Characteristics of SrBi2Ta2O9 ferroelectric films on Si using LaAlO3 thin film as an insulator

Li, A.-D.; Wang, Y.-J.; Shao, Qiyue; Cheng, Jin-Bo; Wu, Di; Ling, Huiqin; Bao, Yongjun; Wang, M.; Liu, Z.-G.; Ming, Nai‐Ben

doi:10.1007/s00339-004-3021-3

Cited by 2 publications

(1 citation statement)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…15͒, means low leakage, making them suitable for nondestructive readout devices. [23][24][25][26] As the thickness of the ferroelectric layer of the copolymer is reduced in order to decrease operating voltage, careful attention should be applied to the leakage current, which may limit retention times. 15 Memory devices based on copolymers of P͑VDF-TrFE͒ provide different opportunities, and face different challenges than those based on ferro-electric perovskites.…”

Section: Investigation Of State Retention In Metal-ferroelectric-insumentioning

confidence: 99%

Investigation of state retention in metal–ferroelectric–insulator–semiconductor structures based on Langmuir–Blodgett copolymer films

Reece

Gerber

Kohlstedt

et al. 2010

Journal of Applied Physics

View full text Add to dashboard Cite

Low-voltage operation of ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer capacitors and metalferroelectric-insulator-semiconductor diodes Appl. Phys. Lett. 90, 162902 (2007); 10.1063/1.2723678Low-voltage operation of metal-ferroelectric-insulator-semiconductor diodes incorporating a ferroelectric polyvinylidene fluoride copolymer Langmuir-Blodgett film Among the ferroelectric thin films considered for use in nonvolatile memory devices, the ferroelectric copolymer of polyvinylidene fluoride, PVDF ͑C 2 H 2 F 2 ͒, with trifluoroethylene, TrFE ͑C 2 HF 3 ͒, has distinct advantages, including low dielectric constant, low processing temperature, relative low cost compared with epitaxial ferroelectric oxides, and compatibility with organic semiconductors. We report the operation and polarization retention properties of a metalferroelectric-insulator-semiconductor bistable capacitor memory element consisting of an aluminum gate, a P͑VDF-TrFE͒ Langmuir-Blodgett film, a 30 nm cerium oxide buffer layer, and a moderately doped silicon wafer. The device exhibited a 1.9 V wide hysteresis window obtained with a Ϯ7 V operating range with a state retention time of 10 min. The mechanisms contributing to loss of state retention are discussed.

show abstract

Section: Investigation Of State Retention In Metal-ferroelectric-insumentioning

confidence: 99%

Investigation of state retention in metal–ferroelectric–insulator–semiconductor structures based on Langmuir–Blodgett copolymer films

Reece

Gerber

Kohlstedt

et al. 2010

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

Fabrication and characterization of metal-ferroelectric-insulator-Si diodes and transistors with different HfSiON buffer layer thickness

Ishiwara

Maruyama

2008

J. Mater. Res.

View full text Add to dashboard Cite

Metal-ferroelectric-insulator-Si (MFIS) structures using HfSiON as buffer layers were fabricated, and the impact of buffer layer thickness on the electrical properties of the MFIS devices was investigated. HfSiON films with thickness ranging from 1 to 4 nm were deposited by electron beam evaporation, which exhibited much reduced leakage current when compared to that of SiO2 with the same equivalent oxide thickness. From the viewpoint of polarization and charge injection, the flatband voltage and memory window width dependent on the sweeping voltages were discussed for the MFIS diodes with 1-, 2-, and 4-nm-thick HfSiON buffer layers. Small leakage current as well as excellent long-term data retention characteristics were found for all of these samples. It was also found that MFIS diodes with 2-nm-thick HfSiON buffer layer have the largest memory window width. Ferroelectric-gate transistors fabricated with a Pt/SBT(300nm)/HfSiON (2 nm)/Si gate structure showed a memory window of 0.8 V and a high drain current on/off ratio of 108 for the gate voltage sweep between +4 and −4 V. All of these excellent electrical properties proved that HfSiON acts as an excellent barrier for suppressing both leakage current and atomic interdiffusion.

show abstract

Characteristics of SrBi2Ta2O9 ferroelectric films on Si using LaAlO3 thin film as an insulator

Cited by 2 publications

References 15 publications

Investigation of state retention in metal–ferroelectric–insulator–semiconductor structures based on Langmuir–Blodgett copolymer films

Investigation of state retention in metal–ferroelectric–insulator–semiconductor structures based on Langmuir–Blodgett copolymer films

Fabrication and characterization of metal-ferroelectric-insulator-Si diodes and transistors with different HfSiON buffer layer thickness

Contact Info

Product

Resources

About