Characteristics of Ti-doped sapphire for fluorescence thermo-sensor

Katsumata, T.; Nakayama, A.; Kano, Y.; Aizawa, Hiroaki; Komuro, Shuji

doi:10.1109/iccas.2007.4406718

Cited by 4 publications

(6 citation statements)

References 5 publications

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“…Grown crystals were typically 5 mm in diameter and 30 mm long. Excitation spectra and emission spectra from Ti doped Al 2 O 3 with various Ti concentrations 15 are shown in Fig. 2.…”

Section: Resultsmentioning

confidence: 99%

“…Figure 3 shows temperature dependences of PL spectra (a) 14,15 and PL peak intensities at λ = 650, 700, 725, 750, and 800 nm (b). PL spectra were measured from 0.5 at% Ti doped Al 2 O 3 crystal at various temperatures from 20 to 250 °C.…”

Section: Resultsmentioning

confidence: 99%

“…14 Figure 1 shows a schematic illustration of equipment for photoluminescence (PL) measurement and PL image observation at various temperatures. [14][15][16] PL from Ti doped sapphire are excited using a blue LED (λ = 480 nm). Photoluminescence (PL) images from Ti doped sapphire were observed using MN-401 type color Si CCD camera (Elmo, Co., Japan) with long pass filter (cut off wavelength at λ = 600 nm) at various temperatures from 20 °C to 250 °C.…”

Section: Methodsmentioning

confidence: 99%

“…Ti doped Al 2 O 3 is, therefore, expected as a sensor material for a 2-D fluorescence thermometer based on PL imaging. [14][15][16] Photoluminescence (PL) imaging is one of the most effective techniques in the fluorescence thermometry. Two-dimensional (2-D) temperature measurements can be carried out using PL imaging thermometer.…”

mentioning

confidence: 99%

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Fluorescence Thermometry Based on PL Spectra and PL Image from Ti Doped Al₂O₃

Katsumata

Kano

Honda

et al. 2021

ECS J. Solid State Sci. Technol.

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Temperature dependences of photoluminescence (PL) from Ti doped sapphire (Ti doped Al 2 O 3 ) crystals peaking at λ = 725 nm is evaluated for a fluorescence thermometry application. PL intensity from Ti doped sapphire decreases with temperatures increasing from 20 to 250 o C. 2-dimensional (2-D) PL images were observed from Ti doped sapphire using a CCD camera under a blue LED illumination. Brightness (intensity of red signal) of the PL image decreases linearly with temperature as is seen in PL peak intensity. The tendency of the temperature change of the PL peak intensity, intensity ratio, and full width at the half maximum (FWHM) of PL peak, and the brightness of the PL image from Ti doped Al 2 O 3 are found to be useful for a fluorescence thermometry.

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“…Grown crystals were typically 5 mm in diameter and 30 mm long. Excitation spectra and emission spectra from Ti doped Al 2 O 3 with various Ti concentrations 15 are shown in Fig. 2.…”

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

mentioning

confidence: 99%

See 2 more Smart Citations

Fluorescence Thermometry Based on PL Spectra and PL Image from Ti Doped Al₂O₃

Katsumata

Kano

Honda

et al. 2021

ECS J. Solid State Sci. Technol.

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“…[5][6][7][8][9] In these phosphors, either excitation efficiency or luminescence quenching of the activators might be enhanced improving the luminescence thermometers performance. Herein, we use different and more classic approach, [10][11][12][13] using the temperature dependence of the luminescence originated from Ti 4+ -dopant ion directly.…”

mentioning

confidence: 99%

On the Luminescence of HfGeO₄:Ti⁴ ⁺ X-ray Phosphor and Luminescence Thermometer

Jedoń

Pasiński

Zych

2023

ECS J. Solid State Sci. Technol.

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A comprehensive investigation of the HfGeO4:1%Ti phosphor, focusing primarily on its thermoluminescence properties in the range of 30-500°C and photoluminescence in the 13 - 600 K is reported. The thermoluminescence exposed three TL peaks at 70, 120, and 180°C whose properties were analyzed. Two emissions peaking at 430 nm under 255 nm excitation and, previously never reported, at 580 nm under 320 nm excitation were identified and characterized. They showed different thermal quenching properties. On the contrary to the emission intensity, which slightly increased from 13 K to about 200 K, the decay time of the 430 nm luminescence started shortening just about 40 K. It continued this trend up to 600 K with different dynamics. The 580 nm luminescence got thermally quenched within the 30-400 K range. Both emissions presented very good thermometric properties when their decay times were used as the thermometric parameter with relative thermal sensitivity of 7.67 %/K at 62 K (430 nm luminescence), and 6.04 %/K at 73 K (580 nm). The HfGeO4:1%Ti appeared a very good luminescence thermometer operating in a wide range of 30-600 K, with sensitivities higher than 0.4 %/K.

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