Characterization and analysis of electrical trap related effects on the reliability of AlGaN/GaN HEMTs

Annihilation of electrical trap effects by irradiating AlGaN/GaN HEMTs with low thermal neutrons radiation fluence

“…However, we have highlighted the creation of electrical traps during electrical stresses in a previous paper [14]. No illumination effect on dc electrical characteristics of the unstressed devices has been shown.…”

“…After the ageing test, the devices have recovered their electrical performances under illumination and we can announce that I DS max is slightly superior to its initial value [14]. So, the decrease of DI DS max and the increase of DR ON after the ageing tests (Fig.…”

“…On the other hand, an illumination effect has been observed before the neutron irradiation [14]. In these conditions, we can suppose that low thermalized neutrons radiation fluencies reduce the electrical trap effects induced by an OFF-state stress when the devices are measured in static regim.…”

“…2b shows that DI DS max stays close to 0% when the ageing time increases to 27 h, and decreases down to À35% when the ageing time varies from 27 up to 75 h and stays quasi-constant after 75 h. At the same time, DR ON rises from 0 up to 200% after an ageing test of 75 h and then DR ON stays also quasi-constant. Moreover, the Schottky contact was not damaged by an OFF-state stress of 98 h [14].…”

“…Moreover, the sensitivity of the devices to white light illumination after the electrical test implies the creation of donor traps. The location of these electrical traps was reported in [14].…”