Characteristics of ZrO2 Thin Films Deposited by Reactive Magnetron Sputtering

Ko, Jae Hwan; Kim, Soo Ho; Jee, Seung Hyun; Yoon, Young Soo; Kim, Dong-Joo

doi:10.3938/jkps.50.1843

Cited by 9 publications

(2 citation statements)

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“…Recently, Zirconium oxide (Zirconia, ZrO 2 ) thin films, which are one of the important materials in terms of electrical, optical, and mechanical properties, are getting more and more attention due to their superior properties such as high melting temperature 2680 °C [1], high resistance to oxidation [2], low thermal conductance at room temperature [3] ð4:2 Wm À1 K À1 at room temperature), and high refractive index [4][5][6]. ZrO 2 is preferred in many important applications such as oxygen gas sensors [7], compact disc (CD) read-heads [8], as a component of solid oxide fuel cells [9], biological ceramics [10], and memory devices [11] due to its excellent properties.…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence and structural properties of zirconium dioxide thin films produced by RF sputtering technique

Bakacak

Gür

Bayram

et al. 2021

J Mater Sci: Mater Electron

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In this study, Zirconium Oxide (ZrO 2 ) thin films were produced by using radio frequency magnetron sputtering method on glass substrate at various pressures. The effects of growth pressure on the characteristics of grown Zirconia nanostructures were investigated by Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM), X-Ray Diffraction (XRD), Uv-Visible Spectroscopy and Photoluminescence Spectrometry (PL). XRD analysis showed that peaks of the monoclinic and tetragonal phases were more effective at low growth pressure, but different monoclinic phase peaks were present at increasing growth pressures. The surface morphological properties of the films such as average and maximum roughness, changed significantly with increasing growth pressure, and the maximum peak height first increased to 40 nm and then decreased to 20 nm. The optical transmittance of these thin films was examined in the 450-1100 nm wavelength range, covering both the visible and near-infrared spectral range, and it was found to be approximately 95% at 550 nm wavelength, and the optical band gaps were calculated to be approximately 3.26 eV by PL analyses. Uv-Visible spectroscopy analysis showed that the refractive index of the Zirconia films decreases from 2.09 to 1.79 with increasing wavelength of the incident photon. ZrO 2 thin films are considered potential materials for transparent electronic devices because of their high transmittance value.

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Section: Introductionmentioning

confidence: 99%

Photoluminescence and structural properties of zirconium dioxide thin films produced by RF sputtering technique

Bakacak

Gür

Bayram

et al. 2021

J Mater Sci: Mater Electron

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“…Zirconium dioxide (ZrO 2 ) with high thermal stability and wide bandgap has been reported to be suitable for high power MOSFET applications [1][2][3]. In this paper, we have fabricated Al/ZrO 2 /4H-SiC MOS-Capacitors to investigate MOS interface characteristics between ZrO 2 and C-face 4H-SiC, where ZrO 2 film was deposited by an RF sputter [4][5][6].…”

Section: Introductionmentioning

confidence: 99%

Analysis of C-Face 4H-SiC MOS Capacitors with ZrO<sub>2</sub> Gate Dielectric

Chan

Chang

Lee

2014

MSF

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ZrO2 films were deposited on C-face 4H-SiC substrates by using an RF sputter at a temperature of 200°C. Then, ZrO2 films were treated with RTA (rapid thermal annealing) process in Argon (Ar) ambient at 600°C, 700°C and 800°C for 4 minutes, respectively. The samples with RTA process show the lower leakage currents. As the measure temperature increases from room temperature (RT) to 150°C, the dielectric breakdown voltage reduces from 3 V to 1 V. The difference between quasi C-V characteristics and high frequency C-V characteristics at 1 MHz becomes larger with increasing RTA temperature. The C-V curves also shift to the left side as the measure temperature increases from RT to 150°C. It also shows the ledge on the C-V curves of samples with RTA at elevated measure temperature.

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