Characteristics of TiN Thin Films Deposited by Substrate Temperature Variables Using Scanning Acoustic Microscopy

Abstract

In this study, TiN thin films fabricated based on the substrate temperature process parameters of a DC magnetron sputtering device and their characteristics are analyzed. TiN thin films are deposited on Si wafer (100) substrates by setting the substrate temperatures to ambient temperature, 100, 200, and 300 °C. The residual stress measurement using the XRD method, adhesion characteristic analysis performed using a nanoscratch test to measure the critical load of the nanoindentation device, and leaky surface acoustic wave (LSAW) measurement were conducted using the V(z) technique of the ultrasonic microscope; the correlations between each measurement were analyzed. The residual stress of the TiN thin film was relieved by up to approximately 48% and adhesion properties enhanced by approximately 10% with an increase in the substrate temperature. In addition, the velocity of the LSAW presented a tendency to increase by up to approximately 5%. The residual stress and velocity of the LSAW were found to be inversely proportional, while the critical load and velocity of the LSAW were directly proportional.

Enhanced Corrosion Resistance of TiZrN-Coated Additively Manufactured 8620 Low-Alloy Steel in Nitrate Salt Solution and Salt Bath

“…High-purity argon gas was supplied to the chamber and the sputtering was carried out at a working pressure of 1.2 × 10 −2 Torr. The substrates were heated to a temperature of 200 • C. A substrate temperature of 200 • C was chosen to improve coating adhesion [52], increase hardness [53], and reduce residual stress [52] and dislocation density [54]. The Ti and Zr targets were co-sputtered via DC and RF guns powered at 150 W and 100 W, respectively.…”

Influence of topography on nano-mechanical properties of cylindrical magnetron sputtered TiN films

“…TiN belongs to the category of transition metal nitrides and possesses outstanding physical and mechanical properties, along with considerably high resistance to oxidation and corrosion. Due to these exceptional characteristics, TiN-based thin films are utilized in various applications such as wear-resistant coatings on cutting tools [1], microelectronics applications on semiconductors and interconnectors [2], corrosionresistant coating at acidic ambient [3], oxidationresistant coating for high-temperature applications [4]. TiN thin film can be synthesized through various techniques such as laser ablation [5], thermal evaporation, Chemical Vapor Deposition (CVD) [6], Cathodic Arc Evaporation (CAE) [7], ion beam-assisted Physical Vapor Deposition (IBPVD) [8] and sputtering.…”

Through-Silicon via Device Non-Destructive Defect Evaluation Using Ultra-High-Resolution Acoustic Microscopy System

“…Thus, a technique that can precisely evaluate the surface, surface layer, and interface characteristics is required. The nondestructive evaluation (NDE) that utilizes ultrasonic waves is the only technique that can evaluate the surface and interface characteristics of thin film structures [ 7 , 8 , 9 , 10 , 11 , 12 ]. With the increased applications of acoustic microscopy, it was not difficult to inspect the inside of the past semiconductors using 15–100 MHz ultrasonic waves because their total thickness exceeded 3 mm and the thickness of the silicon die inside them was more than 1 mm [ 13 , 14 ].…”