.

show abstract

Section: Perpendicular Magnetic Anisotropy In Cofeb Sandwiched By Mgo...mentioning

confidence: 99%

Section: Anomalous Hall Effect Of Perpendicularmentioning

confidence: 99%

Anomalous Hall effect in perpendicular CoFeB thin films

Zhu¹

2014

Chinese Phys. B

View full text Add to dashboard Cite

show abstract

“…The specular scattering incorporating various types of nano-oxide layer (NOL) inside SV systems has recently become a subject of great interest with regard to increasing the magnetoresistance (MR) ratio [9][10][11]. An increase in the MR ratio results from specular reflection of electrons from the interface between ferromagnetic and nonmagnetic layers while conserving their spin direction.…”

mentioning

confidence: 99%

Thermal stability and specular reflection behaviour of CoNbZr-based bottom spin valves with nano-oxide layer

Kim

Lee

2004

phys. stat. sol. (a)

View full text Add to dashboard Cite

PACS 66.30.Xj, 75.47.De, 82.80.Pv, 85.70.Kh The thermal stability and specularity aspects of a CoNbZr-based bottom spin valve (SV) employing a nano-oxide layer (NOL) were investigated. The magnetoresistance (MR) ratio of the as-deposited CoNbZrbased bottom SV increased by 62% (from 6.3 to 10.2%) with incorporation of the NOL. The enhancement of the MR ratio was considered to be due to the specular effect (∆ρ increased from 0.722 to 1.363 µΩ cm) of the NOL. The MR ratio of a Ta-based bottom SV decreased by about 45% (from 6.9 to 3.8%) when the samples were annealed at 300 °C for 240 min. By contrast, the MR ratio of the CoNbZr-based bottom SV with NOL increase d by 14 % (from 10.2 to 11.7%). The root mean square roughness value of the CoNbZr layer (0.07 nm) was superior to that of the Ta layer (0.43 nm). Although Mn in IrMn diffused out to the surface through the active layers resulting in the formation of Mn oxide at the surface in the CoNbZrbased bottom SV, no trace of Mn was found in the active layers and no significant degradation occurred.

show abstract

Giant magnetoresistance and magnetic interactions in exchange-biased spin-valves

Coehoorn

2003

Handbook of Magnetic Materials

View full text Add to dashboard Cite

Characteristics of spin-valve films with non-magnetic oxide layers for specular-scattering

Cited by 11 publications

References 3 publications

Anomalous Hall effect in perpendicular CoFeB thin films

Anomalous Hall effect in perpendicular CoFeB thin films

Thermal stability and specular reflection behaviour of CoNbZr-based bottom spin valves with nano-oxide layer

Giant magnetoresistance and magnetic interactions in exchange-biased spin-valves

Contact Info

Product

Resources

About