2007
DOI: 10.1002/pssc.200777240
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Characteristics of W‐C‐N thin films on Si as a role of diffusion barrier for La0.67Sr0.33MnO3 manganese oxide layer

Abstract: PACS 66.30. Fq, 68.35.Fx, 75.20.En, 75.70.Cn, 81.15.Cd W-C-N ternary thin films are suggested as a diffusion barrier to prevent the interdiffusion between La 0.67 Sr 0.33 MnO 3 (La-Sr-MnO) and Si substrate for adapting the Si process. La-Sr-MnO layers have grown on W-C-N/Si thin film by sol-gel spinning processes and the thermal stabilities of W-C-N thin films with various nitrogen concentrations are studied during the annealing process up to 1000 °C. Experimental results show that the grain size of La-Sr-MnO … Show more

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“…This analysis is somewhat consistent with WCN formation using a much lower N 2 partial pressure during sputtering. 57 From the fitting of the high resolution XPS spectra (not shown), the C1s have three possible states at 284.9 eV, 283.6 eV, and 282.3 eV. The state at 284.9 eV is consistent with sp 2 -bonded C within the film.…”
Section: Resultsmentioning
confidence: 89%
“…This analysis is somewhat consistent with WCN formation using a much lower N 2 partial pressure during sputtering. 57 From the fitting of the high resolution XPS spectra (not shown), the C1s have three possible states at 284.9 eV, 283.6 eV, and 282.3 eV. The state at 284.9 eV is consistent with sp 2 -bonded C within the film.…”
Section: Resultsmentioning
confidence: 89%