Characteristics of the low energy photoluminescence in μc-Si films

Yue, Guozhen; Han, Daxing; McNeil, L. E.; Wang, Qi

doi:10.1063/1.1289785

Cited by 11 publications

(2 citation statements)

References 14 publications

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“…In the initial state, the 100 Å thick buffer layer blocks the shunt current and increases V oc and FF for the mixed-phase solar cells (cell 11 and cell 13) [8], but does not show an effect on the cell with a fully amorphous signature (cell 23). region appears [9][10][11]. After light soaking, the light-induced V oc increase was observed in both the cells with no buffer layer and with a 100 Å thick buffer layer, but was not observed in the cells with a 500 Å thick buffer.…”

Section: Experimental and Resultsmentioning

confidence: 93%

Buffer-layer Effect on Mixed-Phase Cells Studied by Micro-Raman and Photoluminescence Spectroscopy

et al. 2004

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We use micro-Raman and photoluminescence (PL) spectroscopy to study the effects of an a-Si:H buffer layer at the i/p interface of the mixed-phase silicon solar cells. We find that the signature of the crystalline 520 cm -1 mode still appears on the Raman spectrum for the cells with a 100 Å thick a-Si:H buffer layer; but it completely disappears for cells with a 500 Å thick a-Si:H buffer layer. At 80 K, the PL spectral lineshape reflects the features of the electronic states in the band tails. The characteristics of the PL spectra of the mixed-phase cells are a narrower main band than the standard a-Si:H band and an extra low energy band from the grain boundary region. As the thickness of the a-Si:H buffer layer increases, the PL main band becomes broader, and the low energy band is depressed. We find that, after light soaking, the PL main band is slightly broadened for the cells with no a-Si:H buffer layer, almost no change for the cells with a 100 Å thick buffer layer, and a remarkable decrease in total PL intensity for the cells with a 500 Å thick buffer layer. In addition, the PL intensity of the defect band increases after light soaking for the cells with a 500 Å thick buffer layer, where light-induced defect generation in the a-Si:H buffer layer masks the changes in the mixed-phase intrinsic layer. The Raman and PL results are consistent with previous observations of the effect of an a-Si:H buffer layer on the performance and metastability against light soaking for mixed-phase solar cells.

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Section: Experimental and Resultsmentioning

confidence: 93%

Buffer-layer Effect on Mixed-Phase Cells Studied by Micro-Raman and Photoluminescence Spectroscopy

et al. 2004

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“…shows four typical groups of data obtained at 13.6, 19.7, 40, and 60 K. The straight lines are linear best fits to the data. Since the I PL and excitation density P can be related as [16] I PL ∝ P Z , (…”

Section: Resultsmentioning

confidence: 99%

Temperature and excitation density dependent photoluminescence of sputtering-induced GaAs/AlGaAs quantum dots

Wang¹,

Yoon

Liu

et al. 2007

Nanotechnology

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GaAs/AlGaAs quantum dots (QDs) are fabricated by low-energy ion beam sputtering and molecular beam epitaxy (MBE) re-growth. Temperature (6.5-78 K) and excitation power density (0.49-3.06 W cm −2 ) dependent photoluminescence (PL) are presented and discussed in detail. The low-temperature PL emission at 720 nm is attributed to GaAs QDs with height of ∼6.1 nm and base width of ∼23 nm, calculated based on the quantum box model with infinite potential barrier. The calculated QD dimensions are in good agreement with those obtained from atomic force microscopy (AFM) analysis. Nonradiative recombination and Auger-assisted recombination are found to be the main PL quenching mechanisms at high temperature.

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Photovoltaics literature survey (no. 6)

Keevers

2001

Progress in Photovoltaics

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In order to help keep readers up‐to‐date in the field each issue of Progress in Photovoltaics will contain a list of recently published journal articles most relevant to its aims and scope. This list is drawn primarily from recent issues of IEEE Transactions on Electron Devices, Journal of Applied Physics, Progress in Photovoltaics, Solar Energy and Solar Energy Materials and Solar Cells, with additional journals surveyed if space permits. To assist the reader, the list is separated into broad categories, but please note that these classifications are by no means strict. Also note that inclusion in the list is not an endorsement of a paper's quality. If you have any suggestions please email Mark Keevers at m.keevers@unsw.edu.au Copyright © 2001 John Wiley & Sons, Ltd.

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Characteristics of the low energy photoluminescence in μc-Si films

Cited by 11 publications

References 14 publications

Buffer-layer Effect on Mixed-Phase Cells Studied by Micro-Raman and Photoluminescence Spectroscopy

Buffer-layer Effect on Mixed-Phase Cells Studied by Micro-Raman and Photoluminescence Spectroscopy

Temperature and excitation density dependent photoluminescence of sputtering-induced GaAs/AlGaAs quantum dots

Photovoltaics literature survey (no. 6)

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