CHARACTERISTICS OF THE INDIUM- AND GALLIUM-DOPED SILICON INFRARED SENSING MOSFET's (IRFET's)

Forbes, L.; Loh, K. W.; Wittmer, L.

doi:10.7567/ssdm.1976.b-3-1

Extended Abstracts of the 1976 International Conference on Solid State Devices 1976

DOI: 10.7567/ssdm.1976.b-3-1

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CHARACTERISTICS OF THE INDIUM- AND GALLIUM-DOPED SILICON INFRARED SENSING MOSFET's (IRFET's)

L. Forbes¹,

K. W. Loh²,

L. Wittmer³

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CHARACTERISTICS OF THE INDIUM- AND GALLIUM-DOPED SILICON INFRARED SENSING MOSFET's (IRFET's)

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