IEEE Trans. Electron Devices
 1966
DOI: 10.1109/t-ed.1966.15670
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Characteristics of varactors biased into avalanche

V.J. Higgins1,
F.A. Brand2,
Joseph J. Baranowski3
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Cited by 7 publications
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HIGH-POWER AND HIGH-EFFICIENCY GaAs AVALANCHE DIODES

Kim
1
,
Armstrong
2
1969
Applied Physics Letters
10
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HIGH-POWER AND HIGH-EFFICIENCY GaAs AVALANCHE DIODES

Kim
1
,
Armstrong
2
1969
Applied Physics Letters
10
0
0
0
View full textAdd to dashboardCite
show abstract

GaAs avalanche microwave oscillator with 1-watt power output

Liu
1
1967
Proc. IEEE
5
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0
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Silicon etch-refill p+-p-n+ epitaxial X-band IMPATT device

Glendinning
1
,
Mark2,
Harmatz3
1970
Proc. IEEE
1
0
1
0
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