Characteristics of two-stacked intrinsic Josephson junctions with a submicron loop on a Bi2Sr2CaCu2O8+δ (Bi-2212) single crystal whisker

Kim, S.-J.; Hatano, Takeshi; Kim, G.-S.; Kim, H.-Y.; Nagao, Masanori; Inomata, K.; Yun, Kyusik; Takano, Yoshihiko; Arisawa, Shunichi; Ishii, Akira; Takahashi, Saburo; Chen, J.; Nakajima, Koji; Yamashita, Tsutomu

doi:10.1016/j.physc.2004.01.162

Cited by 21 publications

(16 citation statements)

References 15 publications

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“…4.11 . The Fraunhofer pattern is obtained and the value [ 2 ] of modulation periods about 2000 Gauss which is consistent to the number of junctions in the stack and the value of periods is given as B tW    / , where   is the quantum fl ux, t is the interlayer distance, and W is the junction width [ 28 ]. The height of I c modulation decreases with increase in magnetic fi eld.…”

Section: Two-stacked Josephson Junctionssupporting

confidence: 53%

Three-Dimensional Nano-Machining in High-T c Oxide Superconductor Whiskers and Thin Films

Saini

Kim

2015

Oxide Thin Films, Multilayers, and Nanocomposites

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Three-dimensional nano/micro-machining (3D machining) is a versatile technique to fabricate devices in scale to quantum level. Three-dimensional focused ion beam (3D-FIB) etching technique is one of the most promising mask-less 3D-machining techniques which give freedom of milling through whisker or thin fi lms and help to fabricate tunnel junction devices. In this chapter, the base materials of these devices are high-T c superconductor whiskers and thin fi lms. Particularly, this chapter explains the fabrication process of Josephson junction stack devices of high-T c superconductor Bi 2 Sr 2 CaCu 2 O 8+ δ single-crystal whiskers and multilayered YBa 2 Cu 3 O 7 /PrBa 2 Cu 3 O 7 thin fi lms. With 3D-FIB etching technique, it is possible to mill down to nano-and submicron scale. The smallest in-plane area of about 0.16 μm 2 is discussed in this chapter. IntroductionThe nano/micro-machining is a useful technique to fabricate nano/submicrondimensional patterns and devices for various applications. The nano/micromachining technique can be classifi ed as (1) bulk nano/micro-machining: which is about the fabrication process in the material or substrates; (2) surface nano/micromachining technique: which deals with the pattering on top of the material or simply saying on surface; however both classifi cations are important to fabricate a device. It is not possible to achieve nano/submicron-dimensional patterns by conventional lithography technique. Even the e-beam lithography techniques have limitation and the limitations do not allow to fabricate the vertical patterned stack

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Section: Two-stacked Josephson Junctionssupporting

confidence: 53%

Three-Dimensional Nano-Machining in High-T c Oxide Superconductor Whiskers and Thin Films

Saini

Kim

2015

Oxide Thin Films, Multilayers, and Nanocomposites

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“…As a complementary approach, the use of the FIB etching technique has been proposed to fabricate the desired sample shape and size, especially starting from whisker crystals. Specialized machining techniques have been developed for this purpose [11,12], but it is also expected that FIB energetic ions introduce side-effects such as structural damage and ion implantation that have to be carefully considered and tested [13] before coming to the application stage. Therefore, the nature and the extent of the crystal modifications induced in the material characteristics by the FIB etching is an important issue which is worth further investigating.…”

Section: Introductionmentioning

confidence: 99%

Size-dependent resistivity in a micro-processed YBa₂Cu₃O_7−δsuperconducting whisker

Pierre

Cagliero

Agostino

et al. 2009

Supercond. Sci. Technol.

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We report the results of a detailed geometrical and electrical study which has been performed on a YBa 2 Cu 3 O 7−δ superconducting whisker. This sample has undergone three subsequent steps of micro-machining by means of a FIB instrument, in order to progressively decrease its cross-section area from ∼ 77 µm 2 to ∼ 4 µm 2 , over a length of about 150 µm. A simple analytical model based on the exact shape both of the electrical contacts and of the micro-machined material has been proposed for the voltage drop; besides, an accurate geometrical characterization of all of the sample details has been performed by means of SEM microscopy. This enabled us to extract accurate electrical resistivity curves from the resistance versus temperature characteristics for each of the fabrication steps of the whisker, showing an increase of the sheet resistivity with decreasing the cross-section area. Among the possible physical reasons for such behaviour, the inelastic electron scattering at the sample surfaces has been ruled out because of the very short mean free path of carriers in YBCO. On the other hand, oxygen out-diffusion and Ga ion implantation due to the FIB processing are most likely responsible for the observed resistivity trend.

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“…9 The smallest ion beam spot size is approximately 5-10 nm, which enables correspondingly small features to be patterned. The shape of an FIB cut is dependent on many factors, such as its geometry, milled depth, ion beam profile, and the redeposition of sputtered material.…”

Section: Fib Micro-and Nanomillingmentioning

confidence: 99%

Focused Ion Beam Micro- and Nanoengineering

Langford¹,

Nellen²,

Giérak³

et al. 2007

MRS Bull.

104

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This article is divided into four sections. The first section discusses FIB micro-and nanomilling and covers aspects such as pattern densities and milling threedimensional (3D) shapes. The second section covers FIB lithography, that is, Ga implantation or milling followed by a pattern transfer or growth step. The third section discusses FIB implantation for patterning and device fabrication. The fourth section highlights other fabrication techniques such as in situ micromanipulation. The article concludes with a discussion of possible future developments for enhancing the nanofabrication capabilities of FIB systems. FIB Micro-and NanomillingFIB milling, whether for sample preparation for electron microscopy or direct maskless patterning, is the most commonly used application of the systems and has been used to prepare a range of devices including lenses on the ends of fibers, 6 pseudo spin valves, 7 pillar microcavities, 8 and stacked Josephson junctions. 9 The smallest ion beam spot size is approximately 5-10 nm, which enables correspondingly small features to be patterned. The shape of an FIB cut is dependent on many factors, such as its geometry, milled depth, ion beam profile, and the redeposition of sputtered material. (Other factors, such as self-focusing, are discussed in the section "Micromachining 3D Structures with Complicated Shapes"). The combination of ion beam profile effects and sputter yield changes with the FIB angle of incidence causes rounding of the top edges of an FIB cut and the sidewalls to be inclined a few degrees from the perpendicular (the exact angles depend on the ion beam profile and milled depth). Redeposition may also cause the sidewalls to incline.As the milling depth increases, the probability of the sputtered material redepositing onto the sidewalls increases. If a line or hole is milled 10 to 15 times deeper than its width, redeposition results in V-shaped cross sections. The aspect ratio (depth to width) can be improved by using gas-enhanced etching (see the article by MoberlyChan et al. in this issue). Because the shape of a cut is dependent on the milled depth, the milling is referred to as 2D patterning if the sputtered depth is <100 nm, and 3D micromachining if the sputtered depth is >100 nm. FIB 2D PatterningFIB 2D patterning is used to pattern a diverse range of materials into dots, lines, and arrays. The 2D pattern densities MRS BULLETIN • VOLUME 32 • MAY 2007 • www/mrs.org/bulletin 417 AbstractThis article discusses applications of focused ion beam micro-and nanofabrication. Emphasis is placed on illustrating the versatility of focused ion beam and dual-platform systems and how they complement conventional processing techniques. The article is divided into four parts: maskless milling, ion beam lithography, ion implantation, and techniques such as in situ micromanipulation.

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Characteristics of two-stacked intrinsic Josephson junctions with a submicron loop on a Bi2Sr2CaCu2O8+δ (Bi-2212) single crystal whisker

Cited by 21 publications

References 15 publications

Three-Dimensional Nano-Machining in High-T c Oxide Superconductor Whiskers and Thin Films

Three-Dimensional Nano-Machining in High-T c Oxide Superconductor Whiskers and Thin Films

Size-dependent resistivity in a micro-processed YBa₂Cu₃O_7−δsuperconducting whisker

Focused Ion Beam Micro- and Nanoengineering

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Characteristics of two-stacked intrinsic Josephson junctions with a submicron loop on a Bi2Sr2CaCu2O8+δ (Bi-2212) single crystal whisker

Cited by 21 publications

References 15 publications

Three-Dimensional Nano-Machining in High-T c Oxide Superconductor Whiskers and Thin Films

Three-Dimensional Nano-Machining in High-T c Oxide Superconductor Whiskers and Thin Films

Size-dependent resistivity in a micro-processed YBa2Cu3O7−δsuperconducting whisker

Focused Ion Beam Micro- and Nanoengineering

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Size-dependent resistivity in a micro-processed YBa₂Cu₃O_7−δsuperconducting whisker